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Chol

Kim Chol, San Jose, CA US

Patent application number	Description	Published
20090258720	ADJUSTABLE LENGTH AND TORQUE RESISTANT GOLF SHAFT - An adjustable golf shaft having an upper shaft member, a lower shaft member and an inner rod. The upper shaft member includes an elongated bore therein with an upper bushing fixed within an upper end of the elongated bore therein. The lower shaft member has an elongated bore therein with a middle bushing fixed within an upper end of the elongated bore therein. The inner rod includes a lower end dimensioned to be fixed to a lower bushing, and an upper end dimensioned to be fixed to the upper bushing. The inner rod is adapted to slide within the middle bushing as the length of the shaft changes.	10-15-2009
20100056291	ADJUSTABLE LENGTH AND TORQUE RESISTANT GOLF SHAFT - An adjustable golf shaft having an upper shaft member, a lower shaft member and an inner rod. The upper shaft member includes an elongated bore therein with an upper bushing fixed within an upper end of the elongated bore therein. The lower shaft member has an elongated bore therein with a middle bushing fixed within an upper end of the elongated bore therein. The inner rod includes a lower end dimensioned to be fixed to a lower bushing, and an upper end dimensioned to be fixed to the upper bushing. The inner rod is adapted to slide within the middle bushing as the length of the shaft changes. The shaft also includes a fastener or locking mechanism, which secures the lower shaft member within the upper shaft member.	03-04-2010
20100216568	ADJUSTABLE LENGTH AND TORQUE RESISTANT GOLF SHAFT - An adjustable golf shaft having an upper shaft member, a lower shaft member and a torque resistant mechanism. The adjustable golf shaft includes an upper shaft member having an elongated bore therein, an outer torque resistant member having a substantially cylindrical shape and secured to an inner surface of the upper shaft member, a lower shaft member having a flared upper end configured to fit within the inner surface of the upper shaft member, and an inner torque resistant member having a substantially ring shape and secured to an outer surface of the lower shaft member. The inner torque resistant member is slidably engaged into the outer torque resistant member and configured to prevent the inner torque resistant member from rotating relative to the outer torque member, to thereby form a torque resistant shaft.	08-26-2010
20100304881	ADJUSTABLE LENGTH AND TORQUE RESISTANT GOLF SHAFT - An adjustable golf shaft having an upper shaft member, a lower shaft member and an inner rod. The upper shaft member includes an elongated bore therein with an upper bushing fixed within an upper end of the elongated bore therein. The lower shaft member has an elongated bore therein with a middle bushing fixed within an upper end of the elongated bore therein. The inner rod includes a lower end dimensioned to be fixed to a lower bushing that can slide relative to the lower shaft member. The inner rod is adapted to slide within the middle bushing as the length of the shaft changes. The shaft also includes a fastener or locking mechanism, which secures the lower shaft member within the upper shaft member.	12-02-2010

Soo Young Chol, Fremont, CA US

Patent application number	Description	Published
20090200551	MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR - Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a first gas mixture having a hydrogen containing gas to a silicon containing gas flow rate ratio greater than about 200:1 into the processing chamber, maintaining a first process pressure greater than about 6 Torr in the processing chamber to deposit a first microcrystalline silicon containing layer in presence of a plasma formed from the first gas mixture, supplying a second gas mixture into the processing chamber, and maintaining a second process pressure less than about 5 Torr in the processing chamber to deposit a second microcrystalline silicon containing layer in presence of a plasma formed from the second gas mixture.	08-13-2009

Sung-Gil Chol US

Patent application number	Description	Published
20110104889	Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation - Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.	05-05-2011