Patent application number | Description | Published |
20090159899 | LIGHT- EMITTING DEVICE - A light-emitting device includes a substrate having an epitaxial-forming surface and a back surface opposite to the epitaxial-forming surface, the substrate being formed with a recess indented from the back surface, the back surface having a recessed portion that defines the recess, and a planar portion extending outwardly from the recessed portion; an epitaxy layer; a continuous heat-dissipating layer formed on the planar portion and the recessed portion of the back surface of the substrate; and first and second electrodes coupled electrically to the epitaxy layer. | 06-25-2009 |
20100207142 | LIGHT-EMITTING DIODE LIGHT SOURCE MODULE - A light-emitting diode (LED) light source module is described, comprising: a heat conduction substrate, wherein a surface of the heat conduction substrate includes a plurality of recesses; a plurality of light-emitting diode chips respectively disposed in the recesses; an insulation layer disposed on the surface of the heat conduction substrate outside of the recesses; an electric conduction layer disposed on the insulation layer, wherein the light-emitting diode chips are electrically connected to the electric conduction layer; and an encapsulation layer covering the light-emitting diode chips, the electric conduction layer and the insulation layer. | 08-19-2010 |
20110006326 | LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer. | 01-13-2011 |
20110073894 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - In one aspect of the invention, an LED includes a substrate, an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent conductive layer sequentially stacked on the substrate, and p-type and n-type electrodes. The p-type semiconductor layer has a rough surface region and at least one flat surface region. The transparent conductive layer has a rough surface region and a flat surface region corresponding to the rough surface region and the at least one flat surface region of the p-type semiconductor layer, respectively. The p-type electrode is disposed on the flat surface region of the transparent conductive layer. The n-type electrode is electrically couple to the n-type semiconductor layer. | 03-31-2011 |
20120037946 | LIGHT EMITTING DEVICES - In one aspect of the invention, a light emitting device includes a substrate, and a multilayered structure having an n-type semiconductor layer formed in a light emitting region and a non-emission region on the substrate, an active layer formed in the light emitting region on the n-type semiconductor layer, and a p-type semiconductor layer formed in the light emitting region on the active layer. The light emitting device also includes a p-electrode formed in the light emitting region and electrically coupled to the p-type semiconductor layer, and an n-electrode formed in the non-emission region and electrically coupled to the n-type semiconductor layer. Further, the light emitting device also includes an insulator formed between the n-electrode and the n-type semiconductor layer in the first portion of the non-emission region to define at least one ohmic contact such that the n-electrode in the first portion of the non-emission region is electrically coupled to the n-type semiconductor layer through the at least one ohmic contact. | 02-16-2012 |
Patent application number | Description | Published |
20080291186 | LIQUID CRYSTAL DISPLAY PANEL - In a liquid crystal display panel, each pixel unit includes first and second pixels, a first scan line coupled to the first pixel, and a second scan line coupled to the second pixel via an active element. During a first scan period, the first scan line, the second scan line and the active element are all activated to write a first voltage to the first and second pixels. During a second scan period, the first scan line remains activated but the second scan line and the active element are deactivated so that a second voltage is written to the first sub-pixel and the second sub-pixel is maintained at the first voltage. | 11-27-2008 |
20100141877 | COLOR FILTER SUBSTRATE, MULTI-VIEW LIQUID CRYSTAL DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME THEREOF - A color filter substrate for multi-view displaying including a substrate, a light shielding-layer, and a color filter layer is provided. The substrate has a first surface, a second surface, and a plurality of concaves. The first surface is opposite to the second surface. The concaves are located at the first surface. The light-shielding layer disposed on the first surface of the substrate defines a plurality of light-transparent openings. The color filter layer has a plurality of sub-pixel areas including at least one first sub-pixel area and at least one second sub-pixel area. A first light is transmitted to a first viewer by passing through one of the light-transparent openings and one of the at least one first sub-pixel area, and simultaneously, a second light is transmitted to a second viewer by passing through the same one of the light-transparent openings and one of the at least one second sub-pixel area. | 06-10-2010 |
Patent application number | Description | Published |
20090067545 | Receiver of high speed digital interface - A receiver of a high speed digital interface includes at least one differential amplifier, a pair of resistive elements, a current source and a pair of transistors. The differential amplifier receives a small differential signal at a pair of input terminals and outputs an amplified differential signal. Each of the resistive elements has one end coupled to one of the input terminals of the differential amplifier and the other end receiving a reference voltage. The pair of transistors has drains respectively coupled to the input terminals of the differential amplifier, sources commonly coupled to the current source and gates receiving a differential feedback signal derived from the amplified differential signal. | 03-12-2009 |
20090091356 | Current-mode differential transmitter and receiver - A current-mode differential transmitter, receiving a single-end input voltage signal and accordingly generating a differential output current signal, is provided. The transmitter includes a first switch, a second switch and a current mirror. The first switch is coupled in a first current path and controlled by the single-end input voltage signal. The second switch is coupled in a second current path and controlled by an inverted signal of the single-end input voltage signal. The current mirror mirrors a reference current to the first current path when the first switch is turned on, and mirrors the reference current to the second current path when the second switch is turned on. The differential output current signal is derived from the currents on the first and second current paths. | 04-09-2009 |
20110095737 | VOLTAGE REGULATOR, AND INTEGRATED CIRCUIT USING THE SAME - A voltage regulator and an integrated circuit using the voltage regulator is provided. The voltage regulator has a bandgap reference circuit, an operational amplifier, a power transistor and a voltage divider. The bandgap reference circuit generates a bandgap reference voltage. The operational amplifier receives the bandgap reference voltage and a feedback voltage to output a control signal for the power transistor. The power transistor is powered by a first voltage source and transforms the first voltage source to a second voltage source according to the control signal. The second voltage source is divided by the voltage divider to generate the feedback voltage and is further used in powering the bandgap reference circuit and the operational amplifier. | 04-28-2011 |