Chun-Hu
Chun-Hu Chen, Pingtung TW
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20120322645 | METHOD OF SYNTHESIZING MULTI-IPHASE OXIDE CERAMICS WITH SMALL PHASE DOMAIN SIZES - Nanocomposites of multi-phase metal oxide ceramics have been produced from water soluble salts of the resulting metal oxides by a foaming esterification sol-gel method. The evolution of volatile gases at elevated temperature during the esterification reaction causes the formation of a foam product. Nanocomposites of multi-phase metal oxide ceramics have also been produced by a cation polymer precursor method. In this second method, the metal cations are chelated by the polymer and the resulting product is gelled and foamed. Calcination of the resulting foams gives nanocomposite powders with extremely fine, uniform grains and phase domains. These microstructures are remarkably stable both under post-calcination heat treatment and during consolidation by hot-pressing. | 12-20-2012 |
Chun-Hu Chen, Kaohsiung City TW
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20150048280 | METHOD FOR MANUFACTURING NANOSTRUCTURED METAL OXIDE CALCINATE AND NANOSTRUCTURED METAL OXIDE CALCINATE THEREOF - A method for manufacturing a nanostructured metal oxide calcinate suitable for biosensor through a procedure of redox reaction is disclosed in this invention. The nanostructured metal oxide calcinate is free of impurities and produced with better electrocatalytic activity and better conductivity. Thus, an electrode of biosensor can be modified via the nanostructured metal oxide calcinate. The method for manufacturing the nanostructured metal oxide calcinate includes: disposing a first metal material and a second metal material into a reaction slot and making the first metal material and the second metal material dissolved within a solvent to form a mixture, wherein the pH value of the mixture ranges between 0 to 7, the mixture performs a redox reaction process for obtaining a metal oxide material; and eventually calcining the metal oxide material for obtaining a nanostructured metal oxide calcinate. | 02-19-2015 |
Chun-Hu Cheng, Taipei TW
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20150263176 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD FOR THE SAME - A thin film transistor and a manufacturing method for the same are provided. The thin film transistor comprises a substrate, a double channel semiconductor layer, a semiconductor passivation layer, a gate, a gate dielectric layer, a source and a drain. The double channel semiconductor layer comprises a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is made of a metallic oxide semiconductor material and formed above the substrate. The second semiconductor layer is made of the metallic oxide semiconductor material doped by an oxygen gettering metal and formed on the first semiconductor layer. The semiconductor passivation layer is formed on the second semiconductor layer. The gate is formed above the substrate. The gate dielectric layer is formed between the gate and the double channel semiconductor layer. The source and drain are close to the double channel semiconductor layer, formed above the substrate and electrically connected to the double channel semiconductor layer. | 09-17-2015 |