| Patent application number | Description | Published |
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| 20110084276 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process. | 04-14-2011 |
| 20110101353 | Display device and method of manufacturing the same - A display device and a method of manufacturing the same, the display device including a substrate, a semiconductor layer on the substrate, a light shielding layer on the substrate, the light shielding layer and the semiconductor layer being positioned directly on a same layer, a gate insulating layer on the substrate covering the semiconductor layer and the light shielding layer, and a gate electrode on the gate insulating layer, the gate electrode corresponding to a channel region of the semiconductor layer. | 05-05-2011 |
| 20110108848 | Organic Light Emitting Display Device and Manufacturing Method Thereof - An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer. | 05-12-2011 |
| 20110114956 | Organic Light Emitting Display Apparatus and Method of Manufacturing the Same - An organic light emitting display apparatus and a method of manufacturing the organic light emitting display apparatus, whereby the manufacturing process is simplified and the electric characteristics of the organic light emitting display apparatus are improved. The organic light emitting display apparatus includes: a gate electrode that includes a first conductive layer including ITO, a second conductive layer on the first conductive layer, a third conductive layer on the second conductive layer and including ITO, and a fourth conductive layer on the third conductive layer and including IZO or AZO; and a pixel electrode formed in the same layer level as the gate electrode and including a first electrode layer that includes ITO, a second electrode layer on the first electrode layer, a third electrode layer on the second electrode layer and including ITO, and a fourth electrode layer on the third electrode layer and including IZO or AZO. | 05-19-2011 |
| 20110114960 | Organic light emitting diode display and method for manufacturing the same - An organic light emitting diode display includes a substrate main body, a polysilicon semiconductor layer on the substrate main body, a gate insulating layer covering the semiconductor layer, and a gate electrode and a pixel electrode on the gate insulating layer, the gate electrode and the pixel electrode each including a transparent conductive layer portion with a gate metal layer portion on the transparent conductive layer portion, and the pixel electrode including a light emitting area having the transparent conductive layer portion and a non-light emitting area having both the transparent conductive layer portion and the gate metal layer portion. | 05-19-2011 |
| 20110117731 | LASER MASK AND SEQUENTIAL LATERAL SOLIDIFICATION CRYSTALLIZATION METHOD USING THE SAME - A laser mask is disclosed. In one embodiment, the laser mask includes: a mask substrate including i) at least one light transmission portion configured to transmit light therethrough and ii) a plurality of light interruption portions separated by the light transmission portion interposed therebetween. The light interruption portions are configured to block light; and a plurality of protrusion and depression regions positioned on the light interruption portions of the mask substrate. The protrusion and depression regions comprise a plurality of concave portions and a plurality of convex portions which are alternately formed. | 05-19-2011 |
| 20110121302 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device with a simplified manufacturing process and improved electrical characteristics, along with a method of manufacturing the device, are disclosed. The device includes: a substrate having a display area and a non-display area; a thin film transistor (TFT) in the display area; a wiring portion in the non-display area; an intermediate layer electrically connected to the TFT and including an organic light emitting layer; and a counter electrode on the intermediate layer. The TFT includes an active layer, a gate electrode, and source/drain electrodes electrically connected to the active layer. The source/drain electrodes include a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The wiring portion includes the same material as the first conductive layer. One of the source/drain electrodes is longer than the other, to function as a pixel electrode, and is electrically connected to the intermediate layer. | 05-26-2011 |
| 20110127520 | Thin film transistor having oxide semiconductor layer as ohmic contactlayer and method of fabricating the same - A thin film transistor TFT, including a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, the active layer corresponding to the gate electrode and including a channel region, source and drain electrodes contacting the active layer, the source and drain electrodes being separate from each other, and an ohmic contact layer between the active layer and at least one of the source and drain electrodes, the ohmic contact layer including an oxide semiconductor material. | 06-02-2011 |
| 20110128490 | FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A flat panel display device and a method of manufacturing the flat panel display device are disclosed. In one embodiment, the flat panel display device includes: i) a first substrate, ii) an active layer formed over the first substrate, wherein the active layer comprises a source region, a drain region, and a channel region, iii) a gate insulating layer formed on the active layer, iv) a gate electrode formed on the gate insulating layer and over the channel region of the active layer and v) a first interlayer insulating film formed on the gate insulating layer and the gate electrode. The device may further includes 1) a source electrode and a drain electrode electrically connected to the source region and the drain region of the active layer, respectively, through a contact hole, wherein the contact hole is formed in the first interlayer insulating film and the gate insulating layer, 2) a second interlayer insulating film interposed substantially only between i) the first interlayer insulating film and ii) the source electrode and the drain electrode, 3) a passivation layer formed on the first interlayer insulating film and the source electrode and the drain electrode and 4) a pixel electrode electrically connected to the source electrode or the drain electrode through a via-hole formed in the passivation layer. | 06-02-2011 |
| 20110133195 | Thin film transistor, display device including the same, and method of manufacturing the display device - A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å. | 06-09-2011 |
| 20110140005 | ION IMPLANTING SYSTEM - An ion implanting system includes an ion generating system that generates ion beams and an ion implanting chamber in which a work-piece that is irradiated with the ion beams generated from the ion generating system is provided and into which the ion beams generated from the ion generating unit are directed. The ion generating system includes a first ion generating unit that irradiates ions to an upper portion of the work-piece and a second ion generating unit irradiating ions to a lower portion of the work-piece. The ion implanting system a can implant ions into a large work-piece through one ion implantation process with ion generating units arranged alternately with respect to each other in the transfer direction of the work-piece. | 06-16-2011 |
| 20110140107 | Flat panel display device and method of manufacturing the same - A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the active layer and the lower electrode thereon; a gate electrode on the first insulating layer overlying the active layer and including a first conductive layer pattern and a second conductive layer pattern; an upper electrode on the first insulating layer overlying the lower electrode and including the first conductive layer pattern and the second conductive layer pattern; a second insulating layer on the gate electrode and the upper electrode exposing portions of the active layer and portions of the upper electrode; and a source electrode and a drain electrode connected to the exposed portions of the active layer. | 06-16-2011 |
| Patent application number | Description | Published |
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| 20100068841 | Thin Film Transistor Array Panel and Method of Manufacturing the Same - A method of manufacturing a thin film transistor array panel is provided, which includes: forming a semiconductor layer of polysilicon on an insulating substrate; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer; forming a source region and a drain region by doping conductive impurities in the semiconductor layer; forming an interlayer insulating layer covering the gate electrode; forming a source electrode and a drain electrode respectively connected to the source and the drain regions; forming a passivation layer covering the source and the drain electrodes; forming a pixel electrode connected to the drain electrode; and forming a first alignment key when forming one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode, wherein one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode is at least formed by photolithography process using a photoresist pattern as an etch mask, and a second alignment key completely covering the first alignment key is formed at the same layer as the photoresist pattern. | 03-18-2010 |
| 20100096635 | THIN FILM TRANSISTOR ARRAY PANEL INCLUDING ASSISTANT LINES - Improved thin film transistor array panels are provided. In one embodiment, a panel includes a plurality of gate lines, data lines, and a plurality of switching elements connected to the gate lines and the data lines. An interlayer insulating layer is formed between the gate lines and the data lines. A passivation layer covering the gate lines, the data lines, and the switching elements is also provided having a plurality of first contact holes exposing portions of the data lines, wherein the switching elements and the pixel electrodes are connected through the first contact holes. A plurality of contact assistants are formed on the passivation layer and are connected to the data lines through a plurality of second contact holes in the passivation layer. A plurality of auxiliary lines are connected to the data lines through a plurality of third contact holes in the interlayer insulating layer. | 04-22-2010 |
| 20100200860 | Thin Film Transistor Array Panel and Manufacturing Method Thereof - A thin film transistor array panel is provided, which includes: a substrate; a first polysilicon member that is formed on the substrate and includes an intrinsic region, at least one first extrinsic region, and at least one second extrinsic region disposed between the intrinsic region and the at least one first extrinsic region and having an impurity concentration lower than the at least one first extrinsic region; a first insulator formed on the first polysilicon member and having an edge substantially coinciding with a boundary between the at least one first extrinsic region and the at least one second extrinsic region; and a first electrode formed on the first insulator and having an edge substantially coinciding with a boundary between the intrinsic region and the at least one second extrinsic region. | 08-12-2010 |
