| Patent application number | Description | Published |
|---|
| 20080237144 | METHOD FOR REMOVING MICRO-BUBBLES AND/OR PARTICLES FROM LIQUID, LIQUID SUPPLY APPARATUS AND IMMERSION EXPOSURE APPARATUS - A liquid supply apparatus capable of removing micro-bubbles and particles is described, including a pipe, a laser provider and at least one micro-bubble/particle outlet. The laser provider provides a laser crossing the pipe, wherein the laser is provided in a manner such that a micro-bubble/particle blocking/repelling barrier is formed crossing the pipe blocking or repelling micro-bubbles, particles or both in the liquid in the pipe. The micro-bubble/particle outlet is disposed on the pipe between the barrier and the liquid inlet of the pipe, adjacent to the barrier for discharging micro-bubbles, particles or both. | 10-02-2008 |
| 20080237659 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device is provided. Devices are formed on a core region and a non-core region in a substrate. A strain process is performed to the device on the core region but is not performed to the device on the non-core region. | 10-02-2008 |
| 20080246061 | STRESS LAYER STRUCTURE - A stress layer structure disposed on a substrate including a device region and a non-device region is provided. The device region includes active regions and a non-active region. The stress layer structure has stress patterns, at least one partition line, and at least one dummy stress pattern. Each of the stress patterns is disposed on the substrate of each of the active regions, respectively. The partition line exposes a portion of the substrate and divides the two adjacent stress patterns. The dummy stress pattern is disposed on the substrate in the partition line. | 10-09-2008 |
| 20080296695 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor is provided. The semiconductor device includes a transistor, a first strain layer and a second strain layer on a substrate. The first strain layer is configured at the periphery of the transistor. The second strain layer covers the transistor and a region exposed by the first strain layer. The stress provided by the second strain layer is different from that by the first strain layer. | 12-04-2008 |
| 20090079083 | INTERCONNECT STRUCTURE AND FABRICATING METHOD OF THE SAME - A fabricating method of an interconnect structure is provided. A first dielectric layer is formed on a substrate for covering an air gap region and a non-air gap region. Next, interconnects are formed in the first dielectric layer on the air gap region and in the first dielectric layer on the non-air gap region. Then, a cap layer is formed on the first dielectric layer. Thereafter, on the air gap region, a portion of the cap layer and a portion of the first dielectric layer are removed for forming first openings, and thereby a portion of the first dielectric layer are left between the interconnects for forming support pillars. After that, a second dielectric layer is formed over the substrate for covering the cap layer and the first openings, so as to form an air gap in each of the first openings. | 03-26-2009 |
| 20090212368 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device including transistors and strain layers is provided. Each transistor includes a source region and a drain region on a substrate and a gate structure on a channel region between the source region and the drain region. Lengths of the channel regions of these transistors are the same, but at least one source or drain region has a width along a channel length direction and the width is different from widths of other source or drain regions. The strain layers include first and second strain layers embedded separately at two sides of each gate structure in the substrate. A first width of each first strain layer along the channel length direction is the same, and a second width of each second strain layer along the channel length direction is the same. | 08-27-2009 |
| 20100090749 | MULTI-FUNCTION CHIP - A multi-function chip including a circuit and at least one control circuit is provided. The circuit having multiple functions includes an interconnection. The interconnection has at least one resistance-variable segment. The control circuit is electronically connected to the resistance-variable segment. One of the functions is carried out by adjusting the resistance of the resistance-variable segment with the control circuit. | 04-15-2010 |
| 20110186750 | METHOD FOR REMOVING MICRO-BUBBLES AND/OR PARTICLES FROM LIQUID, LIQUID SUPPLY APPARATUS AND IMMERSION EXPOSURE APPARATUS - A liquid supply apparatus capable of removing micro-bubbles and particles is described, including a pipe, a laser provider and at least one micro-bubble/particle outlet. The laser provider provides a laser crossing the pipe, wherein the laser is provided in a manner such that a micro-bubble/particle blocking/repelling barrier is formed crossing the pipe blocking or repelling micro-bubbles, particles or both in the liquid in the pipe. The micro-bubble/particle outlet is disposed on the pipe between the barrier and the liquid inlet of the pipe, adjacent to the barrier for discharging micro-bubbles, particles or both. | 08-04-2011 |
| 20110186751 | METHOD FOR REMOVING MICRO-BUBBLES AND/OR PARTICLES FROM LIQUID, LIQUID SUPPLY APPARATUS AND IMMERSION EXPOSURE APPARATUS - A liquid supply apparatus capable of removing micro-bubbles and particles is described, including a pipe, a laser provider and at least one micro-bubble/particle outlet. The laser provider provides a laser crossing the pipe, wherein the laser is provided in a manner such that a micro-bubble/particle blocking/repelling barrier is formed crossing the pipe blocking or repelling micro-bubbles, particles or both in the liquid in the pipe. The micro-bubble/particle outlet is disposed on the pipe between the barrier and the liquid inlet of the pipe, adjacent to the barrier for discharging micro-bubbles, particles or both. | 08-04-2011 |
