| Patent application number | Description | Published |
|---|
| 20090117711 | Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component - In a method for laterally dividing a semiconductor wafer ( | 05-07-2009 |
| 20090290610 | Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component - A method for laterally dividing a semiconductor wafer ( | 11-26-2009 |
| 20100208763 | Semiconductor Chip and Method for Manufacturing a Semiconductor Chip - A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body. | 08-19-2010 |
| 20100278203 | Radiation-Emitting Semiconductor Chip - The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n | 11-04-2010 |
| 20100296538 | Optoelectronic Component - An optoelectronic component ( | 11-25-2010 |
| 20110007767 | Semiconductor Component and Method for Producing a Semiconductor Component - A semiconductor component includes a semiconductor body with a semiconductor layer sequence having an active region, provided for generating coherent radiation, and an indicator layer. With respect to an interface which delimits the semiconductor body in regions in a vertical direction, on that side of said interface which is remote from the active region, the semiconductor body has a web-like region extending in a vertical direction between the interface and a surface of the semiconductor body. The indicator layer has a material composition that differs from that of the material of the web-like region which adjoins the indicator layer. A distance between the indicator layer and the surface is at most of the same magnitude as a distance between the interface and the surface. | 01-13-2011 |
| 20110013660 | OPTOELECTRONIC SEMICONDUCTOR BODY AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR BODY - An optoelectronic semiconductor body comprises a substrate ( | 01-20-2011 |
| 20110168977 | SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE - An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints. | 07-14-2011 |
