Patent application number | Description | Published |
20120111396 | Photovoltaic Devices and Associated Methods - A method for making a semiconductor device includes providing a semiconductor material and doping at least a portion of the semiconductor material to form at least one doped region. A portion of the semiconductor material is removed with a pulsed laser from at least one first region to form at least one adjacent second region. | 05-10-2012 |
20120291859 | Multi-Junction Semiconductor Photovoltaic Apparatus and Methods - A photovoltaic device and methods of manufacturing a photovoltaic device are disclosed. A photovoltaic device includes a first photovoltaic cell, a second photovoltaic cell, a semiconductor layer, and a doped layer. The second photovoltaic cell is in electrical communication with the first photovoltaic cell. The semiconductor layer includes a textured portion. The doped layer is configured to create a back surface field, the doped layer disposed between a proximal layer of the second photovoltaic cell and the semiconductor layer. | 11-22-2012 |
20120292729 | Optoelectronic Devices Having Deep Level Defects and Associated Methods - Semiconductor structures, devices, and methods that can exhibit various enhanced properties, such as, for example, enhanced light detection properties are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material having an enhanced absorption region and a first defect in the enhanced absorption region, where the first defect is a deep-level defect generated by a first defect carrier type that is either a deep-level donor carrier type or a deep-level acceptor carrier type. The device can also include a second defect in the enhanced absorption region, where the second defect is either a shallow-level defect or a deep-level defect, and where the second defect is generated by a second defect carrier type that is opposite to the first defect carrier type. Furthermore, the enhanced absorption region has an external quantum efficiency of at least about 0.5% for electromagnetic radiation wavelengths greater than 1250 nm. | 11-22-2012 |
20130001553 | SEMICONDUCTOR DEVICES HAVING REDUCED SUBSTRATE DAMAGE AND ASSOCIATED METHODS - Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV. | 01-03-2013 |
20130168826 | LASER SYSTEM WITH POLARIZED OBLIQUE INCIDENCE ANGLE AND ASSOCIATED METHODS - Novel laser processed semiconductor materials, systems, and methods associated with the manufacture and use of such materials are provided. In one aspect, for example, a method of processing a semiconductor material can include providing a semiconductor material and irradiating a target region of the semiconductor material with a beam of laser radiation to form a laser treated region. The laser radiation is irradiated at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°, and the laser radiation can be at least substantially p-polarized. | 07-04-2013 |
20140027774 | Laser Processed Photovoltaic Devices and Associated Methods - Photovoltaic heterojunction devices, combination hetero- homo-junction devices, and associated methods are provided. In one aspect, for example, a photovoltaic device can include a doped semiconductor substrate having a first textured region and a second textured region opposite the first textured region, a first intrinsic semiconductor layer coupled to the first textured region opposite the semiconductor substrate and a second intrinsic semiconductor layer coupled to the second textured region opposite the semiconductor substrate. A first semiconductor layer can be coupled to the first intrinsic semiconductor layer opposite the first textured region, where the first semiconductor layer is doped to an opposite polarity of the doped semiconductor substrate. A second semiconductor layer can be coupled to the second intrinsic semiconductor layer opposite the second textured region, where the second semiconductor layer is doped to a same polarity as the semiconductor substrate but having a higher dopant concentration as the semiconductor substrate. | 01-30-2014 |
20140048899 | LOW DAMAGE LASER-TEXTURED DEVICES AND ASSOCIATED METHODS - Methods for laser processing semiconductor materials for use in optoelectronic and other devices, including materials, devices, and systems associated therewith are provided. In one aspect, a method of minimizing laser-induced material damage while laser-texturing a semiconductor material can include delivering short pulse duration laser radiation to a target region of a semiconductor material to form a textured region having a reorganized surface layer, wherein the laser radiation has a wavelength from about 200 nm to about 600 nm and a pulse duration of from about 10 femtoseconds to about 400 picoseconds, and wherein defect density of the semiconductor material from beneath the reorganized surface layer up to a depth of about 1 micron is less than or equal to about 10 | 02-20-2014 |
20140191354 | LASER SYSTEM WITH POLARIZED OBLIQUE INCIDENCE ANGLE AND ASSOCIATED METHODS - Novel laser processed semiconductor materials, systems, and methods associated with the manufacture and use of such materials are provided. In one aspect, for example, a method of processing a semiconductor material can include providing a semiconductor material and irradiating a target region of the semiconductor material with a beam of laser radiation to form a laser treated region. The laser radiation is irradiated at an angle of incidence relative to the semiconductor material surface normal of from about 5° to about 89°, and the laser radiation can be at least substantially p-polarized. | 07-10-2014 |