| Patent application number | Description | Published |
|---|
| 20080239797 | INFORMATION RECORDING/REPRODUCING DEVICE - There is proposed a nonvolatile information recording/reproducing device with low power consumption and high thermal stability. The information recording/reproducing device according to an aspect of the present invention includes a recording layer, and mechanism for recording information by generating a phase change in the recording layer while applying a voltage to the recording layer. The recording layer is comprised one of a Wolframite structure and a Scheelite structure. | 10-02-2008 |
| 20100008209 | INFORMATION RECORDING/REPRODUCING DEVICE - An information recording/reproducing device according to an aspect of the present invention includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having one of a Wolframite structure and a Scheelite structure. | 01-14-2010 |
| 20100074001 | INFORMATION RECORDING/REPRODUCING DEVICE - The information recording/reproducing device includes a stacked structure which is comprised of an electrode layer and a recording layer, a buffer layer which contacts with the recording layer and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer is comprised of a complex compound having two cations, and one of the cations is a transition element having “d” orbit where electrons are incompletely filled. The recording layer is comprised of Cu | 03-25-2010 |
| 20100127235 | INFORMATION RECORDING/REPRODUCING DEVICE - An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is A | 05-27-2010 |
| 20100142091 | INFORMATION RECORDING/REPRODUCING DEVICE - An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is A | 06-10-2010 |
| 20100238703 | INFORMATION RECORDING/REPRODUCING DEVICE - An information recording/reproducing device includes a first electrode layer, a second electrode layer, a recording layer as a variable resistance between the first and second electrode layer, and a circuit which supplies a voltage to the recording layer to change a resistance of the recording layer. Each of the first and second electrode layers is comprised of IV or III-V semiconductor doped with p-type carrier or n-type carrier. | 09-23-2010 |
| 20100316831 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a resistive layer directly or indirectly added to a recording layer and having electric resistivity larger than electric resistivity in the low-resistance state of the recording layer. A first compound contained in the recording layer comprises a composite compound includes two or more kinds of cationic elements, at least one of the two or more kinds of cationic elements is a transition element having a d orbit filled incompletely with electrons, a shortest distance between cationic elements adjacent to each other is 0.32 nm or less. | 12-16-2010 |
| 20110031463 | RESISTANCE-CHANGE MEMORY - According to one embodiment, a resistance-change memory includes a variable resistance element having a laminated structure in which a first electrode, a resistance-change film and a second electrode are laminated, and set to a low-resistance state and a high-resistance state according to stored data, an insulating film provided on a side surface of the variable resistance element, and a fixed resistance element provided on a side surface of the insulating film, and includes a conductive film, the fixed resistance element being connected in parallel with the variable resistance element. | 02-10-2011 |
| 20110031467 | INFORMATION RECORDING AND REPRODUCING APPARATUS - An information recording and reproducing apparatus according to an embodiment has a memory cell including a recording layer operative to change in a reversible manner between a first state having a certain resistance value upon application of a voltage pulse and a second state having a resistance value higher than that of the first state. The recording layer includes a first compound layer represented by a composition formula of A | 02-10-2011 |
| 20110037046 | RESISTANCE-CHANGE MEMORY AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a resistance-change memory includes a laminated structure in which a lower electrode, an insulating film and an upper electrode are stacked, and a resistance-change film provided on a side surface of the laminated structure, and configured to store data in accordance with an electric resistance change. | 02-17-2011 |
| 20110062405 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a first layer, a second layer, and a recording layer between the first and second layers, which is capable of a transition between a first state of a low resistance and a second state of a high resistance by flowing a current between the first and second layers. A peripheral portion of the recording layer has a composition different from that of a center portion of the recording layer. The center portion includes two kinds of cation elements. And the center portion is different from the peripheral portion in a ratio of the two kinds of cation elements. | 03-17-2011 |
| 20110062407 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the first region is higher than that in the second region. | 03-17-2011 |
