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Choi, Cheongju-Si
Bong Kyu Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20120080224 | Circuit board for signal transmission and method of manufacturing the same - Provided is a circuit board for signal transmission and a method of manufacturing the same. The circuit board for signal transmission includes a first insulating layer, a plurality of signal interconnection disposed on the first insulating layer, ground interconnections disposed on the first insulating layer at both sides of the plurality of signal interconnections, a second insulating layer disposed on the first insulating layer including the plurality of signal interconnections and ground interconnections, a first shield layer disposed on the second insulating layer, a first shield wall for electrically connecting the ground interconnections and the first shield layer and passing through the second insulating layer, a second shield layer disposed under the first insulating layer, and a second shield wall for electrically connecting the ground interconnections and the second shield layer and passing through the first insulating layer. | 04-05-2012 |
Hyung-Suk Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110115016 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end ;portion thereof extending over the isolation layer. | 05-19-2011 |
| 20110115020 | SEMICONDUCTOR DEVICE - A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface. | 05-19-2011 |
| 20110127612 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region. | 06-02-2011 |
Jung Bum Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100006821 | NANOSCALE MULTI-JUNCTION QUANTUM DOT DEVICE AND FABRICATION METHOD THEREOF - The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern. | 01-14-2010 |
| 20100157660 | MULTIPLE-VALUED DRAM - Provided herein is an MV DRAM device capable of storing multiple value levels using an SET device. The device includes one or more word lines; one or more bitlines; a DRAM cell connected to intersections of the word lines and the bitlines; a current source transistor having a source connected to a power supply voltage and a gate and a drain connected to the bitlines; an SET (single electron transistor) device having a gate connected to the bitlines and a source connected to the ground voltage; and a transistor connected between the bitlines and the drain of the SET device, wherein the gate of the transistor is connected to the ground voltage. According to the MV DRAM device of the present invention, since two or more multiple value data are stored in a cell, it is possible to increase the storage density of the device. In addition, since the MV DRAM device only needs to enable the word lines in order to rewrite the data, thereby requiring only a small amount of current flow, it is suitable for a low-power application. | 06-24-2010 |
| 20100327260 | Single Electron Transistor Operating at Room Temperature and Manufacturing Method for Same - The present invention relates to a single electron transistor operating at room temperature and a manufacturing method for same. More particularly, the present invention relates to a single electron transistor operating at room temperature, in which a quantum dot or a silicide quantum dot using a nanostructure is formed and a gate is positioned on the quantum dot so as to minimize influence on a tunneling barrier and achieve improved effectiveness in electric potential control for the quantum dot and operating efficiency of the transistor, and a manufacturing method for same. | 12-30-2010 |
| 20100330751 | Single Electron Transistor Operating at Room Temperature and Manufacturing Method for Same - The present invention relates to a single-electron transistor (SET) operating at room temperature and a method of manufacturing the same, and to be specific, to a single-electron transistor operating at room temperature and a method of manufacturing the same, which are capable of minimizing influence of the gate voltage on tunneling barriers and effectively controlling the electric potential of a quantum dot (QD), by forming the quantum dot using a trenched nano-wire structure and forming the gate to wrap most of the way around the quantum dot. | 12-30-2010 |
| 20110174620 | ULTRA HIGH SPEED AND HIGH SENSITIVITY DNA SEQUENCING SYSTEM AND METHOD FOR SAME - The present system relates to a system architecture that uses a single electron transistor (SET) to analyze base sequences of deoxyribonucleic acid (DNA) at ultra high speed in real time. DNA represents the entire body of genetic information and consists of nucleotide units. There are a total of four types of nucleotides, and each nucleotide consists of an identical pentose (deoxyribose), phosphate group, and one of four types of bases (Adenine: A, Guanine: G, Cytosine: C, Thymine: T). A and G are purines having a bicyclic structure while C and T are pyrimidines having a monocyclic structure. Each has a different atomic arrangement, which signifies a different charge distribution from one another. Therefore, a system comprising a single electron transistor that is very sensitive to charges, a probe of a very small size that reacts to one nucleotide very effectively, and an extended gate that connects the SET with the probe, can be used to analyze DNA base sequences at ultra high speed in real time. | 07-21-2011 |
Ki Soo Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20120104617 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed. A dummy pattern is formed between a fuse pattern and a semiconductor substrate so as to prevent the semiconductor substrate from being damaged, and a buffer pattern is formed between the dummy pattern and the semiconductor substrate, so that a dummy metal pattern primarily absorbs or reflects laser energy transferred to the semiconductor substrate during the blowing of the fuse pattern, and the buffer pattern secondarily reduces stress generated between the dummy pattern and the semiconductor substrate, resulting in the prevention of a defect such as a crack. | 05-03-2012 |
Kwon Seob Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090263921 | Thin film transistor substrate with color filter and method for fabricting the same - A color filter-on-thin film transistor substrate includes gate data lines crossing each other and defining pixel areas, thin film transistors is located at crossings of gate and data lines, pixel electrodes connected to the thin film transistors and formed within the pixel areas, and stripe-shaped color filters overlapping a plurality of pixel areas and oriented parallel to one of the gate and data lines. | 10-22-2009 |
Moon-Ok Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110131413 | APPARATUS AND METHOD FOR DYNAMIC UPDATE OF SOFTWARE-BASED IPTV CONDITIONAL ACCESS SYSTEM - The apparatus for dynamic update of a software-based IPTV conditional access system includes: a server master key manager managing a master key and encrypting a conditional access code ID; a conditional access server manager generating and managing a server list, linking and storing an update policy with the conditional access server IDs included in the server list, and controlling execution of the conditional access server; and a conditional access code download server generating an ID map of set of conditional access codes by combining the plurality of conditional access codes and the plurality of conditional access code IDs that are encrypted, and transmitting the ID map of set of conditional access codes and the conditional access code to a receiver. | 06-02-2011 |
| 20110131623 | SYSTEM FOR PROVIDING MOBILE CONTENTS USING SETTOP BOX ON IPTV NETWORK AND METHOD THEREOF - A settop box based on an IPTV according to an embodiment of the present invention includes: a home network interface communicating with one or more mobile terminals; a terminal profile manager acquiring and managing a terminal profile from a mobile terminal connected through the home network interface; a contents converter converting contents received from an external contents server through an external network to mobile contents suitable for the corresponding mobile terminal on the basis of the acquired terminal profile; a contents storage storing the contents converted by the contents converter; and a transmitting/receiving controller performing a processing operation to extract the mobile contents stored in the contents storage and transmit the extracted mobile contents to the mobile terminal through the home network interface in accordance with a request from a user. | 06-02-2011 |
| 20110145876 | APPARATUS FOR PURCHASE AND DELIVERY OF ENTITLEMENT, METHOD THEREOF, AND SETTOP BOX IN IPTV BROADCAST SYSTEM - Disclosed is an apparatus for purchase and delivery of entitlement in an IPTV broadcast system according to an embodiment of the present invention that includes: an entitlement purchase environment provider providing a charged broadcast contents list to the purchaser so that the purchaser can select delivery target contents and providing an IPTV broadcasting service subscriber list to the purchaser so that the purchaser can select one or more entitlement delivery target subscribers to which the entitlement for the delivery target contents is delivered; an entitlement generator receiving information on the delivery target contents from the entitlement purchase environment provider, and then generating the entitlement for corresponding broadcast contents; and an entitlement transmitter delivering the entitlement for the delivery target contents to IPTV settop boxes of the entitlement delivery target subscribers on the basis of information on the entitlement delivery target subscribers. | 06-16-2011 |
Seong Gon Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110149775 | SYSTEM AND METHOD FOR INTERWORKING BETWEEN MEDIA QUALITY ASSESSMENT AT TERMINAL DEVICE AND QOS CONTROL IN TRANSPORT NETWORK - Provided is a service quality of experience (QoE) predicting and managing system. The service QoE predicting and managing system may include a media quality measurement system (MQMS) to measure a QoE of media, and a quality of service (QoS)/QoE control system (QCS) to measure QoS parameter information, to predict the QoE based on the measured QoS information, to calculate a QoS parameter adjustment value by comparing and analyzing the QoE measured by the MQMS and the predicted QoE, and to transmit the calculated QoS parameter adjustment value to a service quality control system (SCS). | 06-23-2011 |
Yong Kyoo Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090317728 | Method for Fabricating Extreme Ultraviolet Lithography Mask - A method for fabricating an extreme ultraviolet (EUV) lithography mask comprises forming a reflecting layer, an absorber layer, and a resist layer over a substrate; defining a plurality of split regions by partially splitting the resist layer with regular spacing; performing an exposure process, wherein the exposure region is irradiated with an electron beam at different intensities on the split regions to generate a difference in electron beam doses implanted into the resist layer; forming a resist layer pattern which selectively exposes the absorber layer and has a slanted side wall profile by performing a development process to remove a portion of the resist layer, into which the electron beam doses are implanted; and forming an absorber layer pattern with a slanted side wall profile by sequentially etching the portion of the absorber layer exposed by the resist layer pattern. | 12-24-2009 |
Yong-Mo Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100062574 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME AND ELECTRO-LUMINESCENCE DISPLAY PANEL HAVING THE SAME - A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance. | 03-11-2010 |
Yongsu Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100209781 | LITHIUM SECONDARY BATTERY OF IMPROVED HIGH-TEMPERATURE CYCLE LIFE CHARACTERISTICS - Disclosed is a lithium secondary battery comprising a cathode including a lithium-containing transition metal oxide, an anode including a carbon-based material, and a non-aqueous electrolyte with addition of a compound of formula (1). Incorporation of the compound (1) into the electrolyte significantly improves the high-temperature performance and cycle life characteristics of the battery. | 08-19-2010 |
Young-Woo Choi, Cheongju-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110081587 | Apparatus for Detecting Leak in Fuel Cells - Provided is an apparatus for detecting leak in fuel cells. The apparatus includes: a detection gas intake unit connected to a detection gas storage; a supply unit supplying detection gas to supply manifolds of the fuel cells; a recovering unit connected to exhaust manifolds of the fuel cells; and a measuring unit measuring pressure of the detection gas supplied to the fuel cells, wherein in the fuel cells, a product and cooling fluid are exhausted through the exhaust manifolds after cathode/anode reaction gas and cooling fluid are supplied to the inside through the supply manifolds to generate an electrochemical reaction. Accordingly, presence of leak and leaked portions of the entire fuel cells are detected by using an inert detection gas. | 04-07-2011 |
| 20110236774 | System for Pre-Activation of Polymer Electrolyte Fuel Cell (PEFC) - An apparatus for pre-activation of a polymer electrolyte fuel cell includes a first plate and a second plate hot pressing the unit cell stack, each having a flow channel supplying water vapor to opposing inner surfaces with the unit cell stack therebetween and including a resistor producing heat, a compressor, a temperature controller and a water vapor supplier connected to the flow channels of the plates. The apparatus for pre-activating a polymer electrolyte fuel cell may be used to prepare a prep-activated integrated body of a polymer electrolyte fuel cell membrane electrode assembly and gas diffusion layers by performing hot pressing while supplying water vapor to the unit cell stack to hydrate the polymer electrolyte membrane. And the apparatus for pre-activating a polymer electrolyte fuel cell is used to monitor physical damage of the membrane electrode assembly based on the change of degree of vacuum at a fuel electrode side and an air electrode side using, thereby detecting the leaking membrane electrode assembly in advance. | 09-29-2011 |
| 20110271742 | Quality Control Apparatus for Gas Diffusion Layer for Fuel Cells - A quality control apparatus for a gas diffusion layer includes a support, at least one first pressure device, a plate provided below the first pressure device and supporting the pressure applied to the gas diffusion layer sample, a first controller controlling the compression of the first pressure device, a thickness gauge measuring the thickness of the gas diffusion layer sample, a flow channel formed in the sample compressing portion to discharge a gas to the gas diffusion layer sample, a gas supply controller, a gas supply source, a pressure gauge, two fixing devices, a third controller controlling the compression of the fixing devices, two second pressure, a second controller controlling the compression of the second pressure device, a stopper, a protrusion, and a load cell. | 11-10-2011 |