| Patent application number | Description | Published |
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| 20080254409 | Method for Manufacturing Dental Scaler Tip Using Powder Injection Molding Process, Mold Used Therein and Scaler Tip Manufactured by the Same - The present invention relates to a method for manufacturing a dental scaler tip using a powder injection molding process which can produce the article in large quantities to save the manufacturing cost and forms an eccentric discharge port of a scaler tip to operate the mould using only one core pin, a mould used for the same that is provided with slide cores having the various shapes machined according to the article to enable the uniform article to be manufactured rapidly to enhance a characteristic and design of the article, and a scaler tip manufactured by the same that is more excellent in shape-reliability and injects fluid to a front end thereof along a curved section of the tip section to perform effectively an operation. In order to embody the above structure, the method for manufacturing a dental scaler tip consisting a coupling section mounted to the equipment and having a fluid passage formed therein and a curved shaped tip section extended from the coupling section, through a powder injection molding process, comprises the steps of preparing feedstock for injection by means of mixing raw material powder for the powder injection molding process containing titanium (Ti) or stainless steel with high molecular binder; and injecting the feed stock into a mould to form a molding body, wherein, the mould comprise an operating section to which cylindrical shaped core pins having multi steps and an eccentric end formed at a front end thereof for forming the fluid passage of the scaler tip is mounted; and a pair of slide cores disposed for supporting the eccentric ends of the core pins such that the slide cores face to each other and are slid in the direction perpendicular to the movement direction of the core pins to form a cavity corresponding to a shape of an article to be formed by an injecting process. | 10-16-2008 |
| 20080316601 | Method for Manufacturing a Hybrid Microlens - The present invention provides a method for manufacturing hybrid microlenses of a light guiding plate using a semiconductor reflow process, comprising: a first step of aligning a mask on a substrate coated with a photoresist, wherein the mask is formed with a first region through which light can be transmitted and a plurality of second regions through which light cannot be transmitted, and the second regions have different sizes and shapes to form hybrid arrays; a second step of performing slant light exposure and vertical light exposure at least once in such a manner that light radiated from the top to the bottom of the second regions forming the hybrid arrays has an unsymmetrical inclination angle in at least one direction; a third step of developing the slant light-exposed substrate to obtain hybrid photoresist posts with various sizes and shapes; a fourth step of performing a reflow process to allow the hybrid photoresist posts to be curved so that a hybrid microlens pattern can be obtained; a fifth step of fabricating a depressed stamper with the hybrid microlens pattern engraved in a depressed fashion therein; and a sixth step of forming a light guiding plate by using the depressed stamper as a mold so that the hybrid microlens pattern can be formed in a raised pattern in the light guiding plate. | 12-25-2008 |
| 20100165251 | MICROLENS ASSEMBLY FORMED WITH CURVED INCLINE AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT GUIDING PLATE, BACK LIGHT UNIT AND DISPLAY USING THE SAME - Provided are a light guiding plate for providing a background light source to a non-emission display device, a back light unit, and a microlens used therein. The microlens having a curved incline formed therein is made of a light transmitting material to reflect and refract light emitted from a light source. Here, the microlens has a polyhedral shape including a bottom face, a top face opposed to the bottom face, and a plurality of side faces formed between the bottom face and the top face, wherein at least one side face crossing a traveling direction of the light emitted from the light source among the plurality of side faces is a curved face inclined about the bottom face. | 07-01-2010 |
| 20100178614 | METHOD FOR MANUFACTURING A LENS - In the present invention a mask ( | 07-15-2010 |
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| 20080213965 | METHOD FOR MANUFACTURING DMOS DEVICE - A method for manufacturing a semiconductor device is provided. The semiconductor device may be a drain extended metal-oxide-semiconductor (DMOS) device. The method includes: forming a gate insulating film on a semiconductor substrate having an active region; forming a gate on the gate insulating film; forming a low-concentration source region and a low-concentration drain region over the semiconductor substrate by implanting low-concentration impurity ions using the gate as a mask; forming a spacer on sides of the gate; forming a silicide area block (SAB) pattern over the semiconductor substrate, covering a portion of the gate and the low-concentration drain region; and forming a high-concentration source region and a high-concentration drain region over the semiconductor substrate by implanting high-concentration impurity ions using the SAB pattern as a mask. | 09-04-2008 |
| 20090166795 | SCHOTTKY DIODE OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method includes forming a first conductive type buried layer on a semiconductor substrate, forming a second conductive type epi-layer on the semiconductor substrate using an epitaxial growth method such that the epi-layer surrounds the buried layer, forming a first conductive type plug from the surface of the semiconductor substrate to the buried layer, forming a first conductive type well, which is horizontally spaced from the first conductive type plug, from the surface of the semiconductor substrate to the buried layer, and forming a plurality of metal contacts as an anode and cathode of the schottky diode, respectively, by making electrical connection to the well and plug. | 07-02-2009 |
| 20100140691 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate in which a first trench is formed and a second trench is formed at the middle portions of the first trench; and a first ion implantation layer that is formed on the surface of the semiconductor substrate and on the bottom of the first trench, the portions formed on the bottom of the first trench being spaced from each other by the second trench. A gate is formed from the bottom of the both side walls of the first trench to the middle portions thereof; a drift region is formed at both side walls of the first trench over the second trench; and a second ion implantation layer formed on the inner surface of the second trench. | 06-10-2010 |
| 20100165540 | CAPACITOR AND METHOD FOR FABRICATING THE SAME - A capacitor and method of fabricating a capacitor. A method of fabricating a capacitor may include forming a device isolation film on and/or over a semiconductor substrate, forming a polysilicon pattern on and/or over a device isolation film, forming a silicide on and/or over an upper portion of a polysilicon pattern, forming a capacitor insulating film covering a silicide, forming a pre-metal-dielectric (PMD) on and/or over a semiconductor substrate having a capacitor insulating film, and/or forming an upper metal electrode on and/or over a hole on and/or over a PMD, which may expose an insulating film opposite a region of a silicide. | 07-01-2010 |
