Patent application number | Description | Published |
20110198611 | III-Nitride Power Device with Solderable Front Metal - Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson. | 08-18-2011 |
20120168922 | High Power Semiconductor Package with Conductive Clip - One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor, a sync transistor, a driver integrated circuit (IC) for driving the control and sync transistors, and a conductive clip electrically coupling a sync drain of the sync transistor to a first leadframe pad of the package, wherein the first leadframe pad of the package is electrically coupled to a control source of the control transistor using a wirebond. The conductive clip provides an efficient connection between the control source and the sync drain by direct mechanical connection and large surface area conduction. A sync source is electrically and mechanically coupled to a second leadframe pad providing a high current carrying capability, and high reliability. The resulting package has significantly reduced electrical resistance, form factor, complexity, and cost when compared to conventional packaging methods using wirebonds for transistor interconnections. | 07-05-2012 |
20120168923 | High Power Semiconductor Package with Conductive Clip on Multiple Transistors - One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor, a sync transistor, a driver integrated circuit (IC) for driving the control and sync transistors, and a conductive clip extending from a sync drain on a top surface of the sync transistor to a control source on a top surface of the control transistor. The conductive clip may also connect to substrate pads such as a leadframe pad for current input and output. In this manner, the conductive clip provides an efficient connection between the control source and the sync drain by direct mechanical connection and large surface area conduction, thereby enabling a package with significantly reduced electrical resistance, form factor, complexity, and cost when compared to conventional packaging methods using wirebonds for transistor interconnections. | 07-05-2012 |
20120168924 | High Power Semiconductor Package with Multiple Conductive Clips - One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor and a sync transistor disposed on a common leadframe pad, a driver integrated circuit (IC) for driving the control and sync transistors, and conductive clips electrically coupling the top surfaces of the transistors to substrate pads such as leadframe pads. In this manner, the leadframe and the conductive clips provide efficient grounding or current conduction by direct mechanical connection and large surface area conduction, thereby enabling a package with significantly reduced electrical resistance, form factor, complexity, and cost when compared to conventional packaging methods using wirebonds for transistor interconnections. | 07-05-2012 |
20120168925 | High Power Semiconductor Package with Conductive Clips and Flip Chip Driver IC - One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor and a sync transistor disposed on a leadframe, a flip chip driver integrated circuit (IC) for driving the control and sync transistors, and conductive clips electrically coupling the top surfaces of the transistors to substrate pads such as leadframe pads. The source of the control transistor is electrically coupled to the drain of the sync transistor using the leadframe and one of the transistor conductive clips. In this manner, the leadframe and the conductive clips provide efficient current conduction by direct mechanical connection and large surface area conduction, thereby enabling a package with significantly reduced electrical resistance, form factor, complexity, and cost when compared to conventional packaging methods using wirebonds for transistor interconnections. | 07-05-2012 |
20120168926 | High Power Semiconductor Package with Conductive Clip and Flip Chip Driver IC with Integrated Control Transistor - One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a sync transistor with a top surface having a drain, a flip chip driver integrated circuit (IC) having an integrated control transistor, the flip chip driver IC driving the sync and control transistors, and a conductive clip electrically coupling the drain of the sync transistor to a common portion of the leadframe shared with a control source of the control transistor. In this manner, the leadframe and the conductive clip provide efficient current conduction by direct mechanical connection and large surface area conduction, significantly reducing package electrical resistance, form factor, complexity, and cost compared to conventional packages. Moreover, by integrating only the control transistor rather than both the control and sync transistor within the flip chip driver IC, the sync transistor may remain separate, simplifying manufacture and providing greater total surface area for thermal dissipation. | 07-05-2012 |
20120181624 | Stacked Half-Bridge Package with a Common Conductive Clip - According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to a common conductive clip, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the common conductive clip, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. The control and sync transistors are stacked on opposite sides of the common conductive clip with the common conductive clip electrically and mechanically coupling the control source with the sync drain, where the common conductive clip has a conductive leg for providing electrical and mechanical connection to an output terminal leadframe. | 07-19-2012 |
20120181674 | Stacked Half-Bridge Package with a Common Conductive Leadframe - According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package further includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. The control and sync transistors are stacked on opposite sides of a common conductive leadframe with the common conductive leadframe electrically and mechanically coupling the control source with the sync drain. The common conductive leadframe thereby serves as the output terminal. | 07-19-2012 |
20120181681 | Stacked Half-Bridge Package with a Current Carrying Layer - According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. A current carrying layer is situated on the sync drain; the control transistor and the sync transistor being stacked on one another, where the current carrying layer provides a high current connection between the sync drain and the control source. | 07-19-2012 |
20120280245 | High Voltage Cascoded III-Nitride Rectifier Package with Stamped Leadframe - Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package with a stamped leadframe have been disclosed. One exemplary embodiment comprises a III-nitride transistor having an anode of a diode stacked atop a source of the III-nitride transistor, and a stamped leadframe comprising a first bent lead coupled to a gate of the III-nitride transistor and the anode of the diode, and a second bent lead coupled to a drain of the III-nitride transistor. The bent leads expose respective flat portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since multiple packages may be assembled at a time, high integration and cost savings may be achieved compared to conventional methods requiring individual package processing and externally sourced parts. | 11-08-2012 |
20120280246 | High Voltage Cascoded III-Nitride Rectifier Package with Etched Leadframe - Some exemplary embodiments of high voltage cascaded III-nitride semiconductor package with an etched leadframe have been disclosed. One exemplary embodiment comprises a III-nitride transistor having an anode of a diode stacked over a source of the III-nitride transistor, and a leadframe that is etched to form a first leadframe paddle portion coupled to a gate of the III-nitride transistor and the anode of the diode, and a second leadframe paddle portion coupled to a drain of the III-nitride transistor. The leadframe paddle portions enable the package to be surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since multiple packages may be assembled at a time, high integration and cost savings may be achieved compared to conventional methods requiring individual package processing and externally sourced parts. | 11-08-2012 |
20120280247 | High Voltage Cascoded III-Nitride Rectifier Package Utilizing Clips on Package Support Surface - Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package utilizing clips on a package support surface have been disclosed. One exemplary embodiment comprises a III-nitride transistor attached to a package support surface and having an anode of a diode stacked over a source of the III-nitride transistor, a first conductive clip coupled to a gate of the III-nitride transistor and the anode of the diode, and a second conductive clip coupled to a drain of the III-nitride transistor. The conductive clips are connected to the package support surface and expose respective flat portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since a low cost printed circuit board (PCB) may be utilized for the package support surface, expensive leadless fabrication processes may be avoided for cost effective manufacturing. | 11-08-2012 |
20130161803 | Semiconductor Package with Conductive Heat Spreader - A semiconductor package that includes a semiconductor die and a heat spreader thermally coupled to the semiconductor and disposed at least partially within the molded housing of the package. | 06-27-2013 |
20130207120 | Power Device with Solderable Front Metal - Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson. | 08-15-2013 |
20130228794 | Stacked Half-Bridge Package with a Common Leadframe - According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package further includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. The control and sync transistors are stacked on opposite sides of a common conductive leadframe with the common conductive leadframe electrically and mechanically coupling the control source with the sync drain. The common conductive leadframe thereby serves as the output terminal. | 09-05-2013 |
20140030854 | High Voltage Cascoded III-Nitride Rectifier Package - Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package utilizing clips on a package support surface have been disclosed. One exemplary embodiment comprises a III-nitride transistor attached to a package support surface and having an anode of a diode stacked over a source of the III-nitride transistor, a first conductive clip coupled to a gate of the III-nitride transistor and the anode of the diode, and a second conductive clip coupled to a drain of the III-nitride transistor. The conductive clips are connected to the package support surface and expose respective flat portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since a low cost printed circuit board (PCB) may be utilized for the package support surface, expensive leadless fabrication processes may be avoided for cost effective manufacturing. | 01-30-2014 |
20140084431 | Semiconductor Package with Heat Spreader - A semiconductor package that includes a semiconductor die and a heat spreader thermally coupled to the semiconductor and disposed at least partially within the molded housing of the package. | 03-27-2014 |
20140175630 | Semiconductor Package with Multiple Conductive Clips - One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor and a sync transistor disposed on a common leadframe pad, a driver integrated circuit (IC) for driving the control and sync transistors, and conductive clips electrically coupling the top surfaces of the transistors to substrate pads such as leadframe pads. In this manner, the leadframe and the conductive clips provide efficient grounding or current conduction by direct mechanical connection and large surface area conduction, thereby enabling a package with significantly reduced electrical resistance, form factor, complexity, and cost when compared to conventional packaging methods using wirebonds for transistor interconnections. | 06-26-2014 |
20140191337 | Stacked Half-Bridge Package - According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. A current carrying layer is situated on the sync drain; the control transistor and the sync transistor being stacked on one another, where the current carrying layer provides a high current connection between the sync drain and the control source. | 07-10-2014 |
20140203419 | Half-Bridge Package with a Conductive Clip - According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to a common conductive clip, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the common conductive clip, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. The control and sync transistors are stacked on opposite sides of the common conductive clip with the common conductive clip electrically and mechanically coupling the control source with the sync drain, where the common conductive clip has a conductive leg for providing electrical and mechanical connection to an output terminal leadframe. | 07-24-2014 |
20140327014 | III-Nitride Rectifier Package - Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package utilizing clips on a package support surface have been disclosed. One exemplary embodiment comprises a III-nitride transistor attached to a package support surface and having an anode of a diode stacked over a source of the III-nitride transistor, a first conductive clip coupled to a gate of the III-nitride transistor and the anode of the diode, and a second conductive clip coupled to a drain of the III-nitride transistor. The conductive clips are connected to the package support surface and expose respective flat portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since a low cost printed circuit board (PCB) may be utilized for the package support surface, expensive leadless fabrication processes may be avoided for cost effective manufacturing. | 11-06-2014 |
20150014703 | III-NITRIDE Device with Solderable Front Metal - Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson. | 01-15-2015 |