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Christoph Eichler

Christoph Eichler, Tergenheim DE

Patent application numberDescriptionPublished
20110051771Optoelectronic Component and Method for Producing an Optoelectronic Component - An optoelectronic component contains an epitaxial layer sequence (03-03-2011

Christoph Eichler, Tegernheim DE

Patent application numberDescriptionPublished
20090117711Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component - In a method for laterally dividing a semiconductor wafer (05-07-2009
20090290610Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component - A method for laterally dividing a semiconductor wafer (11-26-2009
20100208763Semiconductor Chip and Method for Manufacturing a Semiconductor Chip - A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body.08-19-2010
20100278203Radiation-Emitting Semiconductor Chip - The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n11-04-2010
20100296538Optoelectronic Component - An optoelectronic component (11-25-2010
20110007767Semiconductor Component and Method for Producing a Semiconductor Component - A semiconductor component includes a semiconductor body with a semiconductor layer sequence having an active region, provided for generating coherent radiation, and an indicator layer. With respect to an interface which delimits the semiconductor body in regions in a vertical direction, on that side of said interface which is remote from the active region, the semiconductor body has a web-like region extending in a vertical direction between the interface and a surface of the semiconductor body. The indicator layer has a material composition that differs from that of the material of the web-like region which adjoins the indicator layer. A distance between the indicator layer and the surface is at most of the same magnitude as a distance between the interface and the surface.01-13-2011
20110013660OPTOELECTRONIC SEMICONDUCTOR BODY AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR BODY - An optoelectronic semiconductor body comprises a substrate (01-20-2011

Patent applications by Christoph Eichler, Tegernheim DE

Christoph Eichler, Tegenheim DE

Patent application numberDescriptionPublished
20090309113Optoelectronic Semiconductor Component - An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.12-17-2009

Christoph Eichler, Tagernheim DE

Patent application numberDescriptionPublished
20090206348Composite Substrate, and Method for the Production of a Composite Substrate - A composite substrate (08-20-2009