Chuc
Charles Chuc, Dorscille FR
Patent application number | Description | Published |
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20110284688 | ROTOR PROVIDED WITH A DEVICE FOR PROTECTING IT AGAINST LIGHTNING, AND AN AIRCRAFT PROVIDED WITH SUCH A ROTOR | 11-24-2011 |
Charles Chuc, Marseille FR
Patent application number | Description | Published |
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20110290942 | ELECTRICAL POWER SUPPLY AND CONTROL DEVICE FOR EQUIPMENT OF A ROTOR, AND AN AIRCRAFT FITTED WITH SUCH A DEVICE - The present invention relates to an electrical power supply and control device ( | 12-01-2011 |
20120074262 | DE-ICING SYSTEM FOR A FIXED OR ROTARY AIRCRAFT WING - A de-icing system for a fixed or rotary aircraft wing, the system including means for generating ultrasound that is transmitted at least locally to an outside surface of the wing, which means comprise a base structure ( | 03-29-2012 |
20120299450 | ELECTRICAL POWER SUPPLY DEVICE FOR ELECTRICALLY POWERING AT LEAST ONE ITEM OF EQUIPMENT ON A ROTARY ROTOR OF AN AIRCRAFT, AND AN AIRCRAFT - An electrical power supply device ( | 11-29-2012 |
20130106177 | DEVICE FOR FEEDING ELECTRICITY TO EQUIPMENT, THE DEVICE BEING INCORPORATED IN THE FLOOR OF AN AIRCRAFT CABIN | 05-02-2013 |
20130194140 | COMMUNICATION DEVICE, AN AIRCRAFT ROTOR, AND AN AIRCRAFT - A communication device ( | 08-01-2013 |
20130243597 | DEVICE FOR MONITORING THE FLAPPING AND/OR LAG BEHAVIOR OF A BLADE OF A ROTORCRAFT ROTOR - The present invention relates to a rotorcraft rotor ( | 09-19-2013 |
David Chuc, Monterey Park, CA US
Patent application number | Description | Published |
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20120274862 | Outdoor Television Antenna - An outdoor television antenna includes VHF antenna elements, UHF antenna elements, reflector elements that are adapted to reflect broadcast signals, a rotation unit having a motor-fixed bolster and a main pole column, an antenna circuit that collects the VHF broadcast signals and the UHF broadcast signals and provides electric power to the rotation unit, a main body that supports the VHF antenna elements, the UHF antenna elements, the reflector elements and the motor-fixed bolster, and encloses the antenna circuit, a control unit that that relays the VHF and UHF broadcast signals and sends electric power to the antenna circuit, a remote controller that sends rotation control signal to the control unit, and a conductive cable that connects the control unit and the antenna circuit. The control circuit controls rotation of the rotation unit in response to the rotation control signal and the motor-fixed bolster rotates the main pole column with electric power delivered through the conductive cable. | 11-01-2012 |
Kien N. Chuc, Cupertino, CA US
Patent application number | Description | Published |
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20110011338 | FLOW CONTROL FEATURES OF CVD CHAMBERS - Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures. | 01-20-2011 |
20120180954 | SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA - Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit. | 07-19-2012 |
20130082197 | SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA - Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit. | 04-04-2013 |
20130153148 | SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA - Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit. | 06-20-2013 |
20150013793 | FLOW CONTROL FEATURES OF CVD CHAMBERS - Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures. | 01-15-2015 |
Kien N. Chuc, San Jose, CA US
Patent application number | Description | Published |
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20120073501 | PROCESS CHAMBER FOR DIELECTRIC GAPFILL - A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber. | 03-29-2012 |
20140083362 | PROCESS CHAMBER FOR DIELECTRIC GAPFILL - A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber. | 03-27-2014 |