| Patent application number | Description | Published |
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| 20100091549 | Non-Volatile Memory Cell with Complementary Resistive Memory Elements - A non-volatile memory cell and method of writing data thereto. In accordance with some embodiments, the memory cell includes first and second resistive memory elements (RMEs) configured to concurrently store complementary programmed resistive states. The first RME is programmed to a first resistive state and the second RME is concurrently programmed to a second resistive state by application of a common write current in a selected direction through the memory cell. | 04-15-2010 |
| 20100110764 | PROGRAMMABLE METALLIZATION CELL SWITCH AND MEMORY UNITS CONTAINING THE SAME - An electronic device that includes a first programmable metallization cell (PMC) that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode; and a second PMC that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode, wherein the first and second PMCs are electrically connected in anti-parallel. | 05-06-2010 |
| 20100110765 | Non-Volatile Memory Cell with Programmable Unipolar Switching Element - A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element. | 05-06-2010 |
| 20100117160 | POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY - Polarity dependent switches for resistive sense memory are described. A memory unit includes a resistive sense memory cell configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell and a semiconductor transistor in electrical connection with the resistive sense memory cell. The semiconductor transistor includes a gate element formed on a substrate. The semiconductor transistor includes a source contact and a bit contact. The gate element electrically connects the source contact and the bit contact. The resistive sense memory cell electrically connects to the bit contact. The source contact and the bit contact are asymmetrically implanted with dopant material. | 05-13-2010 |
| 20100124095 | Floating Source Line Architecture for Non-Volatile Memory - A method and apparatus for writing data to a non-volatile memory cell, such as an RRAM memory cell. In some embodiments, a semiconductor array of non-volatile memory cells comprises a resistive sense element (RSE) and a switching device. A RSE of a plurality of memory cells is connected to a bit line while the switching device of a plurality of memory cells is connected to a word line and operated to select a memory cell. A source line is connected to the switching device and connects a series of memory cells together. Further, a driver circuit is connected to the bit line and writes a selected RSE of a selected source line to a selected resistive state by passing a write current along a write current path that passes through the selected RSE and through at least a portion of the remaining RSE connected to the selected source line. | 05-20-2010 |
| 20100124106 | MAGNETIC MEMORY WITH MAGNETIC TUNNEL JUNCTION CELL SETS - A memory apparatus having at least one memory cell set comprising a first spin torque memory cell electrically connected in series to a second spin torque memory cell, with each spin torque memory cell configured to switch between a high resistance state and a low resistance state. The memory cell set itself is configured to switch between a high resistance state and a low resistance state. The memory apparatus also has at least one reference cell set comprising a third spin torque memory cell electrically connected in anti-series to a fourth spin torque memory cell, with each spin torque memory cell configured to switch between a high resistance state and a low resistance state. The reference cell set itself has a reference resistance that is a midpoint of the high resistance state and the low resistance state of the memory cell set. | 05-20-2010 |
| 20100135066 | BIT LINE CHARGE ACCUMULATION SENSING FOR RESISTIVE CHANGING MEMORY - A memory array includes a plurality of magneto-resistive changing memory cells. Each resistive changing memory cell is electrically between a source line and a bit line and a transistor electrically between the resistive changing memory cell and the bit line. The transistor has a gate electrically between a source region and a drain region and the source region being electrically between the magneto-resistive changing memory cell and the gate. A word line is electrically coupled to the gate. A bit line charge accumulation sensing for magneto-resistive changing memory is also disclosed. | 06-03-2010 |
| 20100210095 | POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY - Methods of forming polarity dependent switches for resistive sense memory are described. Methods for forming a memory unit include implanting dopant material more heavily in a source contact than a bit contact of a semiconductor transistor, and electrically connecting a resistive sense memory cell to the bit contact. The resistive sense memory cell is configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell. | 08-19-2010 |
| 20100271875 | Compensating for Variations in Memory Cell Programmed State Distributions - Method and apparatus for compensating for variations in memory cell programmed state distributions, such as but not limited to a non-volatile memory formed of NAND configured Flash memory cells. In accordance with various embodiments, a memory block is formed from a plurality of memory cells that are arranged into rows and columns within the memory block, each memory cell configured to have a programmed state. A selected row of the memory block is read by concurrently applying a stepped sequence of threshold voltages to each memory cell along the selected row while sequentially decoupling read current from groups of memory cells along the selected row as the programmed states of said groups of cells are successively determined. | 10-28-2010 |
| 20100302849 | NAND FLASH MEMORY WITH INTEGRATED BIT LINE CAPACITANCE - Method and apparatus for outputting data from a memory array having a plurality of non-volatile memory cells arranged into rows and columns. In accordance with various embodiments, charge is stored in a volatile memory cell connected to the memory array, and the stored charge is subsequently discharged from the volatile memory cell through a selected column. In some embodiments, the volatile memory cell is a dynamic random access memory (DRAM) cell from a row of said cells with each DRAM cell along the row coupled to a respective column in the memory array, and each column of non-volatile memory cells comprises Flash memory cells connected in a NAND configuration. | 12-02-2010 |
| 20110002161 | PHASE CHANGE MEMORY CELL WITH SELECTING ELEMENT - A memory cell comprising a phase-change memory cell stacked in series with a resistive switch. The resistive switch has a material switchable between a high resistance state and a low resistance state by the application of a voltage. A plurality of memory cells are used to form a memory array. | 01-06-2011 |
| 20110006377 | Patterning Embedded Control Lines for Vertically Stacked Semiconductor Elements - Various embodiments of the present invention are generally directed to an apparatus with embedded (bottom side) control lines for vertically stacked semiconductor elements, and a method for forming the same. In accordance with various embodiments, a first semiconductor wafer is provided with a first facing surface on which a first conductive layer is formed. The first semiconductor wafer is attached to a second semiconductor wafer to form a multi-wafer structure, the second semiconductor wafer having a second facing surface on which a second conductive wafer is formed. The first conductive layer is contactingly bonded to the second conductive layer to form an embedded combined conductive layer within said structure. Portions of the combined conductive layer are removed to form a plurality of spaced apart control lines that extend in a selected length or width dimension through said structure. | 01-13-2011 |
| 20110007538 | SYSTEMS AND METHODS OF CELL SELECTION IN CROSS-POINT ARRAY MEMORY DEVICES - The disclosure is related to three dimensional cross-point array memory devices and selecting cells within a three dimensional cross-point array memory. In a particular embodiment, three different voltages levels are applied to bit lines of the cross point array to allow for selection of a specific cell. Series of select devices may be implemented to provide a high voltage and a low voltage to specific bit lines, while a middle voltage may also be provided. In a particular embodiment, the select devices comprise Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). | 01-13-2011 |
| 20110007545 | Non-Volatile Memory Cell Stack with Dual Resistive Elements - A non-volatile memory cell and method of use thereof. In some embodiments, an individually programmable resistive sense memory (RSM) element is connected in series with a programmable metallization cell (PMC) switching element. In operation, while the switching element is programmed to a first resistive state, no current passes through the RSM element and while a second resistive state is programmed to the RSM element, current passes through the RSM element. | 01-13-2011 |
| 20110007547 | Vertical Non-Volatile Switch with Punchthrough Access and Method of Fabrication Therefor - A semiconductor device for accessing non-volatile memory cell is provided. In some embodiments, the semiconductor device has a vertical stack of semiconductor layers including a source, a drain, and a well. An application of a drain-source bias voltage to the semiconductor device generates a punchthrough mechanism across the well to initiate a flow of current between the source and the drain. | 01-13-2011 |
| 20110007548 | Hierarchical Cross-Point Array of Non-Volatile Memory - A method and apparatus for reading data from a non-volatile memory cell. In some embodiments, a cross-point array of non-volatile memory cells is arranged into rows and columns. A selection circuit is provided that is capable of activating the first block of memory cells while deactivating the second block of memory cells. Further, a read circuit is provided that is capable of reading a logical state of a predetermined memory cell in the first block of memory cells with a reduced leak current by programming a first resistive state to the block selection elements corresponding to the first block of memory cells while programming a second resistive state to the block selection elements corresponding to the second block of memory cells. | 01-13-2011 |
| 20110007581 | Current Cancellation for Non-Volatile Memory - A method and apparatus for reading data from a non-volatile memory cell. In some embodiments, a cross-point array of non-volatile memory cells is arranged into rows and columns that are each controlled by a line driver. A read circuit is provided that is capable of reading a logical state of a predetermined memory cell by differentiating a non-integrated first reference value from a non-integrated second reference value. Further, each reference value is measured immediately after configuring the column corresponding to the predetermined memory cell to produce a first and second amount of current. | 01-13-2011 |
| 20110007597 | Semiconductor Control Line Address Decoding Circuit - Apparatus and method for decoding addresses of control lines in a semiconductor device, such as a solid state memory (SSM). In accordance with some embodiments, a switching circuit includes an array of switching devices coupled to 2 | 01-13-2011 |
| 20110032748 | POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY - A memory unit includes a resistive sense memory cell configured to switch between a high resistance state and a low resistance state upon passing a current through the resistive sense memory cell and a semiconductor transistor in electrical connection with the resistive sense memory cell. The semiconductor transistor includes a gate element formed on a substrate. The semiconductor transistor includes a source contact and a bit contact. The gate element electrically connects the source contact and the bit contact. The resistive sense memory cell electrically is connected to the bit contact. The source contact is more heavily implanted with dopant material then the bit contact. | 02-10-2011 |
