Patent application number | Description | Published |
20090301995 | Method for Making a Plate-Like Detachable Structure, in Particular Made of Silicon, and Use of Said Method - Process for fabricating a structure in the form of a wafer, including at least a substrate, a superstrate and at least one intermediate layer interposed between the substrate and the superstrate, the process including: forming, on a substrate, at least one intermediate layer including at least one base material in which extrinsic atoms or molecules are distributed, these differing from the atoms or molecules of the base material, so as to constitute a substructure; applying a base heat treatment to this substructure such that, in the temperature range of this heat treatment, the presence of the chosen extrinsic atoms or molecules in the chosen base material causes a structural transformation of said intermediate layer; and joining a superstrate to said heat-treated intermediate layer so as to obtain said structure in the form of a wafer. | 12-10-2009 |
20100032085 | METHOD FOR PRODUCING SELF-SUPPORTING MEMBRANES - The disclosure relates to methods and systems for separating a membrane from a substrate. In accordance with a preferred embodiment, the method includes applying at least one member to the membrane by way of an adhesive, wherein the adhesive is applied to substantially less than the entirety of the surface of said membrane which is not facing the substrate. The method further includes separating at least a part of the membrane from the substrate by applying a force to the at least one member. | 02-11-2010 |
20110076849 | PROCESS FOR BONDING AND TRANSFERRING A LAYER - A method of fabricating a multilayer substrate may include bonding a front face of a donor substrate to a front face of a receiver substrate by molecular adhesion to form a stack and applying a heat treatment to the stack to consolidate a bond interface between the donor substrate and the receiver substrate. The method may further include thinning a back face of the donor substrate, trimming a periphery of the donor substrate and at least a portion of a periphery of the receiver substrate, and etching the back face of the donor substrate, the periphery of the donor substrate, and the at least a portion of the periphery of the receiver substrate subsequent to thinning the back face of the donor substrate and trimming the periphery of the donor substrate and the at least a portion of the periphery of the receiver substrate. | 03-31-2011 |
20110183495 | ANNEALING PROCESS FOR ANNEALING A STRUCTURE - The invention relates to a process for annealing a structure that includes at least one wafer, with the annealing process including conducting a first annealing of the structure in an oxidizing atmosphere while holding the structure in contact with a holder in a first position in order to oxidize at least portion of the exposed surface of the structure, shifting the structure on the holder into a second position in which non-oxidized regions of the structure are exposed, and conducting a second annealing of the structure in an oxidizing atmosphere while holding the structure in the second position. The process provides an oxide layer on the structure. | 07-28-2011 |
20110233719 | TEST METHOD ON THE SUPPORT SUBSTRATE OF A SUBSTRATE OF THE "SEMICONDUCTOR ON INSULATOR" TYPE - The invention relates to a test method comprising an electrical connection contact on the support of a substrate of the semiconductor-on-insulator type. | 09-29-2011 |
20110250416 | METHODS OF MAKING SUBSTRATE STRUCTURES HAVING A WEAKENED INTERMEDIATE LAYER - This invention provides composite semiconductor substrates and methods for fabricating such substrates. The composite structures include a semiconductor substrate, a semiconductor superstrate and an intermediate layer interposed between the substrate and the superstrate that comprises a material that undergoes a structural transformation When subject to a suitable heat treatment. The methods provide such a heat treatment so that the intermediate layer becomes spongy or porous, being filled with numerous micro-bubbles or micro-cavities containing a gaseous phase. The composite semiconductor substrates with structurally-transformed intermediate layers have numerous applications. | 10-13-2011 |
20120164778 | METHOD OF BONDING BY MOLECULAR BONDING - A method of bonding by molecular bonding between at least one lower wafer and an upper wafer comprises positioning the upper wafer on the lower wafer. In accordance with the invention, a contact force is applied to the peripheral side of at least one of the two wafers in order to initiate a bonding wave between the two wafers. | 06-28-2012 |
20150179520 | METHODS FOR FABRICATION OF SEMICONDUCTOR STRUCTURES USING LASER LIFT-OFF PROCESS, AND RELATED SEMICONDUCTOR STRUCTURES - Methods of fabricating a semiconductor structure include bonding a carrier wafer over a substrate, removing at least a portion of the substrate, transmitting laser radiation through the carrier wafer and weakening a bond between the substrate and the carrier wafer, and separating the carrier wafer from the substrate. Other methods include forming circuits over a substrate, forming trenches in the substrate to define unsingulated semiconductor dies, bonding a carrier substrate over the unsingulated semiconductor dies, transmitting laser radiation through the carrier substrate and weakening a bond between the unsingulated semiconductor dies and the carrier substrate, and separating the carrier substrate from the unsingulated semiconductor dies. Some methods include thinning at least a portion of the substrate, leaving the plurality of unsingulated semiconductor dies bonded to the carrier substrate. | 06-25-2015 |