Patent application number | Description | Published |
20110071410 | CUFF FOR HEMADYNAMOMETER - Disclosed is a cuff for a hemadynamometer, which is used for measuring blood pressure of a testee. The cuff includes a fluid bag for applying pressure to a body of the testee, at least one flexible member disposed at an outer portion of the fluid bag and a cover member accommodating the fluid bag and the flexible member therein. The flexible member is maintained in a stretched state and is deformed into an annular state when a force is applied to the flexible member in a winding direction of the cuff such that the cuff is wound around the testee. The cuff can be wound around the testee, so that blood pressure is measured. A testee is able to wind the cuff around his or her own arm without the need for assistance. | 03-24-2011 |
20110167658 | AUTOMATIC ANTHROPOMETER - An automatic anthropometer for automatically measuring human height is provided. The automatic anthropometer includes a main post configured to stand vertically to a foot board and have a guiding rail formed integrally with an inner surface in a length direction, a sliding post configured to include a guide wheel that rotates along the guiding rail, and ascend and descend along the length direction of the main post under the guide of the guiding rail to measure height of a user, a head-touch bar configured to be coupled to the sliding post, and a lifting-driving device configured to raise and lower the sliding post. | 07-14-2011 |
20120029380 | BODY COMPOSITION ANALYZER FOR ANIMALS - A body composition analyzer for animals is provided. A movement of an animal may be restrained by controlling a physical motion of a plurality of electrode units that come into contact with feet of the animal and thus, it is possible to effectively restrict the movement of the animal during measuring of a body composition of the animal, thereby more accurately measuring the body composition. | 02-02-2012 |
Patent application number | Description | Published |
20090315095 | Multiple-layer non-volatile memory devices, memory systems employing such devices, and methods of fabrication thereof - In multiple-layered memory devices, memory systems employing the same, and methods of forming such devices, a second memory device layer on a first memory device layer comprises a second substrate including a second memory cell region. The second substrate includes only a single well in the second memory cell region, the single well of the second memory cell region comprising a semiconducting material doped with impurity of one of a first type and second type. The single well defines an active region in the second memory cell region of the second substrate. Multiple second cell strings are arranged on the second substrate in the second active region. Although the second memory cell region includes only a single well, during a programming or erase operation of the memory cells of the second layer, requiring a high voltage to be applied to the single well in the substrate of the second layer, the high voltage will not interfere with the operation of the peripheral transistors of the first layer, second layer, or other layers, since they are isolated from each other. As a result, the substrate of the second layer can be prepared to have a thinner profile, and with fewer processing steps, resulting in devices with higher-density, greater reliability, and reduced fabrication costs. | 12-24-2009 |
20110171787 | MULTIPLE-LAYER NON-VOLATILE MEMORY DEVICES, MEMORY SYSTEMS EMPLOYING SUCH DEVICES, AND METHODS OF FABRICATION THEREOF - In multiple-layered memory devices, memory systems employing the same, and methods of forming such devices, a second memory device layer on a first memory device layer comprises a second substrate including a second memory cell region. The second substrate includes only a single well in the second memory cell region, the single well of the second memory cell region comprising a semiconducting material doped with impurity of one of a first type and second type. The single well defines an active region in the second memory cell region of the second substrate. Multiple second cell strings are arranged on the second substrate in the second active region. Although the second memory cell region includes only a single well, during a programming or erase operation of the memory cells of the second layer, requiring a high voltage to be applied to the single well in the substrate of the second layer, the high voltage will not interfere with the operation of the peripheral transistors of the first layer, second layer, or other layers, since they are isolated from each other. As a result, the substrate of the second layer can be prepared to have a thinner profile, and with fewer processing steps, resulting in devices with higher-density, greater reliability, and reduced fabrication costs. | 07-14-2011 |