Patent application number | Description | Published |
20080286898 | Material composition having core-shell microstructure used for varistor - A material composition having a core-shell microstructure suitable for manufacturing a varistor having outstanding electrical properties, the core-shell microstructure of the material composition at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure, and electrical properties of the varistors during low temperature of sintering process can be decided and designated by precisely controlling the size of the grain of the cored-structure and the thickness and insulation resistance of the insulating layer of the shelled-structure of material composition. | 11-20-2008 |
20100117271 | Process for producing zinc oxide varistor - A process for producing zinc oxide varistors is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintering material through two independent procedures, so that the doped zinc oxide and the high-impedance sintering material are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess one or more of varistor properties, thermistor properties, capacitor properties, inductor properties, piezoelectricity and magnetism. | 05-13-2010 |
20110276488 | METHOD OF CREDIT CARD TRANSACTION AUTHORIZATION USING VOIPOW TECHNIQUE - A method of credit card transaction authorization using VoIPoW phone is provided to efficiently and economically perform authorization by both recognizing a credit card and identifying a holder of the credit card, which key feature of the method is that the VoIPoW phone is independent of environmental barriers, time as well as space limitations and communication costs, and a real-time intercommunication between a card holder and a relevant card issuing bank through VoIPoW phone can be performed to effectively preclude credit card fraud. | 11-10-2011 |
20120057265 | ZINC-OXIDE SURGE ARRESTER FOR HIGH-TEMPERATURE OPERATION - A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO | 03-08-2012 |
20120135563 | PROCESS FOR PRODUCING MULTILAYER CHIP ZINC OXIDE VARISTOR CONTAINING PURE SILVER INTERNAL ELECTRODES AND FIRING AT ULTRALOW TEMPERATURE - A low-temperature firing process is available for cost saving to produce a multilayer chip ZnO varistor containing pure silver (Ag) formed as internal electrodes and calcined at ultralow firing temperature of 850-900° C., which process comprises:
| 05-31-2012 |
20120208040 | STRUCTURE OF MULTILAYER CERAMIC DEVICE - A multilayer ceramic device comprises a laminated ceramic body having opposite end surfaces, a pair of conductive electrodes each respectively attached to one end surface of the laminated ceramic body and a plurality of alternately staggered internal electrodes within the laminated ceramic body configured in an alternating manner and each electrically connected to the corresponding conductive electrodes respectively; each conductive electrodes of the multilayer ceramic device is further covered with a solder paste layer so that the multilayer ceramic device is thus made without any plating step and no need of treating waste liquid nickel or waste liquid tin as well as no problem of environmental pollution caused by plating solution, thereby lowering manufacturing costs and reducing processing time. | 08-16-2012 |
20130011963 | PROCESS FOR PRODUCING ZINC OXIDE VARISTOR - A process for producing zinc oxide varistors possessed a property of breakdown voltage (V1mA) ranging from 230 to 1,730 V/mm is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintered powder through two independent procedures, so that the doped zinc oxide and the high-impedance sintered powder are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess breakdown voltage ranging from 230 to 1,730 V/mm. | 01-10-2013 |
20130133183 | PROCESS FOR PRODUCING ZINC OXIDE VARISTOR HAVING HIGH POTENTIAL GRADIENT AND HIGH NON-LINEARITY COEFFICIENT - A process for producing zinc oxide varistor is disclosed to allow that one step of having zinc oxide grains doped with non-equivalent ions and sufficiently semiconductorized and the other one step of preparing sintered powders having property of high-impedance are prepared by two separate procedures respectively, resulted in that the zinc oxide varistor produced by the process features both a high potential gradient and a high non-linearity coefficient; and more particularly the disclosed process is suited for producing a specific zinc oxide varistor whose potential gradient ranges from 2,000 to 9000 V/mm as well as non-linearity coefficient (α) ranges from 21.5 to 55. | 05-30-2013 |