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Chong-Hoon

Chong-Hoon Kim, Seoul KR

Patent application numberDescriptionPublished
20110249769METHOD AND APPARATUS OF COMPENSATION FOR AMPLITUDE AND PHASE DELAY USING SUB-BAND POLYPHASE FILTER BANK IN BROADBAND WIRELESS COMMUNICATION SYSTEM - Provided is a method and apparatus improving a deterioration of a gain flatness and a phase characteristic that may be incurred while a baseband signal is transformed into a immediate frequency (IF) signal and a radio frequency (RF) signal in a broadband wireless communication system. A sub-band extractor may divide the broadband signal into multiple sub-band signals, may pre-compensate for a gain and a phase delay of each sub-band signals in the baseband, and may combine the pre-compensated sub-band signals into the single broadband signal and thus, the deterioration of the gain flatness and a phase delay flatness that may be incurred while the broadband signal is transformed into the IF signal and the RF to signal, may be improved.10-13-2011

Chong-Hoon Lee, Suwon-Si KR

Patent application numberDescriptionPublished
20110052952ELECTRODE ASSEMBLY AND RECHARGEABLE BATTERY HAVING AN ELECTRODE ASSEMBLY - An electrode assembly and a rechargeable battery having an electrode assembly. An electrode assembly for a rechargeable battery includes a first electrode; a second electrode; a first separator between the first electrode and the second electrode, the first separator having a plurality of first pores, each of the first pores elongated in a first direction; and a second separator on an opposite side of the first electrode from the first separator, the second separator having a plurality of second pores, each of the second pores elongated in a second direction crossing the first direction.03-03-2011

Chong-Hoon Lee, Seoul KR

Patent application numberDescriptionPublished
20090067622METHOD AND APPARATUS FOR PROTECTING CONTENT CONSUMER'S PRIVACY - Provided is a method of protecting a content consumer's privacy. The method includes classifying contents into content groups, encrypting the contents using different encryption keys, generating a plurality of decryption keys each of which can decrypt all contents in each of the content groups, and provides the generated decryption keys to authorized clients, wherein each client is provided with a different decryption key.03-12-2009

Chong-Hoon Lee, Yongin-Si KR

Patent application numberDescriptionPublished
20110217588SECONDARY BATTERY AND METHOD OF FABRICATING OF THE SECONDARY BATTERY - Disclosed is a secondary battery which includes an electrode assembly comprising inner stacked electrodes and at least one outermost electrode positioned on at least one end of the inner stacked electrodes; and a case configured to house the electrode assembly. Herein, the at least one outermost electrode comprise an inactive material.09-08-2011

Chong-Hoon Shin, Siheung-Si KR

Patent application numberDescriptionPublished
20080314864Method for manufacturing image sensor - Methods of forming a microlens for an image sensor are provided. In one embodiment, the microlens can be oxide film microlens fabricated by forming an oxide film on a substrate; forming a first photoresist pattern on the oxide film; performing a plasma processing with respect to the oxide film using the first photoresist pattern as a mask; removing the first photoresist pattern; and performing an isotropic etching of the plasma processed oxide film. In another embodiment, the oxide film microlens can be fabricated by forming an oxide film on a substrate; forming a first photoresist pattern on the oxide film; implanting ions into the oxide film using the first photoresist pattern as a mask; removing the first photoresist pattern; and performing an isotropic etching of the ion implanted oxide film. Convex shaped microlens can be provided as a result of the etching selectivity to the oxide film.12-25-2008
20090140252IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SENSOR - An image sensor and a method of manufacturing the sensor. A method of manufacturing an image sensor may include at least one of: Forming a gate over a semiconductor substrate. Sequentially depositing a plurality of insulating films over the semiconductor substrate and the gate. Removing an upper-most insulating film of the plurality of insulating films by dry etching, thus forming a spacer at sides of the gate. Removing other insulating films by wet etching, while maintaining a bottom-most insulating film of the plurality of insulating films over the semiconductor substrate. Attacks may be prevented on a surface of a semiconductor substrate, making it possible to reduce generation of a dark signal, prevent plasma damage by controlling the thickness of a remaining oxide film with ease, and making it possible to improve yield and resolution of an image.06-04-2009
20090162987METHOD FOR FABRICATING MIM STRUCTURE CAPACITOR - A method for fabricating a metal/insulator/metal (MIM) structure capacitor includes forming a nitride film that is an insulating layer on a bottom electrode metal layer; forming titanium/titanium nitride (Ti/TiN) that is a top electrode metal layer on the nitride film; coating photo-resist on the top electrode metal layer and patterning a photo-resist layer; selectively etching the top metal electrode layer so that the nitride film remains using the patterned photo-resist layer as an etching mask and using the nitride film as an end point; and removing the remaining nitride film.06-25-2009