Patent application number | Description | Published |
20090297395 | Methods of treating semiconducting materials and treated semiconducting materials - A method for treating semiconducting materials is disclosed. In the disclosed method, a semiconducting material having a crystalline structure is provided, at least a portion of the semiconducting material is exposed to a heat source to create a melt pool, and the semiconducting material is then cooled. Semiconducting materials treated by the method are also disclosed. | 12-03-2009 |
20100071421 | Soot Radial Pressing For Optical Fiber Overcladding - A method and apparatus for making an optical fiber preform. The apparatus has an outer wall and an inner wall. The outer wall surrounds the inner wall and the inner wall surrounds an inner cavity of the apparatus. A consolidated glass rod is deposited in the inner cavity after which particulate glass material, such as glass soot, is deposited in the inner cavity around the glass rod. A radially inward pressure is applied against the particulate glass material to pressurize the particulate glass material against the glass rod. | 03-25-2010 |
20100107700 | Methods For Forming Cladding Portions Of Optical Fiber Preform Assemblies - A method of forming a cladding portion of an optical fiber preform assembly includes positioning a glass core cane in a mold cavity and loading the mold cavity with silica glass soot. The silica glass soot is compressed in an axial direction as the vibratory energy is applied to the mold body to form a soot compact around the glass core cane, wherein the soot compact is the cladding portion of an optical fiber preform assembly and the glass core cane is a core portion of the optical fiber preform assembly. | 05-06-2010 |
20100290946 | METHODS OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL ON A MOLD COMPRISING SEMICONDUCTING MATERIAL - The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells. | 11-18-2010 |
20110033643 | METHODS OF MAKING AN UNSUPPORTED ARTICLE OF PURE OR DOPED SEMICONDUCTING MATERIAL - The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells. | 02-10-2011 |
20110101281 | METHOD OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL - A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal. | 05-05-2011 |
20120267280 | VESSEL FOR MOLTEN SEMICONDUCTING MATERIALS AND METHODS OF MAKING THE SAME - The disclosure relates to vessels configured to contain molten semiconducting materials. The vessels include a high purity fused silica lining having a base and sidewalls that define an interior volume, and a fused silica backing proximate the external surfaces of the lining | 10-25-2012 |
20130344641 | MECHANICAL AND CHEMICAL TEXTURIZATION OF A SILICON SHEET FOR PHOTOVOLTAIC LIGHT TRAPPING - A process for modifying a surface of a cast polycrystalline silicon sheet to decrease the light reflectance of the cast polycrystalline sheet is disclosed. The cast polycrystalline silicon sheet has at least one structural feature resulting from the cast polycrystalline silicon sheet being directly cast to a thickness less than 1000 micrometers. The process comprises grit blasting the surface of the cast polycrystalline silicon sheet to give an abraded surface on the cast polycrystalline silicon sheet. The process further comprises chemically etching the abraded surface of the cast polycrystalline silicon sheet to give a chemically-etched, abraded surface. The light reflectance of the chemically-etched, abraded surface is decreased in comparison to the light reflectance of the surface of the cast polycrystalline silicon sheet before the step of grit blasting. | 12-26-2013 |