| Patent application number | Description | Published |
|---|
| 20090298252 | FIELD-ENHANCED PROGRAMMABLE RESISTANCE MEMORY CELL - A method for fabricating a field-enhanced programmable resistance memory cell. In an example embodiment, a resistor includes a resistance structure between a first electrode and a second electrode. The resistance structure includes an insulating dielectric material. The second electrode includes a protrusion extending into the resistance structure. The insulating dielectric material includes a material in which a confined conductive region with a programmable resistance is formable via a conditioning signal. | 12-03-2009 |
| 20090305487 | NON-VOLATILE RESISTANCE SWITCHING MEMORY - A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C. | 12-10-2009 |
| 20090308313 | NON-VOLATILE RESISTANCE SWITCHING MEMORY - A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C. | 12-17-2009 |
| 20100299297 | SYSTEM FOR ELECTRONIC LEARNING SYNAPSE WITH SPIKE-TIMING DEPENDENT PLASTICITY USING PHASE CHANGE MEMORY - A system, method and computer program product for producing spike-dependent plasticity in an artificial synapse is disclosed. According to one embodiment, a method for producing spike-dependent plasticity in an artificial neuron comprises generating a pre-synaptic spiking event in a first neuron when a total integrated input to the first neuron exceeds a first predetermined threshold. A post-synaptic spiking event is generated in a second neuron when a total integrated input to the second neuron exceeds a second predetermined threshold. After the pre-synaptic spiking event, a first pulse is applied to a pre-synaptic node of a synapse having a phase change memory element. After the post-synaptic spiking event, a second varying pulse is applied to a post-synaptic node of the synapse, wherein current through the synapse is a function of the state of the second varying pulse at the time of the first pulse. | 11-25-2010 |
| 20110024712 | PCM With Poly-Emitter BJT Access Devices - A phase change memory (PCM) includes an array comprising a plurality of memory cells, a memory cell comprising a phase change element (PCE); and a PCE access device comprising a bipolar junction transistor (BJT), the BJT comprising an emitter region comprising a polycrystalline semiconductor. A memory cell for a phase change memory (PCM) includes a phase change element (PCE); and a PCE access device comprising a bipolar junction transistor (BJT), the BJT comprising an emitter region comprising a polycrystalline semiconductor. | 02-03-2011 |
| 20110108792 | Single Crystal Phase Change Material - A method for fabricating a phase change memory (PCM) cell includes forming a dielectric layer over an electrode, the electrode comprising an electrode material; forming a via hole in the dielectric layer such that the via hole extends down to the electrode; and growing a single crystal of a phase change material on the electrode in the via hole. A phase change memory (PCM) cell includes an electrode comprising an electrode material; a dielectric layer over the electrode; a via hole in the dielectric layer; and a single crystal of a phase change material located in the via hole, the single crystal contacting the electrode at the bottom of the via hole. | 05-12-2011 |
| 20110119214 | AREA EFFICIENT NEUROMORPHIC CIRCUITS - A neuromorphic circuit includes a first field effect transistor in a first diode configuration establishing an electrical connection between a first gate and a first drain of the first field effect transistor. The neuromorphic circuit also includes a second field effect transistor in a second diode configuration establishing an electrical connection between a second gate and a second drain of the second field effect transistor. The neuromorphic circuit further includes variable resistance material electrically connected to both the first drain and the second drain, where the variable resistance material provides a programmable resistance value. The neuromorphic circuit additionally includes a first junction electrically connected to the variable resistance material and providing a first connection point to an output of a neuron circuit, and a second junction electrically connected to the variable resistance material and providing a second connection point to the output of the neuron circuit. | 05-19-2011 |
| 20110121251 | SINGLE MASK ADDER PHASE CHANGE MEMORY ELEMENT - A method of fabricating a phase change memory element within a semiconductor structure and a semiconductor structure having the same that includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region formed within a dielectric layer at a same layer within the semiconductor structure, depositing a conformal film within the opening and recessing the conformal film to expose the upper surface of the bottom electrode, depositing phase change material within the opening, recessing the phase change material within the opening, and forming a top electrode on the recessed phase change material. | 05-26-2011 |
| 20110121252 | SINGLE MASK ADDER PHASE CHANGE MEMORY ELEMENT - A method of fabricating a phase change memory element within a semiconductor structure and a semiconductor structure having the same that includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region formed within a dielectric layer at a same layer within the semiconductor structure, depositing a conformal film within the opening and recessing the conformal film to expose the upper surface of the bottom electrode, depositing phase change material within the opening, recessing the phase change material within the opening, and forming a top electrode on the recessed phase change material. | 05-26-2011 |
