Patent application number | Description | Published |
20090050876 | Transparent Nanowire Transistors and Methods for Fabricating Same - Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible. | 02-26-2009 |
20100127242 | TRANSPARENT ELECTRONICS BASED ON TRANSFER PRINTED CARBON NANOTUBES ON RIGID AND FLEXIBLE SUBSTRATES - Methods and devices for transparent electronics are disclosed. According to an embodiment, transparent electronics are provided based on transfer printed carbon nanotubes that can be disposed on both rigid and flexible substrates. Methods are provided to enable highly aligned single-walled carbon nanotubes (SWNTs) to be used in transparent electronics for achieving high carrier mobility while using low-temperature processing. According to one method, highly aligned nanotubes can be grown on a first substrate. Then, the aligned nanotubes can be transferred to a rigid or flexible substrate having pre-patterned gate electrodes. Source and drain electrodes can be formed on the transferred nanotubes. The subject devices can be integrated to provide logic gates and analog circuitry for a variety of applications. | 05-27-2010 |
20100133511 | Integrated Circuits Based on Aligned Nanotubes - Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes. | 06-03-2010 |
20100240199 | Scalable Light-Induced Metallic to Semiconducting Conversion of Carbon Nanotubes and Applications to Field-Effect Transistor Devices - Among others, techniques are described for forming nanotubes. In one aspect, a method includes forming a base layer of a transition metal on a substrate. The method also includes heating the substrate with the base layer in a mixture of gases to grow nanotubes on the base layer. | 09-23-2010 |
20100260745 | METHODS OF USING AND CONSTRUCTING NANOSENSOR PLATFORMS - The present invention relates to the use of nanowires, nanotubes and nanosensor platforms. In one embodiment, the present invention provides a method of constructing a nanosensor platform. In another embodiment, the present invention provides a method of analyzing multiple biomarker signals on a nanosensor platform for the detection of a disease. | 10-14-2010 |
20100292348 | DETECTION OF METHYLATED DNA AND DNA MUTATIONS - The present invention relates to various methods of detecting DNA methylation and defected DNA. In one embodiment, the invention provides a nanosensor bound to a probe that is complementary to a DNA methylation sequence. | 11-18-2010 |
20110073837 | HIGH-PERFORMANCE SINGLE-CRYSTALLINE N-TYPE DOPANT-DOPED METAL OXIDE NANOWIRES FOR TRANSPARENT THIN FILM TRANSISTORS AND ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE DISPLAYS - Methods, materials, apparatus and systems are described for implementing high-performance arsenic (As)-doped indium oxide (In | 03-31-2011 |
20110101302 | WAFER-SCALE FABRICATION OF SEPARATED CARBON NANOTUBE THIN-FILM TRANSISTORS - Methods, materials, systems and apparatus are described for depositing a separated nanotube networks, and fabricating, separated nanotube thin-film transistors and N-type separated nanotube thin-film transistors. In one aspect, a method of depositing a wafer-scale separated nanotube networks includes providing a substrate with a dielectric layer. The method includes cleaning a surface of the wafer substrate to cause the surface to become hydrophilic. The cleaned surface of the wafer substrate is functionalized by applying a solution that includes linker molecules terminated with amine groups. High density, uniform separated nanotubes are assembled over the functionalized surface by applying to the functionalized surface a separated nanotube solution that includes semiconducting nanotubes. | 05-05-2011 |
20110253970 | Transparent nanowire transistors and methods for fabricating same - Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible. | 10-20-2011 |
20110275544 | MICROFLUIDIC INTEGRATION WITH NANOSENSOR PLATFORM - The present invention describes microfluidics being employed to achieve multiplex surface functionalization of nanosensor chips by selectively delivering probe molecules to individual nanosensors in an array, and microfluidics being employed to achieve delivery of a solution containing multiple analytes over individual nanosensors in an array, where each nanosensor was previously configured with a specific capture molecule. | 11-10-2011 |
20110304953 | Nanostructured thin-film electrochemical capacitors - An asymmetric electrochemical capacitor including an anode, a cathode, and an electrolyte between the anode and the cathode. The anode includes manganese dioxide (MnO | 12-15-2011 |
20110304955 | Fabrication of electrochemical capacitors based on inkjet printing - An electrochemical capacitor includes a first electrode including a first flexible substrate, a second electrode including a second flexible substrate, and an electrolyte. The first electrode includes a first layer of single-walled carbon nanotubes inkjetted on the first flexible substrate and a layer of first nanowires disposed on the first layer of single-walled carbon nanotubes. The second electrode includes a second layer of single-walled carbon nanotubes inkjetted on the second flexible substrate and a layer of second nanowires disposed on the second layer of single-walled carbon nanotubes. The electrolyte is sandwiched between the layer of first nanowires and the layer of second nanowires to form the electrochemical capacitor. A flexible energy storage device includes a first flexible substrate, a second flexible substrate, and one or more electrochemical capacitors formed between the first flexible substrate and the second flexible substrate. The flexible energy storage device can be wearable. | 12-15-2011 |
20110309306 | Fabrication of Silicon Nanowires - Nanowires are formed in a process including fluidized bed catalytic vapor deposition. The process may include contacting a gas-phase precursor including a metal or a semiconductor with a catalyst in a reaction chamber under conditions suitable for growth of nanowires including the metal or the semiconductor. The reaction chamber includes a support. The support can be, for example, a particulate support or a product vessel in the fluidized bed reactor. Nanowires are formed on the support in response to interaction between the gas-phase precursor and the catalyst. The nanowire-laden support is removed from the reaction chamber, and the nanowires are separated from the support. An anode or a lithium-ion battery may include nanowires formed in a fluidized bed reactor. | 12-22-2011 |
20110311874 | Silicon-Carbon Nanostructured Electrodes - Hybrid silicon-carbon nanostructured electrodes are fabricated by forming a suspension including carbon nanostructures and a fluid, disposing the suspension on a substrate, removing at least some of the fluid from the suspension to form a carbon nanostructure layer on the substrate, and sputtering a layer of silicon over the carbon nanostructure layer to form the hybrid silicon-carbon nanostructured electrode. Sputtering the layer of silicon facilitates fabrication of large dimension electrodes at room temperature. The hybrid silicon-carbon nanostructured electrode may be used as an anode in a rechargeable battery, such as a lithium ion battery. | 12-22-2011 |
20120248416 | High Performance Field-Effect Transistors - A high performance field-effect transistor includes a substrate, a nanomaterial thin film disposed on the substrate, a source electrode and a drain electrode formed on the nanomaterial thin film, and a channel area defined between the source electrode and the drain electrode. A unitary self-aligned gate electrode extends from the nanomaterial thin film in the channel area between the source electrode and the drain electrode, the gate electrode having an outer dielectric layer and including a foot region and a head region, the foot region in contact with a portion of the nanomaterial thin film in the channel area. A metal layer is disposed over the source electrode, the drain electrode, the head region of the gate electrode, and portions of the nanomaterial thin film proximate the source electrode and the drain electrode in the channel area. | 10-04-2012 |
20120261646 | Integrated Circuits Based on Aligned Nanotubes - Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits one. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes. | 10-18-2012 |
20130119348 | Radio Frequency Devices Based on Carbon Nanomaterials - RF transistors are fabricated at complete wafer scale using a nanotube deposition technique capable of forming high-density, uniform semiconducting nanotube thin films at complete wafer scale, and electrical characterization reveals that such devices exhibit gigahertz operation, linearity, and large transconductance and current drive. | 05-16-2013 |
20130252101 | NANOPOROUS SILICON AND LITHIUM ION BATTERY ANODES FORMED THEREFROM - An electrode for a lithium ion battery, the electrode including nanoporous silicon structures, each nanoporous silicon structure defining a multiplicity of pores, a binder, and a conductive substrate. The nanoporous silicon structures are mixed with the binder to form a composition, and the composition is adhered to the conductive substrate to form the electrode. The nanoporous silicon may be, for example, nanoporous silicon nanowires or nanoporous silicon formed by etching a silicon wafer, metallurgical grade silicon, silicon nanoparticles, or silicon prepared from silicon precursors in a plasma or chemical vapor deposition process. The nanoporous silicon structures may be coated or combined with a carbon-containing compound, such as reduced graphene oxide. The electrode has a high specific capacity (e.g., above 1000 mAh/g at current rate of 0.4 A/g, above 1000 mAh/g at a current rate of 2.0 A/g, or above 1400 mAh/g at a current rate of 1.0 A/g). | 09-26-2013 |
20140070169 | Separated Carbon Nanotube-Based Active Matrix Organic Light-Emitting Diode Displays - A separated carbon nanotube-based active matrix organic light-emitting diode (AMOLED) device including a substrate and transistors. Each transistor includes an individual back gate patterned on the substrate and a gate dielectric layer disposed over the substrate. An active channel including a network of separated semiconducting nanotubes is disposed over a functionalized surface of the gate dielectric layer. A source contact and a drain contact are formed on two ends of the active channel, with the network of separated nanotubes between the source contact and the drain contact. An organic light-emitting diode (OLED) display device is coupled to the drain of one of the transistors. A system includes a display control circuit having a substrate, with scan lines, data lines, and AMOLED devices formed on the substrate, with each AMOLED device coupled to one of the scan lines and one of the data lines. | 03-13-2014 |