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Chrystelle
Chrystelle Ayache, Cormeilles-En-Parisis FR
| Patent application number | Description | Published |
|---|---|---|
| 20110068056 | Method for the Biological Treatment of an Effluent and Associated Plant - The invention relates to a method for the biological treatment of an effluent to be treated and containing at least two forms of pollution, one of which is more easily biodegradable than the other, which comprises using a main biological treatment area in which the raw effluent is contacted with biological sludge adapted for consuming a first form of pollution that can be more easily degraded than a second form of pollution, wherein said method is characterised in that comprises collecting a fraction at least of the biological sludge which is isolated at a distance from the main biological treatment area in a so-called bioactivation area and under aeration and time conditions adapted for triggering in said fraction the development of new biological functions capable of consuming the second form of pollution, and further recycling at least a portion of said biological sludge fraction towards the main biological treatment area. | 03-24-2011 |
Chrystelle Lagahe, Crolles FR
| Patent application number | Description | Published |
|---|---|---|
| 20100285213 | PROCESS OF TREATING DEFECTS DURING THE BONDING OF WAFERS - The invention concerns a process of preparing a thin layer to be transferred onto a substrate having a surface topology and, therefore, variations in altitude or level, in a direction perpendicular to a plane defined by the thin layer, this process comprising the formation on the thin layer of a layer of adhesive material, the thickness of which enables carrying out a plurality of polishing steps of its surface in order to eliminate any defect or void or almost any defect or void, in preparation for an assembly via a molecular kind of bonding with the substrate. | 11-11-2010 |
Chrystelle Lagahe-Blanchard, Saint Joseph De Riviere FR
| Patent application number | Description | Published |
|---|---|---|
| 20100176397 | METHOD FOR PRODUCING PARTIAL SOI STRUCTURES COMPRISING ZONES CONNECTING A SUPERFICIAL LAYER AND A SUBSTRATE - The invention relates to a method for producing a semiconductor structure comprising a superficial layer, at least one embedded layer, and a support, which method comprises: | 07-15-2010 |
Chrystelle Lagahe-Blanchard, St. Joseph De Riviere FR
| Patent application number | Description | Published |
|---|---|---|
| 20080254596 | Method for Transferring Wafers - The invention concerns a method for preparing a thin layer ( | 10-16-2008 |
| 20090095399 | METHOD FOR TRIMMING A STRUCTURE OBTAINED BY THE ASSEMBLY OF TWO PLATES - A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer. | 04-16-2009 |
| 20090149005 | METHOD FOR MAKING A DISMOUNTABLE SUBSTRATE - The invention concerns a method for forming a growth mask on the surface of an initial crystalline substrate, comprising the following steps: | 06-11-2009 |
