| Patent application number | Description | Published |
|---|
| 20080211533 | IMPEDANCE MATCHING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME - An impedance matching circuit includes a code generating unit for generating a calibration code in response to a reference voltage and a voltage on a node, a calibration resistance unit for supplying a power supply voltage to the node, being calibrated to an external resistor, wherein the calibration resistance unit includes a switching unit for turning on/off a plurality of resistors connected in parallel in response to the calibration code, a termination pull-up resistance unit provided at an output node for receiving the calibration code, wherein the termination pull-up resistance unit has a switching unit which is identical to that of the calibration resistance unit, and a termination pull-down resistance unit at the output node, for receiving the calibration code, wherein the termination pull-down resistance unit has a switching unit which is identical to that of the calibration resistance unit. | 09-04-2008 |
| 20080211534 | IMPEDANCE MATCHING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME - An impedance matching circuit of a semiconductor memory device performs a ZQ calibration with initial values that reflect an offset error according to variations in a manufacturing process. The impedance matching circuit includes a first pull-down resistance unit, a first pull-up resistance unit, and a code generation unit. The first pull-down resistance unit supplies a ground voltage to a first node, thereby determining an initial pull-down code. The first pull-up resistance unit supplies a supply voltage to the first node, thereby determining an initial pull-up code or a voltage level on the first node. The code generation unit generates pull-down and pull-up calibration codes using the initial pull-down and pull-up codes as respective initial values. | 09-04-2008 |
| 20090002018 | Impedance adjusting circuit and semiconductor memory device having the same - An impedance adjusting circuit includes: a first calibration resistor circuit configured to be calibrated with an external resistor and generate a first calibration code; a second calibration resistor circuit configured to be calibrated with the first calibration resistor circuit and generate a second calibration code, the second calibration resistor circuit being connected to a first node; and a transmission line circuit configured to be responsive to a control signal to connect the first node to a pin of a system employing the impedance adjusting circuit. | 01-01-2009 |
| 20090003117 | SEMICONDUCTOR MEMORY DEVICE - A circuit can control a bit rate of information output from a multi-purpose register (MPR) of a semiconductor memory device in a test mode, thereby reducing current consumption for outputting information in a multi-purpose register (MPR). The semiconductor memory device includes a multi-purpose register configured separately to store a plurality of information, and to control a bit rate of the stored information in a test mode, each of the information having multiple bits, and a connection selector configured selectively to connect an output terminal of the multi-purpose register to one of a number of global lines according to an operation mode. | 01-01-2009 |
| 20090059704 | CALIBRATION CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME - A calibration circuit is capable of correcting an error of a calibration operation by adjusting a calibration code generated thereby. The calibration circuit of a semiconductor memory device includes a code generator, a calibration resistor unit, and a variable resistor unit. The code generator is configured to generate a calibration code for determining a termination resistance in response to a voltage of a first node and a reference voltage. The calibration resistor unit, which has internal resistors turned on/off in response to the calibration code, is connected to the first node. The variable resistor unit is connected in parallel with the calibration resistor unit and has a resistance that varies with a setting value. | 03-05-2009 |
| 20090072882 | On die thermal sensor of semiconductor memory device and method thereof - An on die thermal sensor (ODTS) includes a thermal sensor for outputting a first comparing voltage by detecting a temperature of the semiconductor memory device; a comparing unit for outputting a trimming code by comparing the first comparing voltage with a second comparing voltage and increasing or decreasing a preset digital code in response to the comparing result; and a voltage level adjusting unit for adjusting a voltage level of the second comparing voltage by determining a maximum variation voltage and a minimum variation voltage based on the trimming code and a temperature control code. | 03-19-2009 |
| 20090273363 | OUTPUT DRIVER CIRCUIT, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE OUTPUT DRIVER CIRCUIT, AND METHOD FOR OPERATING THE SEMICONDUCTOR MEMORY DEVICE - Output driver circuit, semiconductor memory device including the output driver circuit, and method for operating the semiconductor memory device, including a pre-driver to generate a pull-up control signal and a pull-down control signal according to a logic value of data to output, and to adjust and output a slew rate of the pull-up control signal and a slew rate of the pull-down control signal according to a termination resistance setting information, a pull-up driver to output logic high data in response to the pull-up control signal and a pull-down driver to output logic low data in response to the pull-down control signal. | 11-05-2009 |
| 20090273364 | CALIBRATION CIRCUIT, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, AND OPERATING METHOD OF THE CALIBRATION CIRCUIT - Calibration circuit, semiconductor memory device including the same, and operation method of the calibration circuit includes a calibration unit configured to generate a calibration code for controlling a termination resistance value, a calibration control unit configured to count a clock and allow the calibration unit to be enabled during a predetermined clock and a clock control unit configured to selectively supply the clock to the calibration control unit according to an operation mode of a semiconductor device employing the calibration circuit. | 11-05-2009 |
| 20090274001 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME - Semiconductor memory device and method for operating the same includes a data output unit configured to output data in synchronization with a data output clock and a clock control unit configured to selectively transfer the data output clock to the data output unit under the control of a read command. | 11-05-2009 |
