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Chun-Kuang
Chun-Kuang Chen, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20110059407 | DOUBLE PATTERNING STRATEGY FOR FORMING FINE PATTERNS IN PHOTOLITHOGRAPHY - A method of lithography patterning includes forming a first resist pattern over a substrate, baking the first resist features, hardening the first resist features, forming a second resist layer within the hardened first resist features, and patterning the second resist layer to form at least one second resist feature between the hardened first features. | 03-10-2011 |
Chun-Kuang Chen, Hsin-Chu TW
| Patent application number | Description | Published |
|---|---|---|
| 20100297538 | Holographic Reticle and Patterning Method - A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures or else used in a multi-surface imaging composition. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device. | 11-25-2010 |
Chun-Kuang Chen, Hsin-Chu Hsien TW
| Patent application number | Description | Published |
|---|---|---|
| 20080248403 | METHOD AND SYSTEM FOR IMPROVING CRITICAL DIMENSION UNIFORMITY - A method for improving critical dimension uniformity of a wafer includes exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits conditions of focus and exposure dose for each of the first plurality of substrates to form a plurality of perturbed wafers; measuring a critical dimension of the plurality of mask patterns at each of the predetermined locations for each of the plurality of perturbed wafers; averaging the critical dimension measured at each of the predetermined locations over the plurality of perturbed wafers to form a perturbed critical dimension map; measuring a sidewall angle of the plurality of mask patterns; averaging the sidewall angle measured to form a perturbed sidewall angle map; and providing the perturbed critical dimension map and the perturbed sidewall angle map to an exposure tool. | 10-09-2008 |
| 20090142701 | DOUBLE PATTERNING STRATEGY FOR CONTACT HOLE AND TRENCH - A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including at least one opening therein on the substrate; curing the first resist pattern; forming a second resist pattern on the substrate; forming a material layer on the substrate; and removing the first and second resist patterns to expose the substrate. | 06-04-2009 |
| 20100201961 | System For Improving Critical Dimension Uniformity - A system for improving substrate critical dimension uniformity is described. The system includes an exposing means for exposing a plurality of mask patterns on a first plurality of substrates at predetermined locations with common splits of focus ({F | 08-12-2010 |
Chun-Kuang Lin, Hsinchu County TW
| Patent application number | Description | Published |
|---|---|---|
| 20090276750 | METHOD FOR ESTABLISHING SCATTERING BAR RULE - A method for establishing a scattering bar rule for a mask pattern for fabricating a device is provided. The method is described as follows. First, at least one image simulation model is established according to the mask pattern and a process reference set used for fabricating the device based on the mask pattern. Next, a plurality of scattering bar reference sets is applied to the image simulation model so as to generate a plurality of simulation images, respectively. Further, a portion of the simulation images are selected to be a plurality of candidate layouts according to a screening criterion. Next, one of the candidate layouts is determined to be a pattern layout according to a selection rule, and the scattering bar reference set corresponding to the pattern layout is determined to be a scattering bar rule of the mask pattern. | 11-05-2009 |