| Patent application number | Description | Published |
|---|
| 20080254591 | Method for Making a Thin-Film Element - A method for making a thin-film element includes epitaxially growing a first crystalline layer on a second crystalline layer of a support where the second crystalline layer is a material different from the first crystalline layer, the first crystalline layer having a thickness less than a critical thickness. A dielectric layer is formed on a side of the first crystalline layer opposite to the support to form a donor structure. The donor structure is assembled with a receiver layer and the support is removed. | 10-16-2008 |
| 20080268615 | Treatment of a Germanium Layer Bonded with a Substrate - The invention relates to a treatment method of a structure comprising a thin Ge layer on a substrate, said layer having been previously bonded with the substrate, the method comprising a treatment to improve the electrical properties of the layer and/or the interface of the Ge layer with the underlying layer, characterised in that said treatment is a heat treatment applied at a temperature between 500° C. and 600° C. for not more than 3 hours. | 10-30-2008 |
| 20090120568 | METHOD OF TRANSFERRING A THIN FILM ONTO A SUPPORT - A method of transferring a thin film onto a first support, includes supplying a structure comprising a film of which at least one part originates from a solid substrate of a first material and which is solidly connected to a second support having a thermal expansion coefficient that is different from that of the first material and close to that of the first support, forming an embrittled area inside the film that defines the thin film to be transferred, affixing the film that is solidly connected to the second support to the first support, and breaking the film at the embrittled area. | 05-14-2009 |
| 20090161405 | DATA STORAGE MEDIUM AND ASSOCIATED METHOD - A data storage medium includes | 06-25-2009 |
| 20100052104 | METHOD FOR FABRICATING A LOCALLY PASSIVATED GERMANIUM-ON-INSULATOR SUBSTRATE - The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localised positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention. | 03-04-2010 |
| 20100075461 | METHOD FOR TRANSFERRING CHIPS ONTO A SUBSTRATE - The invention relates to a method for making a stack of at least two stages of circuits, each stage comprising a substrate and at least one component ( | 03-25-2010 |
| 20100184303 | Method for revealing emergent dislocations in a germanium-base crystalline element - The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer. | 07-22-2010 |
| 20100221891 | METHOD OF PRODUCING A HYBRID SUBSTRATE BY PARTIAL RECRYSTALLIZATION OF A MIXED LAYER - A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated. | 09-02-2010 |
| 20110018132 | OBJECT INCLUDING A GRAPHIC ELEMENT TRANSFERRED ON A SUPPORT AND METHOD FOR MAKING SUCH AN OBJECT - An object including at least one graphic element, including at least one layer including at least one metal and etched according to a pattern of the graphic element, a first face of the layer being positioned opposite a face of at least one at least partly transparent substrate, a second face, opposite to the first face, of the layer being covered with at least one passivation layer fixed to at least one face of at least one support by wafer bonding and forming with the support a monolithic structure, and the layer including at least at the second face, at least one area including the metal and at least one semiconductor. | 01-27-2011 |
