| Patent application number | Description | Published |
|---|
| 20100308323 | Method for improving light extraction efficiency of group-III nitride-based light emitting device - A method for improving light extraction efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based light emitting device having a top surface; disposing a seed layer on the top surface for increasing adhesion of the group-III nitride-based light emitting device; and forming a patterned oxide layer, having a plurality of nanostructure particles, without absorption of visible light on the seed layer. The size and shape of the nanostructure particles are controlled by reaction concentration, time and temperature during the patterned oxide layer formation, thereby improving light extraction efficiency of the group-III nitride-based light emitting device without damaging the group-III nitride-based light emitting device. | 12-09-2010 |
| 20110089398 | Method for improving internal quantum efficiency of Group-III nitride-based light emitting device - A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible light, size, shape, and density of the particles are controlled by reaction concentration ratio of nitrogen/hydrogen, reaction time and reaction temperature; and growing a group-III nitride-based layer over the oxide layer; wherein the oxide layer prevents threading dislocation of the group-III nitride-based substrate from propagating into the group-III nitride-based layer, thereby improving internal quantum efficiency of the group-III nitride-based light emitting device. | 04-21-2011 |
| 20110095314 | Light emitting device and method for enhancing light extraction thereof - A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N | 04-28-2011 |
| 20110127551 | Method for enhancing electrical injection efficiency and light extraction efficiency of light-emitting devices - A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N | 06-02-2011 |
| 20110143466 | METHOD OF FORMING VERTICAL STRUCTURE LIGHT EMITTING DIODE WITH HEAT EXHAUSTION STRUCTURE - The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer. | 06-16-2011 |
| 20110189802 | METHOD FOR ENHANCING LIGHT EXTRACTION EFFICIENCY OF LIGHT EMITTING DIODES - A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a first layer of a first conduction type, an active layer, and a second layer of a second conduction type opposite to the first conduction type; growing a number of protrusions on at least one layer selected from the first layer, the active layer, and the second layer of the light emitting diode to form a patterned oxide layer for protecting the light emitting diode from etch; controlling height of the protrusions to achieve a predetermined etching depth of the light emitting diode; dry etching through a portion of the light emitting diode which is not protected by the patterned oxide layer to form a plurality of depressions on the light emitting diode; and removing the oxide layer from the selected layer. The light emitting diode is patterned so that more light beams can be emitted. Therefore, light extraction efficiency is enhanced. | 08-04-2011 |
| 20110284892 | LIGHT EMITTING DIODE APPARATUS AND METHOD FOR ENHANCING LUMINOUS EFFICIENCY THEREOF - A light emitting diode apparatus with enhanced luminous efficiency is disclosed in the present invention. The light emitting diode apparatus includes a light emitting diode chip for providing a first light beam; a substrate, having a cross-section of a trapezoid, for supporting the light emitting diode chip, which is transparent to the first light beam; and an encapsulating body, containing a phosphor and encapsulating the light emitting diode chip and the substrate, for fixing the light emitting diode chip and the substrate and providing a second light beam when the phosphor is excited by the first light beam. Due to the shape of the substrate, contact area of the substrate with the phosphor is enlarged. Luminous efficiency is enhanced as well. | 11-24-2011 |
| 20120012856 | GaN Light Emitting Diode and Method for Increasing Light Extraction on GaN Light Emitting Diode Via Sapphire Shaping - A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes. | 01-19-2012 |
