| Patent application number | Description | Published |
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| 20090222770 | METHOD OF INPUTTING CONTROL INSTRUCTION AND HANDHELD DEVICE THEREOF - A method of inputting a control instruction and a handheld device thereof are provided. The handheld device includes a memory unit, a touch module, and a recognition module. The method includes receiving a writing track input by the user from a touch module, analyzing the writing track by the recognition module to convert the writing track into a track data, and comparing the track data with a feature data stored in the memory unit to judge whether the two are consistent with each other, so as to determine whether to execute a program instruction corresponding to the feature data. Through the handheld device and method, when a user inputs a writing track, the handheld device activates a corresponding application program and specific actions thereof, so as to reduce the time of searching for the application program, thereby enhancing the practicability of the handheld device to the user. | 09-03-2009 |
| 20090273319 | HANDHELD DEVICE WITH FAST-CHARGING CAPABILITY - A handheld device with a fast-charging capability is adapted to be connected to a charger to obtain an electric power. The handheld device includes a battery, a charging circuit, a safety circuit, a control unit, and an input module. The charging circuit is electrically connected to the charger and transfers an electric power to the battery. The safety circuit is used for restricting an upper limit of the electric power transferred by the charging circuit. The input module is provided for a user to input an emergency charge command. Upon receiving the emergency charge command, the control unit instructs the safety circuit to lower the restriction on the charging circuit, so as to raise the upper limit of the electric power that can be obtained by the charging circuit, thereby accelerating the charging of the battery. | 11-05-2009 |
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| 20100130003 | Method of Forming Through-Silicon Vias - A method of forming a semiconductor device having a through-silicon via (TSV) is provided. A semiconductor device is provided having a first dielectric layer formed thereon. One or more dielectric layers are formed over the first dielectric layer, such that each of the dielectric layers have a stacking structure, wherein the stacking structures in the one or more dielectric layers are vertically aligned. The stacking structures may be, for example, metal rings. The stacking structures are then removed to form a first recess. A second recess is formed by extending the first recess into the substrate. The second recess is filled with a conductive material to form the TSV. | 05-27-2010 |
| 20100187670 | On-Chip Heat Spreader - A three dimensional (3D) stacked chip structure with chips having on-chip heat spreader and method of forming are described. A 3D stacked chip structure comprises a first die having a first substrate with a dielectric layer formed on a front surface. One or more bonding pads and a heat spreader may be simultaneously formed in the dielectric layer. The first die is bonded with corresponding bond pads on a surface of a second die to form a stacked chip structure. Heat generated in the stacked chip structure may be diffused to the edges of the stacked chip structure through the heat spreader. | 07-29-2010 |
| 20100187671 | Forming Seal Ring in an Integrated Circuit Die - The formation of a seal ring in a semiconductor integrated circuit (IC) die is described. Through-silicon vias (TSVs) are typically formed in a semiconductor IC die to facilitate the formation of a three dimensional (3D) stacking die structure. The TSVs may be utilized to provide electrical connections between components in different dies of the 3D stacking die structure. A seal ring is formed in the inter-metal dielectric (IMD) layers of an IC die, enclosing an active circuit region. The real ring is formed prior to the formation of the TSVs, preventing moistures or other undesired chemical agents from diffusing into the active circuit region during the subsequent processes of forming TSVs. | 07-29-2010 |
| 20120112322 | Seal Ring in an Integrated Circuit Die - The formation of a seal ring in a semiconductor integrated circuit (IC) die is described. Through-silicon vias (TSVs) are typically formed in a semiconductor IC die to facilitate the formation of a three dimensional (3D) stacking die structure. The TSVs may be utilized to provide electrical connections between components in different dies of the 3D stacking die structure. A seal ring is formed in the inter-metal dielectric (IMD) layers of an IC die, enclosing an active circuit region. The real ring is formed prior to the formation of the TSVs, preventing moistures or other undesired chemical agents from diffusing into the active circuit region during the subsequent processes of forming TSVs. | 05-10-2012 |
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| 20090095342 | SUN-TRACKING POWER GENERATING APPARATUS - A solar-tracking power generating apparatus includes a plurality of sensing units having a directional light-extraction member each, a plurality of solar batteries associated with a light-gathering device each, and a solar trajectory simulation unit. Therefore, the solar-tracking power generating apparatus enables more accurate tracking of solar position and focusing of more sunlight on the solar batteries, so that the solar batteries could absorb more sunlight and convert the same into an increased amount of electric power. | 04-16-2009 |
| 20110253194 | PHOTOELECTRIC CONVERSION - A photoelectric conversion is capable of converting the light energy into electrical power, comprising a tempered glass layer, a lens module, a substrate and a heat sink unit, wherein the lens module is formed from a plurality of lens units, which locate at one side of the tempered glass layer. A gap is formed via a plurality of protruding poles located between the lens units and the tempered glass layer. The gap is filled with transparent rubbers. A plurality of receiving units is located one side of the substrate for dissipating heat energy from the receiving units. The light energy is converted through the receiving units into the electrical energy by focusing the light to the receiving units via the tempered glass layer and the lens module. | 10-20-2011 |
| 20110253883 | LIGHT COLLECTOR - A light collector is capable of collecting a incident light, comprises a light condenser having an incident surface and an exit surface, a light reflecting unit having two end surfaces and a receiving unit, wherein the incident light enters through the incident surface of the light condenser and the light condenser alters an optical distance and an optical direction of the incident light so that the incident light is transmitted evenly to the exit surface of the light condenser. A reflecting layer is positioned inside the light reflecting unit, and the light condenser is positioned at one end surface of the light reflecting unit in order to receive the incident light from the exit surface. The receiving unit is used to receive the incident light exiting from the light reflecting unit so that a photoelectrical process is carried out and the incident light is converted into electrical energy. | 10-20-2011 |
