Patent application number | Description | Published |
20090201068 | Output circuit with overshoot-reducing function - Output circuit with reduced overshoot includes input end, output end, a circuit composed of PMOS and NMOS, rising and falling edge trigger bias circuits. The rising and falling edge trigger bias circuits output biasing voltages to the output end for clamping the voltage of the output signals respectively according to the rising edge and the falling edge of the input signal. In this way, the overshoot of the output signal is reduced. | 08-13-2009 |
20090261877 | Duty cycle correction circuit with wide-frequency working range - A duty cycle correction circuit with wide-frequency working range utilizes a pulse generator having adjustable pulse width function to adjust the width of the pulse and outputs a clock signal with the duty cycle of 50%. The pulse generator includes a NAND gate, a modulation device, and an inverter. The inverter is coupled between the second input end of the NAND gate and the modulation device. The modulation device modulates the low-level status of the input clock signal and accordingly outputs to the inverter. The first input end of the NAND gate receives the input clock signal. The NAND gate operates NAND calculation to the signals received on the input ends of the NAND gate and accordingly outputs a periodic low-level pulse signal. | 10-22-2009 |
20100019819 | Delay Circuit - Constant delay circuit includes signal input end, delay signal output end, RC delay circuit, and a comparator. The signal input end receives an input signal. The delay signal output end outputs the delay input signal, which the delay period is predetermined. The RC delay circuit is coupled to the signal input end for receiving the input signal and generating a voltage. The comparator includes a first input end, a second input end, and an output end. The first end of the comparator is coupled to the RC delay circuit for receiving the voltage. The second end of the comparator receives a reference voltage. The output end of the comparator is coupled to the delay signal output end of the long delay circuit. The comparator compares the reference voltage and the voltage, and accordingly generates a result as the delay signal. | 01-28-2010 |
20100033217 | Delayed-Locked Loop with power-saving function - A DLL with power-saving function includes a VCDL, a voltage control module, a capacitor, and a phase detector. The VCDL generates a delayed clock signal according to the voltage on the capacitor and a reference clock signal. The phase detector detects phase difference between the delayed clock signal and the reference clock signal and accordingly controls the voltage controller. The voltage controller sinks or sources current to the capacitor for adjusting the voltage on the capacitor. Further, the voltage controller can turn off its charge pump according to a turned-off signal and stops sinking or sourcing current for saving power. | 02-11-2010 |
20100052646 | CURRENT MIRROR WITH IMMUNITY FOR THE VARIATION OF THRESHOLD VOLTAGE AND THE GENERATION METHOD THEREOF - A current mirror with immunity for the variation of threshold voltage includes raising the voltage difference between the gate and the source of a MOS in the current source, and increasing the channel length of the MOS for limiting the generated reference current. | 03-04-2010 |
20100073062 | Voltage Control Oscillator Without Being Affected by Variations of Process and Bias Source - A VCO includes a reference current module and a clock signal generating module. The reference current module generates a reference current according to a reference voltage. The clock signal generating module generates a clock signal according to the reference current. The reference current module utilizes the negative feed-back mechanism to keep the generated reference current at the predetermined size without being changed with the variation of the process and the bias source. | 03-25-2010 |
20100103753 | DATA DETECTING APPARATUS AND METHODS THEREOF - A data detecting apparatus and a data detecting method are disclosed in the embodiments of the present invention. The data detecting apparatus operates according to a clock signal with a predetermined period. The data detecting apparatus comprises a plurality of memory cells, a plurality of data lines, a plurality of bit lines, a plurality of sense amplifiers and a pre-charge control circuit. | 04-29-2010 |
20100207676 | SIGNAL CONVERTING DEVICE - The invention discloses a signal converting device, and more particularly, to a signal converting device that improves the signal quality. The signal converting device comprises a first input end, a second input end, an output end, a first circuit and a second circuit. The first circuit is coupled between the first input end and the output end. The first circuit determines whether to charge up the output end to generate an output signal or not according to a first differential input signal. The second circuit is coupled between the second input end and the output end. The second circuit determines whether to discharge the output end to generate the output signal or not according to a second differential input signal. | 08-19-2010 |
20110032007 | Buffer-driving circuit capable of increasing responding speed and prolonging lifespan, buffer, and method thereof - A method for increasing responding speed and lifespan of a buffer includes detecting an edge of an input signal of the buffer, triggering a pulse signal with a predetermined period according to the detected edge, and driving the buffer for generating an output signal according to the pulse signal and the input signal. | 02-10-2011 |
20110032781 | MEMORY DEVICE AND MEMORY CONTROL METHOD - The embodiments of the present invention disclose a memory device having a fast and shared redundancy decision scheme and a memory control method. The memory device includes an address receiver, a command receiver, a command controller, a row address generator, a column address generator and a shared redundancy decision circuit. | 02-10-2011 |
20110037503 | Buffer-driving circuit capable of increasing responding speed and prolonging lifespan, buffer, and method thereof - A method for increasing responding speed and lifespan of a buffer includes detecting an edge of an input signal of the buffer, triggering a pulse signal with a predetermined period according to the detected edge, and driving the buffer for generating an output signal according to the pulse signal and the input signal. | 02-17-2011 |
20120056652 | DLL circuit with dynamic phase-chasing function and method thereof - A method of dynamically adjusting phase-chasing speed for increasing efficiency of a DLL circuit includes detecting an overall loop delay for an input clock signal in the DLL circuit, obtaining an optimal divisor according to the overall loop delay, and in the phase-locking period of the DLL circuit, dividing the frequencies of the input clock signal and a feedback clock signal corresponding to the input clock signal according to the optimal divisor. | 03-08-2012 |
20120169371 | INPUT BUFFER SYSTEM WITH A DUAL-INPUT BUFFER SWITCHING FUNCTION AND METHOD THEREOF - An input buffer system with a dual-input buffer switching function includes a first input buffer, a second input buffer, and a multiplexer. The first input buffer is used for outputting a first signal when an input signal is at a logic-high voltage, and the first input buffer is turned off when the input signal is at a logic-low voltage. The second input buffer is used for outputting a second signal when the input signal is at the logic-low voltage. The multiplexer is coupled to the first input buffer and the second input buffer for outputting the first signal or the second signal according to a self refresh signal. | 07-05-2012 |
20120229174 | OUTPUT STAGE CIRCUIT FOR OUTPUTTING A DRIVING CURRENT VARYING WITH A PROCESS - An output stage circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, an N-type metal-oxide-semiconductor transistor, and a current source. A voltage of a third terminal of the first P-type metal-oxide-semiconductor transistor is a first voltage minus a voltage drop between a first terminal and a second terminal of the first P-type metal-oxide-semiconductor transistor. The N-type metal-oxide-semiconductor transistor is coupled between the third terminal of the first P-type metal-oxide-semiconductor transistor and the current source. A second terminal of the second P-type metal-oxide-semiconductor transistor is coupled to the third terminal of the first P-type metal-oxide-semiconductor transistor. When a second terminal of the N-type metal-oxide-semiconductor transistor receives a kick signal, a driving current flowing through the second P-type metal-oxide-semiconductor transistor is relevant to the voltage of the third terminal of the first P-type metal-oxide-semiconductor transistor. | 09-13-2012 |
20120230124 | LATCH SYSTEM APPLIED TO A PLURALITY OF BANKS OF A MEMORY CIRCUIT - A latch system applied to a plurality of banks of a memory circuit includes a front latch circuit and a plurality of rear latch circuit. The front latch circuit is used for receiving a datum and a front latch enabling signal, and generating and outputting an intermediate signal according to the datum and the front latch enabling signal. Each rear latch circuit of the plurality of rear latch circuits is coupled to an output terminal of the front latch circuit for receiving the intermediate signal, and generating and outputting a rear latch datum to a corresponding bank of the plurality of banks according to the intermediate signal and a corresponding rear latch enabling signal, where only one rear latch enabling signal is enabled at any time. | 09-13-2012 |
20120256666 | DELAY LOCK LOOP SYSTEM WITH A SELF-TRACKING FUNCTION AND METHOD THEREOF - A delay lock loop system includes a timing controller, an OR gate, an input buffer, a pulse generator, and a delay lock loop. The timing controller is used for outputting an external enable signal periodically while a power saving signal is at a logic-low voltage, and being disabled according to a logic-high voltage of the power saving signal. The pulse generator is used for generating a pulse according to the positive edge of the power saving signal. The OR gate is coupled to the timing controller for receiving the power saving signal, the pulse, and the external enable signal, and outputting an enable signal according to the power saving signal and the external enable signal. The delay lock loop is coupled to the OR gate and the input buffer for enabling the delay lock loop again according to the enable signal. | 10-11-2012 |
20130033250 | POWER-UP INITIAL CIRCUIT - A power-up initial circuit includes a power-up control unit, a first switch and a second switch. The power-up control unit is used for receiving a high voltage start-up signal, and generating a first power-up control signal. The first switch has a first terminal for receiving an external voltage, a second terminal for coupling to the power-up control circuit for receiving the first power-up control signal, and a third terminal. The second switch has a first terminal coupled to the third terminal of the first switch, a second terminal for coupling to the power-up control circuit for receiving the first power-up control signal, and a third terminal for coupling to a high voltage generator. | 02-07-2013 |
20130248860 | BUNDLED MEMORY AND MANUFACTURE METHOD FOR A BUNDLED MEMORY WITH AN EXTERNAL INPUT/OUTPUT BUS - A bundled memory includes a substrate, a first memory die, a second memory die, a scribe line, and an electrical connection. The first memory die has a first input/output bus, and the second memory die has a second input/output bus, where the first memory die and the second memory die are formed over the substrate. The scribe line is formed between the first memory die and the second memory die. The electrical connection is formed over the scribe line for electrically connecting to the first input/output bus and the second input/output bus, where the electrical connection is electrically connected to an external input/output bus, where a size of the external input/output bus of the bundled memory is larger than or equal to a size of the first input/output bus and a size of the second input/output bus. | 09-26-2013 |
20130250711 | MEMORY AND METHOD OF REFRESHING A MEMORY - A memory includes a determination circuit, a plurality of refresh counters, and a plurality of banks. The determination circuit receives a refresh command. The plurality of refresh counters are coupled to the determination circuit. Each refresh counter of the plurality of refresh counters corresponds to one bank of the plurality of banks. The determination circuit detects whether a first bank of the plurality of banks is enabled or a number counted by a first refresh counter of the plurality of refresh counters corresponding to the first bank is equal to a predetermined value. Then, the determination circuit optionally refreshes one bank of the plurality of banks according to a detection result. Thus, the memory still refreshes an idle bank according to a refresh command even if the plurality of banks are not all idle. | 09-26-2013 |
20130293260 | METHOD OF SHARING IN USE AN IMPEDANCE MATCHING CIRCUIT OF A MEMORY CIRCUIT TO PERFORM AN INITIAL CALIBRATION AND A FULL TIME REFRESH MODE CALIBRATION, AND MEMORY CIRCUIT WITH AN IMPEDANCE MATCHING CIRCUIT CAPABLE OF BEING USED IN AN INITIAL CALIBRATION AND A FULL TIME REFRESH MODE CALIBRATION - A method of sharing in use an impedance matching circuit of a memory circuit to perform an initial calibration and a full time refresh mode calibration includes supplying power to the memory circuit, utilizing the impedance matching circuit to perform the initial calibration on the memory circuit, the memory circuit exiting the initial calibration, the memory circuit entering a driving mode, the memory circuit exiting the driving mode every a predetermined interval, utilizing the impedance matching circuit to perform the full time refresh mode calibration on the memory circuit according to a refresh command, an output voltage detection circuit determining a level of an output voltage of the memory circuit, and performing a corresponding operation according to a determination result generated by the output voltage detection circuit. | 11-07-2013 |
20130300474 | DELAY-LOCKED LOOP AND METHOD FOR A DELAY-LOCKED LOOP GENERATING AN APPLICATION CLOCK - A delay-locked loop includes a first delay unit, a second delay unit, a third delay unit, a phase detector, and a controller. The first delay unit generates a first delay clock according to a clock and a first delay time. The second delay unit generates a second delay clock according to the first delay clock and a second delay time. The third delay unit generates a third delay clock according to the second delay clock and a third delay time. The phase detector generates a phase detection signal according to the clock and the second delay clock. The controller generates and outputs a phase control signal according to the phase detection signal. The second delay unit and the third delay unit adjust the second delay time and the third delay time respectively according to the phase control signal. | 11-14-2013 |
20140050038 | MEMORY DEVICE WITH BI-DIRECTIONAL TRACKING OF TIMING CONSTRAINTS - A memory device includes a DRAM, a first bi-directional tracking circuit and a second bi-directional tracking circuit. The DRAM includes a cell, a word line and a bit line. The first bi-directional tracking circuit is configured to track a first timing constraint associated with turning on or turning off the word line. The second bi-directional tracking circuit is configured to track a second timing constraint associated with turning on the bit line, turning off the bit line, or accessing the cell via the bit line. | 02-20-2014 |
20140308809 | BUNDLED MEMORY AND MANUFACTURE METHOD FOR A BUNDLED MEMORY WITH AN EXTERNAL INPUT/OUTPUT BUS - A bundled memory includes a substrate, a first memory die, a second memory die, a scribe line, and an electrical connection. The first memory die has a first input/output bus, and the second memory die has a second input/output bus, where the first memory die and the second memory die are formed over the substrate. The scribe line is formed between the first memory die and the second memory die. The electrical connection is formed over the scribe line for electrically connecting to the first input/output bus and the second input/output bus, where the electrical connection is electrically connected to an external input/output bus, where a size of the external input/output bus of the bundled memory is larger than or equal to a size of the first input/output bus and a size of the second input/output bus. | 10-16-2014 |
20140362656 | MEMORY WITH LOW CURRENT CONSUMPTION AND METHOD FOR REDUCING CURRENT CONSUMPTION OF A MEMORY - A method for reducing current consumption of a memory is disclosed, wherein the memory includes a controller and a plurality of banks, and each bank of the plurality of banks includes a plurality of segments. The method includes the controller enabling an activating command corresponding to a first row address and an address of a first bank of the plurality of banks; a word line switch of a segment of the first bank corresponding to the first row address being turned on according to the activating command; the controller enabling an access command corresponding to an address of the segment; a plurality of bit switches corresponding to the segment being turned on according to the access command; and the controller enabling a pre-charge command corresponding to an address of a following segment and the address of the first bank after the access command is disabled. | 12-11-2014 |