Patent application number | Description | Published |
20090234687 | METHOD OF DESIGNING AN OPTICAL METROLOGY SYSTEM OPTIMIZED FOR OPERATING TIME BUDGET - Provided is a method of designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to achieve a time budget for completing metrology process steps. The design of the optical metrology system is optimized by using collected operating data in comparison to the selected operating criteria. In one embodiment, the optical metrology system is used for stand alone systems. In another embodiment, the optical metrology system is integrated with fabrication clusters in semiconductor manufacturing. | 09-17-2009 |
20090240537 | APPARATUS FOR DESIGNING AN OPTICAL METROLOGY SYSTEM OPTIMIZED FOR OPERATING TIME BUDGET - Provided is an apparatus for designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to achieve a time budget for completing metrology process steps. The design of the optical metrology system is optimized by using collected operating data in comparison to the selected operating criteria. In one embodiment, the optical metrology system is used for stand alone systems. In another embodiment, the optical metrology system is integrated with fabrication clusters in semiconductor manufacturing. | 09-24-2009 |
20090244910 | METHOD AND SYSTEM FOR LAMP TEMPERATURE CONTROL IN OPTICAL METROLOGY - A method and system are provided for lamp temperature control for optical metrology. Precise control of the lamp temperature provides the improved signal-to-noise ratios required for accurately determining the profile of nanometer sized structures using optical metrology. | 10-01-2009 |
20090248339 | DESIGNING AN OPTICAL METROLOGY SYSTEM OPTIMIZED WITH SIGNAL CRITERIA - Provided is a method of designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collected signal data in comparison to the one or more signal criteria. In one embodiment, the optical metrology system is used for stand alone systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing. | 10-01-2009 |
20090248340 | APPARATUS FOR DESIGNING AN OPTICAL METROLOGY SYSTEM OPTIMIZED WITH SIGNAL CRITERIA - Provided is an apparatus for designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collected signal data in comparison to set one or more signal criteria. In one embodiment, the optical metrology system is used for stand alone systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing. | 10-01-2009 |
20090248341 | PROCESS CONTROL USING AN OPTICAL METROLOGY SYSTEM OPTIMIZED WITH SIGNAL CRITERIA - Provided is system and method for controlling a fabrication cluster using at least one parameter of a structure measured with an optical metrology system designed and configured to meet one or more signal criteria. The design of the optical metrology system is optimized by using collected signal data in comparison to set one or more signal criteria. In one embodiment, the optical metrology system is used for standalone systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing. At least one parameter determined from a signal measured using the optical metrology system is transmitted to a fabrication cluster. The at least one parameter is used to modify at least one process variable or equipment setting of the fabrication cluster. | 10-01-2009 |
20090319075 | AUTOMATED PROCESS CONTROL USING AN OPTICAL METROLOGY SYSTEM OPTIMIZED WITH DESIGN GOALS - Provided is a method of designing an optical metrology system for measuring structures on a workpiece wherein the optical metrology system is configured to meet a plurality of design goals. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set plurality of design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing. At least one parameter determined from a diffraction signal measured using the optical metrology system is transmitted to the fabrication cluster. The at least one parameter is used to modify at least one process variable or equipment setting of the fabrication cluster. | 12-24-2009 |
20090319214 | OPTICAL METROLOGY SYSTEM OPTIMIZED WITH DESIGN GOALS - Provided is a method of designing an optical metrology system for measuring structures on a workpiece where the optical metrology system is configured to meet two or more design goals. The design of the optical metrology system is optimized by using collected design goal data in comparison to the set two or more design goals. In one embodiment, the optical metrology system is used for stand alone metrology systems. In another embodiment, the optical metrology system is integrated with a fabrication cluster in semiconductor manufacturing. | 12-24-2009 |
20140024143 | SYSTEM FOR IN-SITU FILM STACK MEASUREMENT DURING ETCHING AND ETCH CONTROL METHOD - Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures. | 01-23-2014 |
20150078416 | DIFFERENTIAL ACOUSTIC TIME OF FLIGHT MEASUREMENT OF TEMPERATURE OF SEMICONDUCTOR SUBSTRATES - Disclosed is a method and apparatus for measuring semiconductor substrate temperature using a differential acoustic time of flight measurement technique. The measurement is based on measuring the time of flight of acoustic (ultrasonic) waves across the substrate, and calculating a substrate temperature from the measured time of flight and the known temperature dependence of the speed of sound for the substrate material. The differential acoustic time of flight method eliminates most sources of interference and error, for example due to varying coupling between an ultrasonic transducer and the substrate. To further increase the accuracy of the differential acoustic time of flight measurement, a correlation waveform processing algorithm is utilized to obtain a differential acoustic time of flight measurement from two measured ultrasonic waveforms. To facilitate signal recognition and processing, a symmetric Lamb mode may be used as mode of excitation of the substrate. | 03-19-2015 |