| Patent application number | Description | Published |
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| 20080285039 | DYNAMIC PLASMONICS-ENABLED SIGNAL ENHANCEMENT, A DEVICE COMPRISING THE SAME, AND A METHOD USING THE SAME - Disclosed herein is a plasmonics platform comprising a substrate; a plurality of periodically spaced nanoholes and/or nanoparticles disposed upon the substrate; wherein the average first order of periodicity between the nanoholes and/or the nanoparticles is about 5 to about 1,000 nm; and a microelectromechanical and/or a nanoelectromechanical system in operative communication with the substrate so as to vary the average first order of periodicity between the nanoholes and/or the nanoparticles. | 11-20-2008 |
| 20080308394 | MICRO-ELECTROMECHANICAL SYSTEM BASED SWITCHING - A current control device is disclosed. The current control device includes control circuitry integrally arranged with a current path and at least one micro electromechanical system (MEMS) switch disposed in the current path. The current control device further includes a hybrid arcless limiting technology (HALT) circuit connected in parallel with the at least one MEMS switch facilitating arcless opening of the at least one MEMS switch, and a pulse assisted turn on (PATO) circuit connected in parallel with the at least one MEMS switch facilitating arcless closing of the at least one MEMS switch. | 12-18-2008 |
| 20080310056 | REMOTE-OPERABLE MICRO-ELECTROMECHANICAL SYSTEM BASED OVER-CURRENT PROTECTION APPARATUS - The present invention provides a remote operable over-current protection apparatus. The apparatus includes control circuitry integrally arranged on a current path and a micro electromechanical system (MEMS) switch disposed on the current path, the MEMS switch responsive to the control circuitry to facilitate the interruption of an electrical current passing through the current path. The apparatus further includes a communication connection in signal connection with the control circuitry such that the control circuitry is responsive to a control signal on the communication connection to control a state of the MEMS switch. | 12-18-2008 |
| 20090096088 | SEALED WAFER PACKAGING OF MICROELECTROMECHANICAL SYSTEMS - Multiple microelectromechanical systems (MEMS) on a substrate are capped with a cover using a layer that may function as a bonding agent, separation layer, and hermetic seal. A substrate has a first side with multiple MEMS devices. A cover is formed with through-holes for vias, and with standoff posts for layer registration and separation. An adhesive sheet is patterned with cutouts for the MEMS devices, vias, and standoff posts. The adhesive sheet is tacked to the cover, then placed on the MEMS substrate and heated to bond the layers. The via holes may be metalized with leads for circuit board connection. The MEMS units may be diced from the substrate after sealing, thus protecting them from contaminants. | 04-16-2009 |
| 20090107812 | ELECTRICAL CONNECTION THROUGH A SUBSTRATE TO A MICROELECTROMECHANICAL DEVICE - An electrical through-connection, or via, that passes through a substrate to a bus on a first surface of the substrate. The via may be configured with an interlock such that the electrically conductive core of the via is constrained to thermally expand towards the second surface, away from the bus, thus preventing damage to the bus. The interlock may be a local constriction or enlargement of the via near the first surface of the substrate. The via may be greater in length along the bus than a unit spacing of beams in a parallel microswitch array actuated in unison along the bus. The via may be narrower in width than in length, and may form a trapezoidal geometry that is larger at the second surface of the substrate than at the first surface. | 04-30-2009 |
| 20090159409 | MEMS MICROSWITCH HAVING A DUAL ACTUATOR AND SHARED GATE - In accordance with one aspect of the present invention, a MEMS switch is provided. The MEMS switch includes a substrate, a first and a second actuating element electrically coupled together, an anchor mechanically coupled to the substrate and supporting at least one of the first and second actuating elements, and a gate driver configured to actuate the first and second actuating elements. | 06-25-2009 |
| 20090159410 | MEMS MICROSWITCH HAVING A CONDUCTIVE MECHANICAL STOP - A MEMS switch includes a substrate, a movable actuator coupled to the substrate, a substrate contact, a substrate electrode, and a conductive stopper electrically coupled to the movable actuator and structured to prevent the movable actuator from contacting the substrate electrode while allowing the movable actuator to make contact with the substrate contact. | 06-25-2009 |
| 20090160584 | MEMS SWITCH WITH IMPROVED STANDOFF VOLTAGE CONTROL - A MEMS switch is provided including a substrate, a movable actuator coupled to the substrate and having a first side and a second side, a first fixed electrode coupled to the substrate and positioned on the first side of the movable actuator to generate a first actuation force to pull the movable actuator toward a conduction state, and a second fixed electrode coupled to the substrate and positioned on the second side of the movable actuator to generate a second actuation force to pull the movable actuator toward a non-conducting state. | 06-25-2009 |
| 20100156577 | MICRO-ELECTROMECHANICAL SYSTEM SWITCH - A micro electro-mechanical system switch is presented. The switch includes a base substrate having a support surface. An actuating surface having a notch and an electrical contact surface having an extension is provided. The extension is disposed within the notch. A beam is attached to the base substrate. The beam includes an actuatable free end that is configured to flex upon actuation and to make contact with at least a portion of the extension and carry current therethrough. | 06-24-2010 |
| 20100252403 | HIGH VOLTAGE SWITCH AND METHOD OF MAKING - Electrostatic devices, systems and methods are presented. One embodiment is an electrostatic device including a substrate, a first electrode disposed on the substrate, a movable element having a second electrode and a control electrode. The control electrode is disposed in electrostatic communication with the movable element. The control electrode includes a protection layer having resistivity in a range of from about 1 ohm-cm to about 10 kohm-cm. | 10-07-2010 |
| 20110036690 | SWITCH STRUCTURES - A device, such as a switch structure, is provided, the device including a contact and a conductive element. The conductive element can be configured to be selectively moveable between a non-contacting position, in which the conductive element is separated from the contact (in some cases by a distance less than or equal to about 4 μm, and in others by less than or equal to about 1 μm), and a contacting position, in which the conductive element contacts and establishes electrical communication with the contact. When the conductive element is disposed in the non-contacting position, the contact and the conductive element can be configured to support an electric field therebetween with a magnitude of greater than 320 V μm | 02-17-2011 |
| 20110062003 | CONTACT MATERIAL, DEVICE INCLUDING CONTACT MATERIAL, AND METHOD OF MAKING - A device for controlling the flow of electric current is provided. The device comprises a first conductor as thin film form; a second conductor switchably coupled to the first conductor to alternate between an electrically connected state with the first conductor and an electrically disconnected state with the first conductor. At least one conductor further comprises an electrical contact, the electrical contact comprising a solid matrix comprising a plurality of pores; and a filler material disposed within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K. A method to make an electrical contact is provided. The method includes the steps of: providing a substrate; providing a plurality of pores on the substrate; and disposing a filler material within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575 K. | 03-17-2011 |
| 20110067983 | SWITCH STRUCTURE AND METHOD - Provided is a device, such as a switch structure, that includes a contact and a conductive element that is configured to be deformable between a first position in which the conductive element is separated from the contact and a second position in which the conductive element contacts the contact. The conductive element can be formed substantially of metallic material configured to inhibit time-dependent deformation. For example, the metallic material may be configured to exhibit a maximum steady-state plastic strain rate of less than 10 | 03-24-2011 |
| 20110128112 | SWITCH STRUCTURES - A device, such as a switch structure, is provided. The switch structure can include a contact and a conductive element each respectively disposed on a substrate. The conductive element can be composed substantially of metallic material, and can be configured to be deformable between a first position, in which the conductive element is separated from the contact by a separation distance, and a second position, in which the conductive element contacts the contact and stores mechanical energy. The conductive element can be further configured such that, subsequent to being deformed into the second position at a temperature between about room temperature and about half of a melting temperature of the metallic material for a cumulative time of at least 10 | 06-02-2011 |
