| Patent application number | Description | Published |
| 20090108294 | SCALABLE HIGH-K DIELECTRIC GATE STACK - A stack comprising a dielectric interface layer, a high-k gate dielectric layer, a group IIA/IIIB element layer is formed in that order on a semiconductor substrate. A metal aluminum nitride layer and, optionally, a semiconductor layer are formed on the stack. The stack is annealed at a raised temperature, e.g., at about 1,000° C. so that the materials in the stack are mixed to form a mixed high-k gate dielectric layer. The mixed high-k gate dielectric layer is doped with a group IIA/IIIB element and aluminum, and has a lower effective oxide thickness (EOT) than a conventional gate stack containing no aluminum. The inventive mixed high-k gate dielectric layer is amenable to EOT scaling due to the absence of a dielectric interface layer, which is caused by scavenging, i.e. consumption of any dielectric interface layer, by the IIA/IIB elements and aluminum. | 04-30-2009 |
| 20100193896 | METHOD FOR NITRIDATION OF SHALLOW TRENCH ISOLATION STRUCTURE TO PREVENT OXYGEN ABSORPTION - A method for forming an isolation structure includes forming a trench in a semiconductor layer. At least a portion of the trench is filled with a dielectric material including oxygen. A region comprising nitrogen is formed in at least an upper portion of the dielectric material. | 08-05-2010 |
| 20100320547 | SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC - A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y M | 12-23-2010 |
| 20110115027 | STRUCTURE AND METHOD TO OBTAIN EOT SCALED DIELECTRIC STACKS - Equivalent oxide thickness (EOT) scaled high k/metal gate stacks are provided in which the capacitance bottleneck of the interfacial layer is substantially eliminated, with minimal compromise on the mobility of carriers in the channel of the device. In one embodiment, the aforementioned EOT scaled high k/metal gate stacks are achieved by increasing the dielectric constant of the interfacial layer to a value that is greater than the originally formed interfacial layer, i.e., the interfacial layer prior to diffusion of a high k material dopant element therein. In another embodiment, the aforementioned scaled high k/metal gate stacks are achieved by eliminating the interfacial layer from the structure. In yet another embodiment, the aforementioned high k/metal gate stacks are achieved by both increasing the dielectric constant of the interfacial layer and reducing/eliminating the interfacial layer. | 05-19-2011 |
| 20110207280 | SCAVANGING METAL STACK FOR A HIGH-K GATE DIELECTRIC - A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y M | 08-25-2011 |
| Patent application number | Description | Published |
| 20090194936 | METHOD AND APPARATUS FOR RELIEVING STRESS IN A PRE-REGISTRATION NIP - A method of using a buckle for relieving the stresses in sheets caused by differential displacements of drive nips during the registration process includes creating a buckle between pre-registration nips and registration nips. The velocities of the pre-registration nips and registration nips are closely controlled so that the magnitude of buckle between them is large enough to relieve the stresses in the sheet during the registration process, yet small enough to not interfere with the registration process. | 08-06-2009 |
| 20100096795 | FRICTION RETARD FEEDER WITH IMPROVED SHEET SEPARATION - A substrate feeding apparatus and a printing machine is provided herein for feeding substrates from a substrate stack having a nudger roll being selectively movable between a first position and a second position. In the first position, the nudger roll is in contiguous contact with a first substrate of the substrate stack for advancing the first substrate from the substrate stack. The first substrate having a lead edge and a trail edge, with the lead edge leading in a direction of advancement. In the second position, the nudger roll is not in contiguous contact with the substrate stack or the first substrate. A feed roll for further advancing the first substrate in the direction of advancement. A retard member forming a nip with the feed roll. The retard member is used for separating the first substrate from an adjacent second substrate. A guide baffle extending between the substrate stack and the nip, with the guide baffle configured to contact, and to guide, the first substrate as it advances in the direction of advancement from the nudger roll to the nip. The guide baffle provides an angular change in direction to the first substrate as the first substrate advances from the substrate stack to the nip. The guide baffle is configured such that as the lead edge of the first substrate enters the nip, the first substrate has portions thereof spaced from the guide baffle, with the spaced portions sagging towards the guide baffle to provide the first substrate with a concave profile. The nudger roll moves from the first position to the second position after the lead edge of the first substrate enters the nip. | 04-22-2010 |
| 20110089627 | GATE SYSTEM DIVERTING SHEETS INTO MULTI-WAYS - According to aspects illustrated herein, there are provided systems for conveying a sheet article into an intended pathway. The multi-way gate system for diverting sheets into multiple pathways in a sheet conveying device includes at least three pathways for directing the sheet from the sheet conveying member in a particular direction. A single gate plate is between the sheet conveying member and the pathways. The single gate plate is rotatable about a single axis to direct the sheet exiting the sheet conveying member toward one of the pathways. | 04-21-2011 |
| 20110135371 | Printing system architecture with center cross-over and interposer by-pass path - A printing system comprises a paper path architecture for parallel printing using multiple marking engines. The media path configuration enables all the media feed trays to be located in one place, relative to the marking engines. A cross-over module is located between marking engines. The cross-over module can interleave media sheets that are being transported away from a first marking engine with the sheets being transported to the second marking engine. The cross-over module also includes a straight through path that enables media sheets to be transported directly to a finishing device without going through either marking engine. The marking engines include internal duplex loops such that media can be supplied to each engine in alternate groups. A merge module selectively merges the media which can then be further processed in a finishing transition module prior to communication to a finishing device. | 06-09-2011 |
| 20120032389 | GATE SYSTEM DIVERTING SHEETS INTO MULTI-WAYS - According to aspects illustrated herein, there are provided systems for conveying a sheet article into an intended pathway. The multi-way gate system for diverting sheets into multiple pathways in a sheet conveying device includes at least three pathways for directing the sheet from the sheet conveying member in a particular direction. A single gate plate is between the sheet conveying member and the pathways. The single gate plate is rotatable about a single axis to direct the sheet exiting the sheet conveying member toward one of the pathways. | 02-09-2012 |
| 20120098879 | SUBSTRATE MEDIA REGISTRATION SYSTEM AND METHOD IN A PRINTING SYSTEM - Embodiments described herein include a substrate media registration system in a printing system. The registration system can include a deskewing system, a reflexive system, and a controller. The deskewing system is configured to deskew substrate media. The reflexive system is configured to detect the lateral position of the substrate media and at least one of a lead edge and a trail edge of the substrate media being transported in the process direction. The controller is operatively coupled to the reflexive system and is configured to control ejection of ink from a print head system in response to detecting the lateral position of the substrate media and at least one of the lead edge and the trail edge of the substrate media. | 04-26-2012 |
| Patent application number | Description | Published |
| 20090039441 | MOSFET WITH METAL GATE ELECTRODE - Devices comprising, and method for fabricating, a MOSFET with a metal gate electrode are disclosed. In one embodiment, the MOSFET includes a first doped region configured to receive current from a current source, a second doped region configured to drain current from the first doped region when an electric field is modified between the first doped region and the second doped region, and a gate electrode configured to modify the electric field. The gate electrode may include a high-k layer, a hafnium-based metal layer formed above the high-k layer, and a polysilicon layer formed above the hafnium-based metal layer. In a further embodiment, the gate electrode further comprises a titanium-based metal layer formed between the hafnium-based metal layer and the polysilicon layer. | 02-12-2009 |
| 20090108294 | SCALABLE HIGH-K DIELECTRIC GATE STACK - A stack comprising a dielectric interface layer, a high-k gate dielectric layer, a group IIA/IIIB element layer is formed in that order on a semiconductor substrate. A metal aluminum nitride layer and, optionally, a semiconductor layer are formed on the stack. The stack is annealed at a raised temperature, e.g., at about 1,000° C. so that the materials in the stack are mixed to form a mixed high-k gate dielectric layer. The mixed high-k gate dielectric layer is doped with a group IIA/IIIB element and aluminum, and has a lower effective oxide thickness (EOT) than a conventional gate stack containing no aluminum. The inventive mixed high-k gate dielectric layer is amenable to EOT scaling due to the absence of a dielectric interface layer, which is caused by scavenging, i.e. consumption of any dielectric interface layer, by the IIA/IIB elements and aluminum. | 04-30-2009 |
| 20090294867 | DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER METAL - Methods of forming dual metal gates and the gates so formed are disclosed. A method may include forming a first metal (e.g., NMOS metal) layer on a gate dielectric layer and a second metal (e.g., PMOS metal) layer on the first metal layer, whereby the second metal layer alters a work function of the first metal layer (to form PMOS metal). The method may remove a portion of the second metal layer to expose the first metal layer in a first region; form a silicon layer on the exposed first metal layer in the first region and on the second metal layer in a second region; and form the dual metal gates in the first and second regions. Since the gate dielectric layer is continuously covered with the first metal, it is not exposed to the damage from the metal etch process. | 12-03-2009 |
| 20100193896 | METHOD FOR NITRIDATION OF SHALLOW TRENCH ISOLATION STRUCTURE TO PREVENT OXYGEN ABSORPTION - A method for forming an isolation structure includes forming a trench in a semiconductor layer. At least a portion of the trench is filled with a dielectric material including oxygen. A region comprising nitrogen is formed in at least an upper portion of the dielectric material. | 08-05-2010 |
| 20100213553 | METAL OXIDE SEMICONDUCTOR DEVICES HAVING BURIED GATE CHANNELS AND METHODS FOR FABRICATING THE SAME - Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a channel layer overlying the semiconductor substrate, forming a channel capping layer having a first surface overlying the channel layer, oxidizing the first surface of the channel capping layer, and depositing a high-k dielectric layer overlying the channel capping layer. | 08-26-2010 |
| 20100213555 | METAL OXIDE SEMICONDUCTOR DEVICES HAVING CAPPING LAYERS AND METHODS FOR FABRICATING THE SAME - Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a silicon oxide layer overlying the semiconductor substrate, forming a metal oxide gate capping layer overlying the silicon oxide layer, depositing a first metal gate electrode layer overlying the metal oxide gate capping layer, and removing a portion of the first metal gate electrode layer and the metal oxide gate capping layer to form a gate stack. | 08-26-2010 |
| 20100301401 | SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS THAT USE COMPRESSIVE MATERIAL WITH A REPLACEMENT GATE TECHNIQUE - A semiconductor device and related method of fabricating it are provided. An exemplary fabrication process begins by forming a gate structure overlying a layer of semiconductor material, the gate structure comprising a gate insulator overlying the layer of semiconductor material and comprising a temporary gate element overlying the gate insulator. The process continues by forming a layer of compressive material overlying the gate structure, and by removing a first portion of the compressive material to expose an upper surface of the temporary gate element, while leaving a second portion of the compressive material intact and external to sidewalls of the temporary gate element. Thereafter, at least a portion of the temporary gate element is removed, while leaving the second portion of the compressive material intact, resulting in a gate recess. The process continues by at least partially filling the gate recess with a gate electrode material. | 12-02-2010 |
| 20110198696 | FINNED SEMICONDUCTOR DEVICE WITH OXYGEN DIFFUSION BARRIER REGIONS, AND RELATED FABRICATION METHODS - A semiconductor device and related fabrication methods are provided. One exemplary fabrication method forms a fin arrangement overlying an oxide layer, where the fin arrangement includes one or more semiconductor fin structures. The method continues by nitriding exposed portions of the oxide layer without nitriding the one or more semiconductor fin structures, resulting in nitrided portions of the oxide layer. Thereafter, a gate structure is formed transversely overlying the fin arrangement, and overlying the exposed portions of the oxide layer. The nitrided portions of the oxide layer substantially inhibit diffusion of oxygen from the oxide layer into the gate structure. | 08-18-2011 |
| 20110309449 | INTERFACE-FREE METAL GATE STACK - A method of fabricating a gate stack for a transistor includes forming a high dielectric constant layer on a semiconductor layer. A metal layer is formed on the high dielectric constant layer. A silicon containing layer is formed over the metal layer. An oxidized layer incidentally forms during the silicon containing layer formation and resides on the metal layer beneath the silicon containing layer. The silicon containing layer is removed. The oxidized layer residing on the metal layer is removed after removing the silicon containing layer. | 12-22-2011 |
| Patent application number | Description | Published |
| 20090289088 | Wig or hair piece box and form - An exemplary embodiment providing one or more improvements includes wig or hair piece boxes for both the efficient storage and display of wigs or hair pieces before sell, as well as providing simple, efficient and effective storage facilities for wigs or hair pieces for use of the consumer. The wig or hair piece boxes include a form which holds the wig or hair piece and preserves the curl, style, and one directional curl of the hair tip end on the wig or hair piece. This avoids the common problem of loss of original curl and style of the wig or hair piece which plagues conventional wig and hair piece boxes. | 11-26-2009 |
| 20110132942 | Jar shaped form for wig or hair piece storage - An exemplary embodiment providing one or more improvements includes an form which holds a hair extension and maintains the order and curl of the strands of hair. The form provides optimum display of the wig or hair extension evaluation by the prospective user. In addition, after purchase, the form provides a means for convenient space-saving storage of the hair extension which maintains the appearance of the hair extension. | 06-09-2011 |
| 20120006696 | Box and form for wig or hair piece - An exemplary embodiment providing one or more improvements includes wig or hair piece boxes which have a form comprised of a torus-shaped doughnut and a mandrel. In use, the wig or hair pieces are wrapped about the mandrel, the mandrel is placed within the lumen of the torus-shaped doughnut, and the curved portion of the wefts of hair are placed over the curved surface of the torus-shaped doughnut. The wefts of hair may be secured in place with a hairnet and the wig and form placed in a box for sale or storage by the consumer after sale. Embodiments allow the display before sale and convenient storage of wigs and hair pieces by the consumer while preserving the curl of the hair. | 01-12-2012 |
| 20120111742 | Wig or hair piece box and form - An exemplary embodiment providing one or more improvements includes wig or hair piece boxes for both the efficient storage and display of wigs or hair pieces before sell, as well as providing simple, efficient and effective storage facilities for wigs or hair pieces for use of the consumer. The wig or hair piece boxes include a form which holds the wig or hair piece and preserves the curl, style, and one directional curl of the hair tip end on the wig or hair piece. This avoids the common problem of loss of original curl and style of the wig or hair piece which plagues conventional wig and hair piece boxes. | 05-10-2012 |
| Patent application number | Description | Published |
| 20110014535 | METHOD TO IMPROVE RELIABILITY OF A FUEL CELL SYSTEM USING LOW PERFORMANCE CELL DETECTION AT LOW POWER OPERATION - A system and method for detecting a low performing cell in a fuel cell stack using measured cell voltages. The method includes determining that the fuel cell stack is running, the stack coolant temperature is above a certain temperature and the stack current density is within a relatively low power range. The method further includes calculating the average cell voltage, and determining whether the difference between the average cell voltage and the minimum cell voltage is greater than a predetermined threshold. If the difference between the average cell voltage and the minimum cell voltage is greater than the predetermined threshold and the minimum cell voltage is less than another predetermined threshold, then the method increments a low performing cell timer. A ratio of the low performing cell timer and a system run timer is calculated to identify a low performing cell. | 01-20-2011 |
| 20110086286 | METHOD TO PERFORM ADAPTIVE VOLTAGE SUPPRESSION OF A FUEL CELL STACK BASED ON STACK PARAMETERS - A system and method for maintaining the voltage of fuel cells in the fuel cell stack below a predetermined maximum voltage. The method determines a desired voltage set-point value that defines a predetermined maximum fuel cell voltage value and uses the voltage set-point value and an average fuel cell voltage to generate an error value there-between. The method generates a minimum gross power prediction value using the modified voltage set-point value to prevent the fuel cell voltages from going above the predetermined maximum fuel cell voltage value and generating a supplemental power value based on the minimum gross power prediction value and the error value to determine how much power needs to be drawn from the stack to maintain the fuel cell voltage below the predetermined maximum voltage value. The method uses the supplemental power value to charge the battery or operate an auxiliary load coupled to the stack. | 04-14-2011 |
| 20110200895 | METHOD TO AUTOMATICALLY ENABLE/DISABLE STACK RECONDITIONING PROCEDURE BASED ON FUEL CELL STACK PARAMETER ESTIMATION - A system and method for determining when to trigger reconditioning of a fuel cell stack and when to disable the reconditioning of the fuel cell stack. In one embodiment, the stack reconditioning is triggered when a maximum stack power estimation falls below a first predetermined power threshold. The reconditioning of the stack can be disabled so it is not performed when the trigger occurs if the reconditioning process does not raise the maximum power estimation above a second predetermined power threshold or the time from one reconditioning trigger to a next reconditioning trigger is less than a predetermined time threshold, or both. | 08-18-2011 |
| 20110213516 | HEEL AND TOE DRIVING ON FUEL CELL VEHICLE - A system and method for providing nearly instantaneous power in a fuel cell vehicle. The method includes monitoring the brake pedal angle and the accelerator pedal angle of the vehicle, and if the vehicle driver is pressing both the brake pedal and the accelerator pedal at the same time and the vehicle is in a drive gear, activating a heel and toe mode. When the heel and toe mode is activated, the speed of a cathode compressor is increased to a predetermined speed set-point, which is higher than the normal compressor speed for the pedal position. Thus, when the vehicle brake is removed, the compressor speed is high enough to provide enough air to the cathode, so that the stack can generate nearly immediate power. | 09-01-2011 |
| Patent application number | Description | Published |
| 20090287498 | SYSTEM AND METHOD FOR STREAMLINED REGISTRATION OF ELECTRONIC PRODUCTS OVER A COMMUNICATION NETWORK AND FOR VERIFICATION AND MANAGEMENT OF INFORMATION RELATED THERETO - The system and method of the present invention provide integrated or embedded components, for electronic (or other) products, each operable to securely store and selectively provide access to, a unique ID (UID) previously assigned to its corresponding specific product, where the UID of each product is registered with one or more particular UID registration centers over at least one communication network, and associated with one or more data records stored in a corresponding database file at the particular UID registration center, the data records being inclusive of information related to the product, the product purchase history, current ownership, etch, and wherein one or more authorized parties may subsequently advantageously utilize at least one UID (and optionally a verifier) to access, verify, edit, transfer, transmit, and/or otherwise manage at least one information item related to the one or more corresponding registered products in their UID registration center database file. Also provided is an optimized process for verifiable transfer of ownership rights between a product's authorized owner and intended recipient, the transfer process being implemented over at least one communication network with graphical user interfaces provided for each party, where the transfer of ownership rights involves association of the product's UID with the receiving party's data record and confirming ownership transfer, and optional transfer of additional product-related information from the former product owner to the current recipient. | 11-19-2009 |
| Patent application number | Description | Published |
| 20090144074 | SYSTEM AND METHOD FOR STREAMLINED REGISTRATION OF ELECTRONIC PRODUCTS OVER A COMMUNICATION NETWORK AND FOR VERIFICATION AND MANAGEMENT OF INFORMATION RELATED THERETO - The system and method of the present invention provide integrated or embedded components, for electronic (or other) products, each operable to securely store and selectively provide access to, a unique ID (UID) previously assigned to its corresponding specific product, where the UID of each product is registered with one or more particular UID registration centers over at least one communication network, and associated with one or more data records stored in a corresponding database file at the particular UID registration center, the data records being inclusive of information related to the product, the product purchase history, current ownership, etc., and wherein one or more authorized parties may subsequently advantageously utilize at least one UID (and optionally a verifier) to access, verify, edit, transfer, transmit, and/or otherwise manage at least one information item related to the one or more corresponding registered products in their UID registration center database file. Also provided is an optimized process for verifiable transfer of ownership rights between a product's authorized owner and intended recipient, the transfer process being implemented over at least one communication network with graphical user interfaces provided for each party, where the transfer of ownership rights involves association of the product's UID with the receiving party's data record and confirming ownership transfer, and optional transfer of additional product-related information from the former product owner to the current recipient. | 06-04-2009 |
| 20090289774 | SECURE ELECTROMAGNETIC DATA STORAGE ELEMENT HAVING A PLURALITY OF SELECTIVELY DETERMINED SWITCHABLE SECURITY MODES - The apparatus of the present invention are directed to an selectively accessible electromagnetically resonant data storage element (implemented as a resonant tag, card, and/or embedded element), that is selectively responsive to predetermined electromagnetic interrogation thereof, that comprises a novel membrane switch component for enabling a user to selectively enable and/or disable interrogatory access to the resonant component, to protect from unauthorized interrogation thereof (hereinafter “MSRDS element”). The inventive MSRDS element comprises a top circuitry layer, a bottom circuitry layer, which includes a microchip, a plurality of contact pads and an antenna, an insulation spacer layer, a pressure layer retention component, and an optional EM/EMI shielding layer. The membrane switch may be formed through a combination of aligned and configured subcomponents of at least a portion of the element's layers. In one embodiment thereof, the pressure layer retention component may be advantageously utilized to maintain the membrane switch in a pressed down position to thereby enable the MSRDS element to function continuously (i.e., in an Always-ON security mode), until such time that the pressure layer retention component is removed. In this exemplary embodiment of the MSRDS element, for example used in conjunction with consumer products, when a consumer purchases a product that has been provided with the MSRDS element, they remove (e.g., peel off, etc.) the pressure layer retention component to change the element to an Always-OFF security mode, such that the MSRDS element is only accessible to electromagnetic interrogation thereof when the membrane switch is held down. Therefore, the MSRDS element of the present invention provides a greater level of data security advantageously balanced with convenience—it is freely accessible prior to acquisition thereof by a user, and is thereafter easily made secure by the user, who is provided with the capability of readily and selectively enabling access to the data stored therein. | 11-26-2009 |
| 20090303050 | SECURE ELECTROMAGNETIC DATA STORAGE ELEMENT HAVING A PLURALITY OF SELECTIVELY DETERMINED SWITCHEABLE SECURITY MODES - The apparatus of the present invention are directed to an selectively accessible electromagnetically resonant data storage element (implemented as a resonant tag, card, and/or embedded element), that is selectively responsive to predetermined electromagnetic interrogation thereof, that comprises a novel membrane switch component for enabling a user to selectively enable and/or disable interrogatory access to the resonant component, to protect from unauthorized interrogation thereof (hereinafter “MSRDS element”). The inventive MSRDS element comprises a top layer, a bottom circuitry layer, which includes a microchip, a plurality of contact pads and an antenna, an insulation spacer layer, a pressure layer retention component, and an optional EMI shielding layer. The membrane switch may be formed through a combination of aligned and configured subcomponents of at least a portion of the element's layers. In one embodiment thereof, the pressure layer retention component may be advantageously utilized to maintain the membrane switch in a pressed down position to thereby enable the MSRDS element to function continuously (i.e., in an Always-ON mode), until such time that the pressure layer retention component is removed. In this exemplary embodiment of the MSRDS device, for example used in conjunction with consumer products, when a consumer purchases a product that has been provided with the MSRDS element, they remove (e.g., peel off, etc.) the pressure layer retention component to change the element to an Always-OFF mode, such that the MSRDS element is only accessible to electromagnetic interrogation thereof, when the membrane switch is held down. Therefore, the MSRDS device of the present invention provides a greater level of data security advantageously balanced with convenience—it is freely accessible prior to acquisition thereof by a user, and is thereafter easily made secure by the user, who is provided with the capability of readily and selectively enabling access to the data stored therein. | 12-10-2009 |
| 20110147467 | ENHANCED PERFORMANCE AND SECURITY RFID DEVICE - The present invention is directed to a selectively accessible enhanced radio-frequency identification (RFID) device, that is enhanced performance and security by selectively responsive to predetermined electromagnetic interrogation thereof, that comprises an enhanced component for enabling a user to adjust readable distances and selectively enable or disable interrogatory access to the enhanced RFID device, to protect from unauthorized interrogation thereof. The inventive enhanced RFID device comprises an antenna, a microchip and at least one enhanced component. The enhanced component may use “Electromagnetic Induction” to the antenna to increase performance and “Electromagnetic Shield”, to cover the antenna. In one embodiment thereof, the enhanced RFID device may be advantageously utilizing retention component to keep closed it in an Always-OFF mode, such that the enhanced RFID device is only accessible to electromagnetic interrogation thereof, when the enhanced RFID device is open to an Always-ON mode. Therefore, the enhanced RFID device of the present invention provides an inventively user controllable, two functions in one of enhanced component, for enhanced performance and greater level of data security advantageously balanced with convenience—it is freely accessible prior to acquisition thereof by a user, and is thereafter easily made secure by the user, who is provided with the capability of readily and selectively enabling access to the data stored therein. | 06-23-2011 |