Patent application number | Description | Published |
20110084248 | CROSS POINT MEMORY ARRAY DEVICES - Cross point memory arrays with CBRAM and RRAM stacks are presented. A cross point memory array includes a first group of substantially parallel conductive lines and a second group of substantially parallel conductive lines, oriented substantially perpendicular to the first group of substantially parallel conductive lines. An array of memory stack is located at the intersections of the first group of substantially parallel conductive lines and the second group of substantially parallel conductive lines, wherein each memory stack comprises a conductive bridge memory element in series with a resistive-switching memory element. | 04-14-2011 |
20110241138 | MAGNETORESISTIVE RANDOM ACCESS MEMORY ELEMENT AND FABRICATION METHOD THEREOF - A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer. | 10-06-2011 |
20120001141 | RRAM structure and method of making the same - An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the oxygen ions or nitrogen ions are removed from the vacancies to lower the resistance of the resistive layer. | 01-05-2012 |
20120146168 | MAGNETORESISTIVE RANDOM ACCESS MEMORY ELEMENT AND FABRICATION METHOD THEREOF - A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer. | 06-14-2012 |
20130252348 | MAGNETORESISTIVE RANDOM ACCESS MEMORY ELEMENT AND FABRICATION METHOD THEREOF - A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer. | 09-26-2013 |
20140131835 | SEMICONDUCTOR DEVICE WITH RUTILE TITANIUM OXIDE DIELECTRIC FILM - A capacitor structure includes a first electrode on a substrate; a template layer on the first electrode; a titanium oxide (TiO2) dielectric layer on the template layer, wherein the TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the TiO2 dielectric layer. The titanium oxide dielectric layer is an undoped titanium oxide dielectric layer. | 05-15-2014 |
20140134821 | METHOD FOR FABRICATING CAPACITOR HAVING RUTILE TITANIUM OXIDE DIELECTRIC FILM - A method for fabricating a capacitor includes: (1) forming a bottom electrode on a substrate; (2) forming a template layer on the bottom electrode; (3) performing a plurality of atomic layer deposition (ALD) cycles by using water vapor as an oxidant thereby depositing a first TiO2 layer on the template layer; and (4) performing ozone pulse and purge step to transform entire thickness of the first TiO2 layer into rutile phase. | 05-15-2014 |
20140185182 | SEMICONDUCTOR DEVICE WITH RUTILE TITANIUM OXIDE DIELECTRIC FILM - A capacitor structure includes a first electrode on a substrate; a TiO2 dielectric layer directly on the first electrode, wherein the TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the TiO2 dielectric layer. Template layer, seed layer or pretreated layer is not required between the first electrode and the TiO2 dielectric layer. Besides, impurity doping is not required for the TiO2 dielectric layer. | 07-03-2014 |
20140315368 | PROCESS FOR FORMING A CAPACITOR STRUCTURE WITH RUTILE TITANIUM OXIDE DIELECTRIC FILM - A process of forming a capacitor structure includes providing a substrate. Next, a first electrode is deposited onto the substrate. Later, a water-based ALD process is performed to deposit a transitional amorphous TiO | 10-23-2014 |
20150044852 | METHOD OF FORMING RRAM STRUCTURE - An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the oxygen ions or nitrogen ions are removed from the vacancies to lower the resistance of the resistive layer. | 02-12-2015 |
20150064805 | METHOD FOR FABRICATING MAGNETORESISTIVE RANDOM ACCESS MEMORY ELEMENT - A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer. | 03-05-2015 |