Patent application number | Description | Published |
20090146191 | LOW LEAKAGE SCHOTTKY CONTACT DEVICES AND METHOD - Method and apparatus are described for semiconductor devices. The method ( | 06-11-2009 |
20100059860 | COUNTER-DOPED VARACTOR STRUCTURE AND METHOD - An improved varactor diode ( | 03-11-2010 |
20110156051 | SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTTKY CONTACTS - Embodiments include semiconductor devices with low leakage Schottky contacts. An embodiment is formed by providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the first mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced. | 06-30-2011 |
20140087550 | METHODS OF MAKING SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTKYCONTACTS - Embodiments include methods of making semiconductor devices with low leakage Schottky contacts. An embodiment includes providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced. | 03-27-2014 |
20140264449 | METHOD OF FORMING HEMT SEMICONDUCTOR DEVICES AND STRUCTURE THEREFOR - In one embodiment, a HEMT semiconductor device includes an isolation region that may include oxygen wherein the isolation region may extend thorough an ALGaN and GaN layer into an underlying layer. | 09-18-2014 |
20140264452 | METHOD OF FORMING A HEMT SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR - In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors. | 09-18-2014 |
20160043178 | SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE - In accordance with an embodiment, a method for manufacturing a semiconductor component includes providing a semiconductor material having a surface, forming an epitaxial layer of carbon doped semiconductor material on the semiconductor substrate, the epitaxial layer having a surface, forming a nucleation layer on the epitaxial layer; and forming a layer of III-nitride material on the nucleation layer. In accordance with another embodiment, the semiconductor component includes a silicon semiconductor substrate of a first conductivity type; a carbon doped epitaxial layer on the silicon semiconductor substrate; a buffer layer over the carbon doped buffer layer; and a channel layer on the buffer layer. | 02-11-2016 |
20160043181 | ELECTRONIC DEVICE INCLUDING A CHANNEL LAYER INCLUDING A COMPOUND SEMICONDUCTOR MATERIAL - An electronic device can transistor having a channel layer that includes a compound semiconductor material. In an embodiment, the channel layer overlies a semiconductor layer that includes a carrier barrier region and a carrier accumulation region. The charge barrier region can help to reduce the likelihood that de-trapped carriers from the channel layer will enter the charge barrier region, and the charge accumulation region can help to repel carriers in the channel layer away from the charge barrier layer. In another embodiment, a barrier layer overlies the channel layer. Embodiments described herein may help to produce lower dynamic on-resistance, lower leakage current, another beneficial effect, or any combination thereof. | 02-11-2016 |
20160043185 | SEMICONDUCTOR COMPONENT AND METHOD - In accordance with an embodiment, a method for manufacturing a semiconductor component includes providing a semiconductor material having a surface and forming a passivation layer on the semiconductor material Portions of the passivation layer are removed and portions of the semiconductor material exposed by removing the portions of the passivation layer are also removed. A layer of dielectric material is formed on the passivation layer and the exposed portions of the semiconductor material and first and second cavities are formed in the layer of dielectric material. The first cavity exposes a first portion of the semiconductor material and has at least one step shaped sidewall and the second cavity exposes a second portion of the semiconductor material. A first electrode is formed in the first cavity and a second electrode is formed in the second cavity. | 02-11-2016 |
20160043218 | SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE - In accordance with an embodiment, a method for manufacturing a semiconductor component includes forming a first trench through a plurality of layers of compound semiconductor material. An insulating material is formed on first and second sidewalls of the first trench and first and second sidewalls of the second trench and a trench fill material is formed in the first and second trenches. In accordance with another embodiment, the semiconductor component includes a plurality of layers of compound semiconductor material over a body of semiconductor material and first and second filled trenches extending into the plurality of layers of compound semiconductor material. The first trench has first and second sidewalls and a floor and a first dielectric liner over the first and second sidewalls and the second trench has first and second sidewalls and a floor and second dielectric liner over the first and second sidewalls of the second trench. | 02-11-2016 |
20160043219 | SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE - In accordance with an embodiment, a method for manufacturing a semiconductor component includes forming a first trench through a plurality of layers of compound semiconductor material. An insulating material is formed on first and second sidewalls of the first trench and first and second sidewalls of the second trench and a trench fill material is formed in the first and second trenches. In accordance with another embodiment, the semiconductor component includes a plurality of layers of compound semiconductor material over a body of semiconductor material and first and second filled trenches extending into the plurality of layers of compound semiconductor material. The first trench has first and second sidewalls and a floor and a first dielectric liner over the first and second sidewalls and the second trench has first and second sidewalls and a floor and second dielectric liner over the first and second sidewalls of the second trench. | 02-11-2016 |