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Choong-Youl Im

Choong-Youl Im, Suwon-Si KR

Patent application numberDescriptionPublished
20080224600Organic light emitting display (OLED) device and method of fabricating the same - An organic light emitting display (OLED) device having a simple process of fabrication and improved lifetime and reliability, and a method of fabricating the same are disclosed. The OLED device comprises: a substrate; a sealing member which seals a plurality of pixels arranged on a pixel region; and a sealing material which bonds the substrate and the sealing member. Each of the pixels includes a thin film transistor disposed on the substrate, an EL device including a lower electrode connected to the thin film transistor, a pixel isolation layer exposing a portion of the lower electrode, an organic layer formed on at least the exposed portion of the lower electrode, and an upper electrode. A pad interconnection line of a pad interconnection region is covered by a first insulating layer, and a pad of a pad region is covered by a second insulating layer so as to expose a portion of the pad. The first insulating layer and the second insulating layer are formed of the same material as a lower layer of the pixel isolation layer.09-18-2008
20090075438METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - In a method of fabricating organic light emitting diode display, a planarization layer is annealed, cured, provided with an ashing treatment, and surface-treated to reduce roughness of the planarization layer. Therefore, it is possible to improve reduce problems such as a decrease in reflectivity and variation of color coordinates of the organic light emitting diode display due to the roughness of the planarization layer.03-19-2009
20090267074ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A organic light emitting display device includes a thin film transistor (TFT) having a gate electrode, a source electrode and a drain electrode which are insulated from the gate electrode, and a semiconductor layer which is insulated from the gate electrode and which contacts each of the source electrode and the drain electrode; and a pixel electrode electrically connected to one of the source electrode and the drain electrode. The gate electrode is made up of a first conductive layer and a second conductive layer on the first conductive layer, and the pixel electrode is formed of the same material as the first conductive layer of the gate electrode on a same layer as the first conductive layer of the gate electrode.10-29-2009
20090278131Thin film transistor array arrangement, organic light emitting display device having the same, and manufacturing method thereof - A thin film transistor (TFT) array arrangement, an organic light emitting display device that includes the TFT array arrangement and a method of making the TFT array arrangement and the organic light emitting display device. The method seeks to reduce the number of masks used in the making of the TFT array arrangement by employing half-tone masks that are followed by a two step etching process and by forming layers of the capacitor simultaneous with the formation of layers of the source, drain and pixel electrodes. As a result, individual layers of the capacitor are on the same level and are made of the same material as ones of the layers of the source, drain and pixel electrodes. The capacitor has three electrodes spaced apart by two separate dielectric layers to result in an increased capacity capacitor without increasing the size of the capacitor.11-12-2009
20100013745ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device having an electrostatic capacitive type touch panel function with reduced thickness and improved luminance. A display panel of the organic light emitting display device includes a substrate, a display unit having a plurality of pixels on the substrate, and a touch sensing unit on the display unit. The touch sensing unit includes an encapsulation substrate and a capacitive pattern layer on a side of the encapsulation substrate facing the display unit. The capacitive pattern layer has a plurality of openings corresponding in position to the plurality of pixels.01-21-2010
20100045173ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display (OLED) apparatus and a method of manufacturing the same, the OLED apparatus including: a substrate; an active layer formed on the substrate; a gate electrode insulated from the active layer; source and drain electrodes insulated from the gate electrode and electrically connected to the active layer; a pixel defining layer formed on the source and drain electrodes, having an aperture to expose one of the source and drain electrodes; an intermediate layer formed in the aperture and comprising an organic light emitting layer; and a facing electrode which is formed on the intermediate layer. One of the source and drain electrodes has an extension that operates as a pixel electrode. The aperture exposes the extended portion. The intermediate layer is formed on the extended portion.02-25-2010

Patent applications by Choong-Youl Im, Suwon-Si KR

Choong-Youl Im, Suwon KR

Patent application numberDescriptionPublished
20080230767SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a semiconductor device, which forms two insulation layers having different patterns by one mask process, and a method of manufacturing the same. In a semiconductor device having double insulation layers, a photosensitive material is included in an upper insulation layer. During a manufacture of the semiconductor device, the photosensitive material is used as a photo resist layer in order to reduce the number of masks.09-25-2008
20080233665METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device including: forming a semiconductor layer on a substrate with transistor and capacitor formation regions; forming first and second photo resist patterns at the transistor and capacitor formation regions, respectively, the second photo resist pattern having a thickness less than that of the first photo resist pattern; patterning the semiconductor layer using the first and second photo resist patterns as a mask; removing the second photo resist pattern to expose the semiconductor layer at the capacitor formation region; implanting ions in the exposed semiconductor layer to form a first electrode of a capacitor; removing the first photo resist pattern; forming a gate electrode at the transistor formation region; forming an second electrode at the capacitor formatting region; and forming a source region and a drain region at the semiconductor layer formed at both sides of the gate electrode.09-25-2008