| Patent application number | Description | Published |
|---|
| 20090050876 | Transparent Nanowire Transistors and Methods for Fabricating Same - Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible. | 02-26-2009 |
| 20100127242 | TRANSPARENT ELECTRONICS BASED ON TRANSFER PRINTED CARBON NANOTUBES ON RIGID AND FLEXIBLE SUBSTRATES - Methods and devices for transparent electronics are disclosed. According to an embodiment, transparent electronics are provided based on transfer printed carbon nanotubes that can be disposed on both rigid and flexible substrates. Methods are provided to enable highly aligned single-walled carbon nanotubes (SWNTs) to be used in transparent electronics for achieving high carrier mobility while using low-temperature processing. According to one method, highly aligned nanotubes can be grown on a first substrate. Then, the aligned nanotubes can be transferred to a rigid or flexible substrate having pre-patterned gate electrodes. Source and drain electrodes can be formed on the transferred nanotubes. The subject devices can be integrated to provide logic gates and analog circuitry for a variety of applications. | 05-27-2010 |
| 20100133511 | Integrated Circuits Based on Aligned Nanotubes - Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes. | 06-03-2010 |
| 20100240199 | Scalable Light-Induced Metallic to Semiconducting Conversion of Carbon Nanotubes and Applications to Field-Effect Transistor Devices - Among others, techniques are described for forming nanotubes. In one aspect, a method includes forming a base layer of a transition metal on a substrate. The method also includes heating the substrate with the base layer in a mixture of gases to grow nanotubes on the base layer. | 09-23-2010 |
| 20100260745 | METHODS OF USING AND CONSTRUCTING NANOSENSOR PLATFORMS - The present invention relates to the use of nanowires, nanotubes and nanosensor platforms. In one embodiment, the present invention provides a method of constructing a nanosensor platform. In another embodiment, the present invention provides a method of analyzing multiple biomarker signals on a nanosensor platform for the detection of a disease. | 10-14-2010 |
| 20100292348 | DETECTION OF METHYLATED DNA AND DNA MUTATIONS - The present invention relates to various methods of detecting DNA methylation and defected DNA. In one embodiment, the invention provides a nanosensor bound to a probe that is complementary to a DNA methylation sequence. | 11-18-2010 |
| 20110073837 | HIGH-PERFORMANCE SINGLE-CRYSTALLINE N-TYPE DOPANT-DOPED METAL OXIDE NANOWIRES FOR TRANSPARENT THIN FILM TRANSISTORS AND ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE DISPLAYS - Methods, materials, apparatus and systems are described for implementing high-performance arsenic (As)-doped indium oxide (In | 03-31-2011 |
| 20110101302 | WAFER-SCALE FABRICATION OF SEPARATED CARBON NANOTUBE THIN-FILM TRANSISTORS - Methods, materials, systems and apparatus are described for depositing a separated nanotube networks, and fabricating, separated nanotube thin-film transistors and N-type separated nanotube thin-film transistors. In one aspect, a method of depositing a wafer-scale separated nanotube networks includes providing a substrate with a dielectric layer. The method includes cleaning a surface of the wafer substrate to cause the surface to become hydrophilic. The cleaned surface of the wafer substrate is functionalized by applying a solution that includes linker molecules terminated with amine groups. High density, uniform separated nanotubes are assembled over the functionalized surface by applying to the functionalized surface a separated nanotube solution that includes semiconducting nanotubes. | 05-05-2011 |
