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| 20080198296 | LIQUID CRYSTAL DISPLAY DEVICE, BACKLIGHT MODULE AND FABRICATION METHOD THEREOF - The invention provides a liquid crystal display device, backlight module and method for fabricating the same. The backlight module comprises a frame; a plurality of light-emitting diodes disposed on a bottom surface of the frame; and a mixing light plate disposed over the light-emitting diodes. The backlight module further comprises a diffusion plate disposed on the mixing light plate and a reflective layer formed on an inner sidewall and the bottom surface of the frame. The backlight module has a high luminous uniformity and efficiency by the mixing light plate. | 08-21-2008 |
| 20090311774 | BIOASSAY SYSTEM INCLUDING OPTICAL DETECTION APPARATUSES, AND METHOD FOR DETECTING BIOMOLECULES - A bioassay system is disclosed. The bioassay system may include a plurality of optical detection apparatuses, each of which includes a substrate having a light detector, and a linker site formed over the light detector, the linker site being treated to affix the biomolecule to the linker site. The linker site is proximate to the light detector and is spaced apart from the light detector by a distance of less than or equal to 100 micrometers. The light detector collects light emitted from the biomolecule within a solid angle of greater than or equal to 0.8 SI steridian. The optical detection apparatus may further include an excitation light source formed over the substrate so as to provide a light source for exciting a fluorophore attached to the biomolecule. | 12-17-2009 |
| 20100165451 | OPTICAL DEFLECTOR AND OPTICAL DEFLECTING BOARD - An optical deflector includes a substrate, an electrode layer on the substrate, an insulating layer at a predetermined peripheral region on the electrode layer, exposing the central region of the electrode layer. First electrode sandwiched wall is on the insulating layer. Second electrode sandwiched wall is on the insulating layer corresponding to the first electrode sandwiched wall. A pair of insulating walls is between the first electrode sandwiched wall and the second electrode sandwiched wall in enclosing to form an inner space. An outer wall encloses the pair of insulating layers, the first and the second electrode sandwiched walls at outside. A cap layer covers on the outer wall. A first liquid is filled into the inner space in contact with the electrode layer. A second liquid is filled into the inner spacer without solving to each other and forms a liquid interface. | 07-01-2010 |
| 20110223590 | SINGLE-MOLECULE DETECTION SYSTEM AND METHODS - Embodiments encompass a single-molecule detection system and methods of using the detection system to detect an object. Further, embodiments encompass a detection system comprising a movable light coupler, a waveguide, and a light detector. Embodiments further encompass methods of single-molecule detection, including methods of single-molecule nucleic acid sequencing. | 09-15-2011 |
| 20110306039 | Apparatus for single-molecule detection - An apparatus for detecting an object capable of emitting light. The apparatus comprises a light source and a waveguide. The waveguide comprises a core layer and a first cladding layer. At least one nanowell is formed in at least the first cladding layer. The apparatus further comprises a light detector. The light detector can detect a light emitted from a single molecule object contained in the at least one nanowell. | 12-15-2011 |
| 20110306143 | Apparatus for single-molecule detection - An apparatus for detecting an object capable of emitting light. The apparatus includes a light source and a waveguide. The waveguide includes a core layer and a first cladding layer. At least one nanowell is formed in at least the first cladding layer. The apparatus further includes a light detector. The light detector can detect a light emitted from a single molecule object contained in the at least one nanowell. | 12-15-2011 |
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| 20080308829 | VERTICAL LED WITH CURRENT GUIDING STRUCTURE - Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided. | 12-18-2008 |
| 20090093075 | METHOD OF SEPARATING SEMICONDUCTOR DIES - A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies. | 04-09-2009 |
| 20100258834 | VERTICAL LED WITH CURRENT GUIDING STRUCTURE - Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided. | 10-14-2010 |
| 20110037082 | Smart Integrated Semiconductor Light Emitting System Including Light Emitting Diodes And Application Specific Integrated Circuits (ASIC) - A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) on the substrate, and at least one light emitting diode (LED) on the substrate in electrical communication with the application specific integrated circuit (ASIC). The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated system having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions. | 02-17-2011 |
| 20110042803 | Method For Fabricating A Through Interconnect On A Semiconductor Substrate - A method for fabricating a through interconnect on a semiconductor substrate includes the steps of forming a via on a first side of the substrate part way through the substrate, forming an electrically insulating layer on the first side and in the via, forming an electrically conductive layer at least partially lining the via, forming a first contact on the conductive layer in the via, and thinning the substrate from a second side at least to the insulating layer in the via. The method can also include the step of forming a second contact on a second side of the substrate in electrical contact with the first contact. The method can be performed on a semiconductor wafer to form a wafer scale interconnect component. In addition, the interconnect component can be used to construct semiconductor systems such as a light emitting diode (LED) systems. | 02-24-2011 |
| 20110101400 | LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING - Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device. | 05-05-2011 |
| 20110217799 | METHOD OF SEPARATING SEMICONDUCTOR DIES - A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies. | 09-08-2011 |
| 20110316034 | Side By Side Light Emitting Diode (LED) Having Separate Electrical And Heat Transfer Paths And Method Of Fabrication - A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode having a through interconnect, and a cathode having a through interconnect, which are arranged side by side on the substrate. The light emitting diode also includes a LED chip mounted to the substrate between the anode and the cathode. A method for fabricating the light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect. | 12-29-2011 |
| 20110316039 | VERTICAL LED WITH CURRENT GUIDING STRUCTURE - Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided. | 12-29-2011 |
| 20120074384 | PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES - Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed. | 03-29-2012 |
| 20120091466 | Smart Integrated Semiconductor Light Emitting System Including Nitride Based Light Emitting Diodes (LED) And Application Specific Integrated Circuits (ASIC) - A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions. | 04-19-2012 |
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| 20090248907 | Method for automatically identifying an operating system for a USB device - A method for automatically identifying an operating system for a USB device begins at initializing the USB device, and recording USB commands sent from the operating system. The USB device determines the operating system as a first operating system when there are two successive USB commands of Get Product String, there is one USB command of Get Vender String, there is no USB command of Reset ahead of a USB command of Set Address, there is no USB command of Get Language ID, or there is no USB command of Set Feature Report. The USB device determines the operating system as a second operating system when there is no USB command of Get Vender String, there are two USB commands of Get Language ID and two USB commands of Get Product String, there is one USB command of Get Device Descriptor following a USB command of Get Product String, or there is one USB command of Set Interface Report. | 10-01-2009 |
| 20120068931 | OPTICAL MOUSE - An optical mouse is provided with a light guide. The light guide has a collecting surface, a single reflection surface and an exit surface, guiding a light of a light source to a tracking surface through three interface engagements of a refraction, a reflection and a refraction, so as to reduce optical power loss caused by too many interface engagements, and to increase a gazing angle of the light incident to the tracking surface. An array of micro-lenses, as a light diffuser, can be set on the exit surface to improve optical characteristics and distribution of the light incident to the tracking surface. | 03-22-2012 |
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| 20080197885 | Circuit for detecting maximal frequency of pulse frequency modulation and method thereof - The circuit for detecting the maximal frequency of the pulse frequency modulation includes an oscillator-controlling unit, a delay circuit and a master-slave register. The oscillator-controlling unit is connected to an oscillator, which generates the pulse frequency modulation signals, and includes a first-half pulse-generating module and a second-half pulse-generating module. The delay circuit is connected to the second-half pulse-generating module. The master-slave register includes a clock, an input end and an output end, wherein the input end is connected to the oscillator-controlling unit, and the clock is connected to the delay circuit. | 08-21-2008 |
| 20080205099 | Power transistor circuit and the method thereof - The power transistor circuit with high-voltage endurance includes a first power transistor, a second power transistor and an enabling circuit. The first power transistor includes a first voltage endurance and a first inner resistance, while the second power transistor includes a second voltage endurance and a second inner resistance. The first voltage endurance and the first inner resistance are smaller than the second voltage endurance and the second inner resistance, respectively. The drain of the second power transistor is connected to the drain of the first power transistor and the enabling circuit. The enabling circuit enables the second power transistor first, and when the drain voltage of the first power transistor is smaller than the first endurance, the enabling circuit then enables the first power transistor. | 08-28-2008 |
| 20080218284 | Circuit and method for switching PFM and PWM - The switching method between pulse frequency modulation and pulse width modulation signals is first based on an output voltage of a power transistor to generate a corresponding pulse frequency modulation signal. Next, it is determined whether the corresponding pulse frequency modulation signal has reached its maximal frequency. If so, the initial pulse width modulation signal is adjusted to have the same width as the pulse frequency modulation signal. Thereafter, the adjusted pulse width modulation signal is outputted. | 09-11-2008 |
| 20080224673 | Circuit for starting up a synchronous step-up DC/DC converter and the method thereof - The low voltage circuit for starting up a synchronous step-up DC/DC converter, which connects to a voltage source through an inductor, includes a P-type power transistor, an N-type power transistor and a controller. The P-type power transistor includes a body diode, and one end of the P-type power transistor acts as a power source of an oscillator. The N-type power transistor connects the P-type power transistor in series, and both of the power transistors are not enabled at the same time. The oscillator electrically connects to the controller, which enables the P-type power transistor at initialization time, and enables the N-type power transistor a period after the initialization time. | 09-18-2008 |
| 20080231348 | Circuit for fixing peak current of an inductor and method thereof - The circuit for fixing the peak current of an inductor includes an operating current, a ramp-type boost converter and a comparator. The magnitude of the operating current is proportional to that of the voltage source of the inductor. The ramp-type boost converter is connected to the operating current. One input end of the comparator is connected to a reference voltage, and the other end is connected to the output of the ramp-type boost converter. The output of the comparator is connected to the gate of a power transistor, which controls the turn-on time of the inductor. | 09-25-2008 |
| 20080231386 | Oscillation circuit and the method for using the same - The oscillation circuit includes an output current mirror, a P-N complementary current mirror, a P-type current mirror and an N-type current mirror. The P-N complementary current mirror has the same structure as the output current mirror but has current that is only 1/k times the current of the output current mirror, wherein k is greater than 1. The P-type current mirror connects to the P-N complementary current mirror, and has current that is m times the current of the P-N complementary current mirror, where m is greater than 1. The N-type current mirror has one end connected to the P-type current mirror and another end connected to the output current mirror. The N-type current mirror has current that is n times the current of the P-type current mirror, where | 09-25-2008 |
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| 20090179214 | LIGHT EITTING DEVICE WITH MAGNETIC FIELD - A light emitting device with magnetic field includes a light-emitting structure and a first magnetic-source layer. The light-emitting structure includes a first doped structural layer, a second doped structural layer, an active layer between the two doped structural layers, a first electrode, and a second electrode. The first magnetic-source layer is integrated with the light-emitting structure to produce a magnetic field in the light-emitting structure. The magnetic field transversely shifts a driving current of the light-emitting structure to redistribute in the light-emitting structure. | 07-16-2009 |
| 20100282304 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A bi-functional photovoltaic device is provided. The bi-functional photovoltaic device includes at least one solar cell and a control device. Each of the solar cell includes a multilayer semiconductor layer of group III-V compound semiconductor, a first electrode disposed on the back of the multilayer semiconductor layer, and a second electrode disposed on the front of the multilayer semiconductor layer. The control device connects with the at least one solar cell in order to control them functioning as solar cell or light emitting diode. | 11-11-2010 |
| 20110140540 | CHARGE APPARATUS - A charge apparatus including a natural energy conversion module, an energy converter, an energy transmitter, and an energy receiver is provided. The natural energy conversion module receives a natural energy and converts the natural energy into a first electric energy. The energy converter is electrically connected to the natural energy conversion module and converts the first electric energy into a wireless energy. The energy transmitter is electrically connected to the energy converter and transmits the wireless energy in a wireless manner. The energy receiver receives the wireless energy in a wireless manner and converts the wireless energy into a second electric energy. | 06-16-2011 |
