Patent application number | Description | Published |
20080296737 | Methods for Manufacturing a Structure on or in a Substrate, Imaging Layer for Generating Sublithographic Structures, Method for Inverting a Sublithographic Pattern, Device Obtainable by Manufacturing a Structure - One possible embodiment is a method of manufacturing a structure on or in a substrate with the following steps | 12-04-2008 |
20090033362 | Method for Forming a Structure on a Substrate and Device - In one aspect, a method of forming a structure on a substrate is disclosed. For example, the method includes forming a first mask layer and a second mask layer, modifying a material property in regions of the first and second mask layers, and forming the structure based on the modified regions. | 02-05-2009 |
20090053892 | Method of Fabricating an Integrated Circuit - A method of fabricating an integrated circuit, including the steps of forming a first mask layer in the form of a hard mask layer including a plurality of first openings and a second mask layer with at least one second opening which at least partially overlaps with one of the first openings, wherein the at least one second opening is generated lithographically; and at least two neighboring first openings are distanced from each other with a center to center pitch smaller than the resolution limit of the lithography used for generating the second opening. | 02-26-2009 |
20090075462 | Method of Fabricating a Semiconductor Device - The invention relates to a method of fabricating an integrated circuit, including the steps of providing at least one layer; performing a first implantation step, wherein particles are implanted into the layer under a first direction of incidence; performing a second implantation step, wherein particles are implanted into the layer under a second direction of incidence which is different from the first direction of incidence; performing a removal step, wherein the layer is partially removed depending on the local implant dose generated by the first and the second implantation step. | 03-19-2009 |
20090111274 | Methods of Manufacturing a Semiconductor Device and Apparatus and Etch Chamber for the Manufacturing of Semiconductor Devices - Methods of manufacturing a semiconductor device, apparatus and etch chamber for the manufacturing of semiconductor devices are provided. Embodiments are related to the rotating of a semiconductor substrate round an axis perpendicular to its surface during etching or reactive deposition processes, and irradiating a semiconductor substrate non-uniformly during etching or reactive deposition processes. | 04-30-2009 |
20090127722 | Method for Processing a Spacer Structure, Method of Manufacturing an Integrated Circuit, Semiconductor Device and Intermediate Structure with at Least One Spacer Structure - Method for processing at least one spacer structure in a manufacturing process of a semiconductor device, wherein the at least one spacer structure is subjected to at least one etch process step with an isotropic component and the spacer structure comprises at least one point on the surface with a large solid angle opening towards the environment. Method of manufacturing an integrated circuit, including a regional removal of a spacer structure, wherein the removal is determined by a pattern density in the vicinity of the spacer structure. | 05-21-2009 |
20090194840 | Method of Double Patterning, Method of Processing a Plurality of Semiconductor Wafers and Semiconductor Device - A method of double patterning is disclosed. The method includes forming a first photosensitive layer; exposing the first photosensitive layer using a first reticle; developing the first photosensitive layer thereby forming a first image pattern including first elements; forming a second photosensitive layer; exposing the second photosensitive layer using the first reticle; and developing the second photosensitive layer thereby forming a second image pattern. | 08-06-2009 |
20090219496 | Methods of Double Patterning, Photo Sensitive Layer Stack for Double Patterning and System for Double Patterning - Double patterning a photo sensitive layer stack, is disclosed including providing a substrate being coated with a first and a second photo resist layer, exposing both photo resist layers by employing lithographic projection steps, wherein a second lithographic projection step illuminates a latent image with a focal depth at least partially covering the second photo resist layer. | 09-03-2009 |
20090239314 | Methods of Manufacturing a Semiconductor Device - Methods of manufacturing a semiconductor device and an apparatus for the manufacturing of semiconductor devices are provided. An embodiment regards providing a process which changes the volume of at least one layer of a semiconductor substrate or of at least one layer deposited on the semiconductor substrate, and measuring a change in volume of such at least one layer using fluorescence. In another embodiment, a change in volume of such at least one layer is measured using reflection of electromagnetic waves. | 09-24-2009 |
20100048023 | Methods for Manufacturing a Structure on a Substrate and Intermediate Product - Among other implementations, a method for manufacturing a structure on a substrate is described wherein at least one carrier structure is positioned on a substrate and at least one spacer structure is positioned on the sidewalls of the at least one carrier structure, the at least one carrier structure or the at least one spacer structure is subsequently removed and before or after the removal of the at least one spacer structure or the removal of the at least one carrier structure, an etch resistant layer is positioned in at least one of the following regions: a region not covered by the at least one carrier structure, a region not covered by the at least one spacer structure and a region not covered by the at least one carrier structure and the at least one spacer structure. | 02-25-2010 |
20100266939 | Lithographic Mask and Method of Forming a Lithographic Mask - A lithographic mask comprises a first layer including grooves, a second layer including regions, sections and a groove-like structure that encloses the sections. The first and second layers are formed so as to reduce electrical potential differences within the second layer. A method of forming a lithographic mask includes forming first and second layers to dispose the second layer over the first layer, patterning the second layer to comprise sections, a region, and a groove-like structure enclosing the sections, and forming grooves in the first layer at portions not covered by the second layer. The first and second layers are formed to reduce potential differences within the second layers during the step of forming the grooves in the first layer. | 10-21-2010 |