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| 20100021825 | MASK PATTERN DATA CREATION METHOD AND MASK - A mask pattern data creation method includes: determining whether or not a spacing of adjacent assist pattern feature data is not more than a prescribed spacing, based on: initial position data indicating an initially set position of the assist pattern feature data determined based on an illumination condition; and initial size data indicating an initially set size of the assist pattern feature data satisfying a size condition to not optically form an image on the transfer destination; and moving at least one of the adjacent assist pattern feature data or reducing a size of the at least one to increase the spacing of the assist pattern feature data to exceed a prescribed spacing in the case where it is determined that the spacing of the assist pattern feature data is not more than the prescribed spacing. | 01-28-2010 |
| 20110086515 | MASK PATTERN VERIFICATION APPARATUS, MASK PATTERN VERIFICATION METHOD AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - In one embodiment, a mask pattern verification apparatus is disclosed. The mask pattern verification apparatus can include a library registration portion registered a clean circuit pattern, a memory portion saved a design circuit pattern, a verification circuit pattern, a verification mask pattern, and a verification wafer pattern, a mask verification portion performing mask verification to the verification mask pattern, a lithography verification portion performing lithography verification to the verification wafer pattern, and a CPU including a library registration circuit registering the clean circuit pattern to the library registration portion, a pattern matching circuit verifying the clean circuit pattern being set or not in the design circuit pattern, a verification pattern extraction circuit extracting the verification circuit pattern from the design circuit pattern, an OPC circuit performing OPC to the verification circuit pattern, a mask verification circuit controlling the mask verification portion, and a lithography verification circuit controlling the lithography verification portion. | 04-14-2011 |
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| 20090258503 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND COMPUTER READABLE MEDIUM FOR STORING PATTERN SIZE SETTING PROGRAM - A method of manufacturing a semiconductor device, which forms a pattern by performing pattern transformation steps multiple times, comprises setting finished pattern sizes for patterns to be formed in each consecutive two pattern transformation steps among the plurality of pattern transformation steps based on a possible total amount of in-plane size variation of the patterns to be formed in the consecutive two pattern transformation steps. | 10-15-2009 |
| 20100003819 | DESIGN LAYOUT DATA CREATING METHOD, COMPUTER PROGRAM PRODUCT, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A design layout data creating method includes creating design layout data of a semiconductor device such that patterns formed on a wafer when patterns corresponding to the design layout data are formed on the wafer have a pattern coverage ratio within a predetermined range in a wafer surface and total peripheral length of the patterns formed on the wafer when the patterns corresponding to the design layout are formed on the wafer is pattern peripheral length within a predetermined range. | 01-07-2010 |
| 20100035168 | PATTERN PREDICTING METHOD, RECORDING MEDIA AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A pattern predicting method according to one embodiment includes obtaining shape data of a target pattern from shape data of a second pattern to be formed by transferring a first pattern at predetermined process conditions by using a first neutral network, the target pattern being to be a target of the second pattern when the first pattern is transferred at the predetermined process conditions, so as to keep the transferred patterns within an acceptable range, the transferred patterns being formed by transferring the first pattern at process conditions changed from the predetermined process conditions and obtaining shape data of a new first pattern for forming the target pattern at the predetermined process conditions by using a second neutral network. | 02-11-2010 |
| 20100038795 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to an embodiment includes forming a first pattern having linear parts of a constant line width and a second pattern on a foundation layer, the second pattern including parts close to the linear parts of the first pattern and parts away from the linear parts of the first pattern and constituting closed loop shapes independently of the first pattern or in a state of being connected to the first pattern and carrying out a closed loop cut at the parts of the second pattern away from the linear parts of the first pattern. | 02-18-2010 |
| 20100241261 | PATTERN GENERATING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND COMPUTER PROGRAM PRODUCT - Pattern formation simulations are performed based on design layout data subjected to OPC processing with a plurality of process parameters set in process conditions. A worst condition of the process conditions is calculated based on risk points extracted from simulation results. The design layout data or the OPC processing is changed such that when a pattern is formed under the worst condition based on the changed design layout data or the changed OPC processing a number of the risk points or a risk degree of the risk points of the pattern is smaller than the simulation result. | 09-23-2010 |
| 20110065030 | MASK PATTERN DETERMINING METHOD, MASK MANUFACTURING METHOD, AND DEVICE MANUFACTURING METHOD - According to one embodiment, a mask pattern determining method includes a mask-pattern dimension variation amount of a first photomask is derived. Moreover, a correspondence relationship between a target dimension value of an on-substrate test pattern formed by using a second photomask and a dimension allowable variation amount of a mask pattern formed on the second photomask is derived. Then, it is determined whether pattern formation is possible with a pattern dimension that needs to be formed when performing the pattern formation on a substrate by using the first photomask based on the mask-pattern dimension variation amount and the correspondence relationship. | 03-17-2011 |
| 20110069531 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a nonvolatile semiconductor storage device includes a memory-cell forming step, a first wire forming step, and a second wire forming step. The memory-cell forming step is forming dummy memory cells arranged at a predetermined space apart from an end memory cell located at an end of a group of memory cells set in contact with the same first or second wire among the memory cells, the dummy memory cells having a laminated structure same as that of the memory cells and being set in contact with no second wire. | 03-24-2011 |
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| 20090155990 | MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE AND METHOD FOR CREATING A LAYOUT THEREOF - A method for manufacturing a semiconductor device of one embodiment of the present invention includes: forming an insulation layer to be processed over a substrate; forming a first sacrificial layer in a first area over the substrate, the first sacrificial layer being patterned to form in the first area a functioning wiring connected to an element; forming a second sacrificial layer in a second area over the substrate, the second sacrificial layer being patterned to form in the second area a dummy wiring; forming a third sacrificial layer at a side wall of the first sacrificial layer and forming a fourth sacrificial layer at a side wall of the second sacrificial layer, the third sacrificial layer and the fourth sacrificial layer being separated; forming a concavity by etching the insulation layer to be processed using the third sacrificial layer and the fourth sacrificial layer as a mask; and filling a conductive material in the concavity. | 06-18-2009 |
| 20090186424 | PATTERN GENERATION METHOD, COMPUTER-READABLE RECORDING MEDIUM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A pattern generation method includes: acquiring a first design constraint for first patterns to be formed on a process target film by a first process, the first design constraint using, as indices, a pattern width of an arbitrary one of the first patterns, and a space between the arbitrary pattern and a pattern adjacent to the arbitrary pattern; correcting the first design constraint in accordance with pattern conversion by the second process, and thereby acquiring a second design constraint for the second pattern which uses, as indices, two patterns on both sides of a predetermined pattern space of the second pattern; judging whether the design pattern fulfils the second design constraint; and changing the design pattern so as to correspond to a value allowed by the second design constraint when the design constraint is not fulfilled. | 07-23-2009 |
| 20100081265 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method including: forming a first film on a target film; forming resist patterns on the first film; processing the first film with the resist patterns to form first patterns including: periodic patterns; and aperiodic patterns; removing the resist patterns; forming a second film over the target film; processing the second film to form second side wall patterns on side walls of the first patterns; removing the periodic patterns; and processing the target film with the aperiodic patterns and the second side wall patterns, thereby forming a target patterns including: periodic target patterns; aperiodic target patterns; and dummy patterns arranged between the periodic target patterns and the aperiodic patterns and arranged periodically with the periodic target patterns. | 04-01-2010 |
| 20100314771 | SEMICONDUCTOR DEVICE INCLUDING AN IMPROVED LITHOGRAPHIC MARGIN - A semiconductor device includes first to third lines. The second line has a width equal to the first line. The second line is arranged with a space equal to the width from the first line, and partially has a gap. The third line is connected to one end of the first line and to a side of one end of the second line. | 12-16-2010 |
