Chih-Wei Lin
Chih-Wei Lin, Xinfeng Township TW
Patent application number | Description | Published |
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20110101527 | MECHANISMS FOR FORMING COPPER PILLAR BUMPS - The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper. | 05-05-2011 |
20110254151 | METHOD FOR FABRICATING BUMP STRUCTURE WITHOUT UBM UNDERCUT - A method for fabricating bump structure without UBM undercut uses an electroless Cu plating process to selectively form a Cu UBM layer on a Ti UBM layer within an opening of a photoresist layer. After stripping the photoresist layer, there is no need to perform a wet etching process on the Cu UBM layer, and thereby the UBM structure has a non-undercut profile. | 10-20-2011 |
20110260317 | CU PILLAR BUMP WITH ELECTROLYTIC METAL SIDEWALL PROTECTION - A copper pillar bump has a sidewall protection layer formed of an electrolytic metal layer. The electrolytic metal layer is an electrolytic nickel layer, an electrolytic gold layer, and electrolytic copper layer, or an electrolytic silver layer. | 10-27-2011 |
20110287628 | Activation Treatments in Plating Processes - A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature. | 11-24-2011 |
20120007228 | CONDUCTIVE PILLAR FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURE - An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer. | 01-12-2012 |
20120043654 | MECHANISMS FOR FORMING COPPER PILLAR BUMPS USING PATTERNED ANODES - The mechanisms of preparing bump structures described by using patterned anodes may simplify bump-making process, reduce manufacturing cost, and improve thickness uniformity within die and across the wafer. In addition, the mechanisms described above allow forming bumps with different heights to allow bumps to be integrated with elements on a substrate with different heights. Bumps with different heights expand the application of copper post bumps to enable further chip integration. | 02-23-2012 |
20120091574 | CONDUCTIVE PILLAR STRUCTURE - The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the passivation layer, wherein the conductive pillar comprises an upper portion substantially perpendicular to a surface of the substrate and a lower portion having tapered sidewalls. | 04-19-2012 |
20120178251 | METHOD OF FORMING METAL PILLAR - The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar. | 07-12-2012 |
20120267781 | MECHANISMS FOR FORMING COPPER PILLAR BUMPS USING PATTERNED ANODES - This disclosure relates to a bump structure on a substrate including a copper layer, wherein the copper layer fills an opening created in a dielectric layer and a polymer layer. The bump structure further includes an under-bump-metallurgy (UBM) layer lines the opening and the copper layer is deposited over the UBM layer. The bump structure further includes a surface of the copper layer facing away from the substrate is curved. This disclosure also relates to two bump structures with different heights on a substrate where a thickness of the first bump structure is different than a thickness of the second bump structure. This disclosure also relates to a semiconductor device including a bump structure. | 10-25-2012 |
20120299181 | Package-on-Package Process for Applying Molding Compound - A method of packaging includes placing a package component over a release film, wherein solder balls on a surface of the package component are in physical contact with the release film. Next, A molding compound filled between the release film and the package component is cured, wherein during the step of curing, the solder balls remain in physical contact with the release film. | 11-29-2012 |
20120322255 | Metal Bump Formation - A system and method for forming metal bumps is provided. An embodiment comprises attaching conductive material to a carrier medium and then contacting the conductive material to conductive regions of a substrate. Portions of the conductive material are then bonded to the conductive regions using a bonding process to form conductive caps on the conductive regions, and residual conductive material and the carrier medium are removed. A reflow process is used to reflow the conductive caps into conductive bumps. | 12-20-2012 |
20130009307 | Forming Wafer-Level Chip Scale Package Structures with Reduced number of Seed Layers - A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad exposed through the first opening. A seed layer is formed over the passivation layer and to electrically coupled to the metal pad. The seed layer further includes a portion over the passivation layer. A first mask is formed over the seed layer, wherein the first mask has a second opening directly over at least a portion of the metal pad. A PPI is formed over the seed layer and in the second opening. A second mask is formed over the first mask, with a third opening formed in the second mask. A portion of a metal bump is formed in the third opening. After the step of forming the portion of the metal bump, the first and the second masks are removed. | 01-10-2013 |
20130062761 | Packaging Methods and Structures for Semiconductor Devices - Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality of metal bumps is coupled to the second surface of the RDL. A molding compound is disposed over the at least one integrated circuit and the first surface of the RDL. | 03-14-2013 |
20130075921 | Forming Packages Having Polymer-Based Substrates - A method includes applying a polymer-comprising material over a carrier, and forming a via over the carrier. The via is located inside the polymer-comprising material, and substantially penetrates through the polymer-comprising material. A first redistribution line is formed on a first side of the polymer-comprising material. A second redistribution line is formed on a second side of the polymer-comprising material opposite to the first side. The first redistribution line is electrically coupled to the second redistribution line through the via. | 03-28-2013 |
20130089952 | Packaging Process Tools and Packaging Methods for Semiconductor Devices - Packaging process tools and packaging methods for semiconductor devices are disclosed. In one embodiment, a packaging process tool for semiconductor devices includes a mechanical structure including a frame. The frame includes a plurality of apertures adapted to retain a plurality of integrated circuit dies therein. The frame includes at least one hollow region. | 04-11-2013 |
20130093078 | Process for Forming Package-on-Package Structures - A device includes an inter-layer dielectric, a device die under the inter-layer dielectric; and a die-attach film under the inter-layer dielectric and over the device die, wherein the die-attach film is attached to the device die. A plurality of redistribution lines includes portions level with the die-attach film. A plurality of Z-interconnects is electronically coupled to the device die and the plurality of redistribution lines. A polymer-comprising material is under the inter-layer dielectric. The device die, the die-attach film, and the plurality of Z-interconnects are disposed in the polymer-comprising material. | 04-18-2013 |
20130093097 | Package-On-Package (PoP) Structure and Method - A package-on-package (PoP) structure comprises a first package and a second package. The first package comprises a first die, a second die, and a core material. The core material has a first surface and a second surface. A first redistribution layer (RDL) is on the first surface, and a second RDL is on the second surface. The first die is disposed in the core material between the first surface and the second surface. The second die is coupled to one of the first RDL and the second RDL. The second package comprises a third die and an interposer. The interposer has a first side and a second side. The third die is coupled to the second side of the interposer. The first package is coupled to the second package by first electrical connectors coupled to the second side of the interposer and the first RDL. | 04-18-2013 |
20130095611 | Packaging Methods for Semiconductor Devices - Packaging methods for semiconductor devices are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a workpiece including a plurality of packaging substrates. A portion of the workpiece is removed between the plurality of packaging substrates. A die is attached to each of the plurality of packaging substrates. | 04-18-2013 |
20130099370 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a workpiece with a conductive trace and a chip with a conductive pillar. The chip is attached to the workpiece and a solder joint region is formed between the conductive pillar and the conductive trace. The distance between the conductive pillar and the conductive trace is less than or equal to about 16 μm. | 04-25-2013 |
20130113116 | Contact and Method of Formation - A system and method for forming contacts is provided. An embodiment comprises forming the contacts on a substrate and then coining the contacts by physically shaping them using, e.g., a molding chamber. The physical shaping of the contacts may be performed using a patterned portion of the molding chamber or else by placing a patterned stencil around the contacts prior before a force is applied to physically reshape the contacts. The contacts may be reshaped into a cylindrical, oval, cuboid, or rectangular shape, for example. | 05-09-2013 |
20130119539 | Package Structures and Methods for Forming the Same - A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A solder region is disposed in the polymer region and electrically coupled to the redistribution line. The solder region includes a second flat top surface not higher than the first flat top surface. | 05-16-2013 |
20130122652 | Methods for Performing Reflow in Bonding Processes - A method includes placing a cover over a lower package component, wherein the cover comprises an opening aligned to the lower package component. An upper package component is placed over the lower package component. The upper package component is aligned to the opening, and a solder region is dispose between the upper package component and the lower package component. The cover and the upper package component are exposed to a radiation to reflow the solder region. | 05-16-2013 |
20130143361 | Packaging Process Tools and Systems, and Packaging Methods for Semiconductor Devices - Packaging process tools and systems, and packaging methods for semiconductor devices are disclosed. In one embodiment, a packaging process tool for semiconductor devices includes a mechanical structure for supporting package substrates or integrated circuit die during a packaging process for the integrated circuit die. The mechanical structure includes a low thermal conductivity material disposed thereon. | 06-06-2013 |
20130181338 | Package on Package Interconnect Structure - A structure comprises a post passivation interconnect layer formed over a semiconductor substrate, a metal bump formed over the post passivation interconnect layer and a molding compound layer formed over the semiconductor substrate. A lower portion of the metal bump is embedded in the molding compound layer and a middle portion of the metal bump is surrounded by a concave meniscus molding compound protection layer. | 07-18-2013 |
20130234317 | Packaging Methods and Packaged Semiconductor Devices - Packaging methods and packaged semiconductor devices are disclosed. In one embodiment, a packaging method includes providing a first die, partially packaging the first die, and forming a plurality of solder balls on a surface of the partially packaged first die. An epoxy flux is disposed over the plurality of solder balls. A second die is provided, and the second die is partially packaged. The plurality of solder balls is coupled to the partially packaged second die. | 09-12-2013 |
20130285238 | STUD BUMP STRUCTURE FOR SEMICONDUCTOR PACKAGE ASSEMBLIES - A semiconductor package structure comprises a substrate, a die bonded to the substrate, and one or more stud bump structures connecting the die to the substrate, wherein each of the stud bump structures having a stud bump and a solder ball encapsulating the stud bump to enhance thermal dissipation and reduce high stress concentrations in the semiconductor package structure. | 10-31-2013 |
20130295762 | CU PILLAR BUMP WITH ELECTROLYTIC METAL SIDEWALL PROTECTION - A method of forming a bump structure includes providing a semiconductor substrate and forming an under-bump-metallurgy (UBM) layer on the semiconductor substrate. The method further includes forming a mask layer on the UBM layer, wherein the mask layer has an opening exposing a portion of the UBM layer. The method further includes forming a copper layer in the opening of the mask layer and removing a portion of the mask layer to form a space between the copper layer and the mask layer. The method further includes performing an electrolytic process to fill the space with a metal layer and removing the mask layer. | 11-07-2013 |
20130307140 | PACKAGING WITH INTERPOSER FRAME - The mechanisms of using an interposer frame to package a semiconductor die enables fan-out structures and reduces form factor for the packaged semiconductor die. The mechanisms involve using a molding compound to attach the semiconductor die to the interposer frame and forming a redistribution layer on one or both sides of the semiconductor die. The redistribution layer(s) in the package enables fan-out connections and formation of external connection structures. Conductive columns in the interposer frame assist in thermal management. | 11-21-2013 |
20130309621 | METHOD AND APPARATUS FOR ADJUSTING WAFER WARPAGE - A method for adjusting the warpage of a wafer, includes providing a wafer having a center portion and edge portions and providing a holding table having a holding area thereon for holding the wafer. The wafer is placed onto the holding table with the center portion higher than the edge portions and thereafter pressed onto the holding area such that the wafer is attracted to and held onto the holding table by self-suction force. The wafer is heated at a predetermined temperature and for a predetermined time in accordance with an amount of warpage of the wafer in order to achieve a substantially flat wafer or a predetermined wafer level. | 11-21-2013 |
20130334710 | Contact and Method of Formation - A system and method for forming contacts is provided. An embodiment comprises forming the contacts on a substrate and then coining the contacts by physically shaping them using, e.g., a molding chamber. The physical shaping of the contacts may be performed using a patterned portion of the molding chamber or else by placing a patterned stencil around the contacts prior before a force is applied to physically reshape the contacts. The contacts may be reshaped into a cylindrical, oval, cuboid, or rectangular shape, for example. | 12-19-2013 |
20140008786 | BUMP-ON-TRACE PACKAGING STRUCTURE AND METHOD FOR FORMING THE SAME - A device comprises a first package component, and a first metal trace and a second metal trace on a top surface of the first package component. The device further includes a dielectric mask layer covering the top surface of the first package component, the first metal trace and the second metal trace, wherein the dielectric mask layer has an opening therein exposing the first metal trace. The device also includes a second package component and an interconnect formed on the second package component, the interconnect having a metal bump and a solder bump formed on the metal bump, wherein the solder bump contacts the first metal trace in the opening of the dielectric mask layer. | 01-09-2014 |
20140231988 | Packaging Methods and Packaged Semiconductor Devices - Packaging methods and packaged semiconductor devices are disclosed. In one embodiment, a packaging method includes providing a first die, partially packaging the first die, and forming a plurality of solder balls on a surface of the partially packaged first die. An epoxy flux is disposed over the plurality of solder balls. A second die is provided, and the second die is partially packaged. The plurality of solder balls is coupled to the partially packaged second die. | 08-21-2014 |
20140264840 | Package-on-Package Structure - A device comprises a top package mounted on a bottom package, wherein the bottom package comprises a plurality of interconnection components and the bottom package comprises a plurality of first bumps formed on a first side of the bottom package, a semiconductor die is bonded on a second side of the bottom package, wherein the semiconductor die is electrically coupled to the first bumps through the interconnection components and the semiconductor die is located between the top package and the bottom package, and an underfill layer formed between the top package and the bottom package. | 09-18-2014 |
20140264842 | Package-on-Package Structure and Method of Forming Same - A device comprises a bottom package comprising interconnect structures, first bumps on a first side and metal bumps on a second side, a semiconductor die bonded on the bottom package, wherein the semiconductor die is electrically coupled to the first bumps through the interconnect structures. The device further comprises a top package bonded on the second side of the bottom package, wherein the top package comprises second bumps, and wherein each second bump and a corresponding metal bump form a joint structure between the top package and the bottom package and an underfill layer formed between the top package and the bottom package, wherein the metal bumps are embedded in the underfill layer. | 09-18-2014 |
20140264856 | Package-on-Package Structures and Methods for Forming the Same - A package includes a package component, which further includes a top surface and a metal pad at the top surface of the package component. The package further includes a non-reflowable electrical connector over and bonded to the metal pad, and a molding material over the package component. The non-reflowable electrical connector is molded in the molding material and in contact with the molding material. The non-reflowable electrical connector has a top surface lower than a top surface of the molding compound. | 09-18-2014 |
20140264930 | Fan-Out Interconnect Structure and Method for Forming Same - A method embodiment includes forming a sacrificial film layer over a top surface of a die, the die having a contact pad at the top surface. The die is attached to a carrier, and a molding compound is formed over the die and the sacrificial film layer. The molding compound extends along sidewalls of the die. The sacrificial film layer is exposed. The contact pad is exposed by removing at least a portion of the sacrificial film layer. A first polymer layer is formed over the die, and a redistribution layer (RDL) is formed over the die and electrically connects to the contact pad. | 09-18-2014 |
20140374922 | Alignment in the Packaging of Integrated Circuits - A method includes aligning a top package to a bottom package using an alignment mark in the bottom package, and placing the top package over the bottom package, wherein the top package is aligned to the bottom package after the placing the top package over the bottom package. A reflow is then performed to bond the top package to the bottom package. | 12-25-2014 |
20150228632 | Packaged Semiconductor Devices and Methods of Packaging Semiconductor Devices - Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die. | 08-13-2015 |
Chih-Wei Lin, Hsin-Chu TW
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20100044732 | Light Emitting Diode Structure and Method of Forming the Same - A light emitting diode structure and a light emitting diode structure forming method are provided. The light emitting diode structure includes a base, a diode chip, and a package lens. The diode chip is mounted on the base. The package lens covers the diode chip. The surface of the package lens includes a plurality of dot structures. The steps of the method include mounting a light-emitting diode chip on a base, assembling a package lens to cover the light emitting diodes chip, and forming a plurality of dot structures on the surface of the package lens. | 02-25-2010 |
20110033787 | FRAME CELL FOR SHOT LAYOUT FLEXIBILITY - A method includes receiving an integrated circuit chip size and determining a frame structure segment size based on the chip size. The frame structure segment size is less than the chip size. An initial shot layout having a chip count is established in which a number of shots, each including at least one frame structure segment and at least one chip, are arranged in vertically and horizontally aligned columns and rows. At least one additional shot layout is established in which at least one of a row or column of shots is offset from an adjacent row or column of shots. The initial shot layout is compared to the at least one additional shot layout, and a final shot layout is selected based in part on the total number of shots in the shot layout and has a final chip count that is greater than or equal to the initial chip count. | 02-10-2011 |
Chih-Wei Lin, Taoyuan City TW
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20100270604 | Non-Volatile Memories and Methods of Fabrication Thereof - Non-volatile memories and methods of fabrication thereof are described. In one embodiment, a method of fabricating a semiconductor device includes forming an oxide layer over a semiconductor substrate, and exposing the oxide layer to a first nitridation step to form a first nitrogen rich region. The first nitrogen rich region is disposed adjacent an interface between the oxide layer and the semiconductor substrate. After the first nitridation step, the oxide layer is exposed to a second nitridation step to form a second nitrogen rich region. A first gate electrode is formed on the oxide layer, wherein the second nitrogen rich region is disposed adjacent an interface between the oxide layer and the first gate electrode. | 10-28-2010 |
20130307045 | Non-Volatile Memories and Methods of Fabrication Thereof - Non-volatile memories and methods of fabrication thereof are described. In one embodiment, a method of fabricating a semiconductor device includes forming an oxide layer over a semiconductor substrate, and exposing the oxide layer to a first nitridation step to form a first nitrogen rich region. The first nitrogen rich region is disposed adjacent an interface between the oxide layer and the semiconductor substrate. After the first nitridation step, the oxide layer is exposed to a second nitridation step to form a second nitrogen rich region. A first gate electrode is formed on the oxide layer, wherein the second nitrogen rich region is disposed adjacent an interface between the oxide layer and the first gate electrode. | 11-21-2013 |
Chih-Wei Lin, Taipei County TW
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20080200041 | STORAGE DEVICE - The present disclosure relates to a storage device. The storage device comprises a frame having a hole and a printed circuit board embedded in the frame, wherein the printed circuit board has an extended part for forming a connector. The connector may pass through the hole and is exposed out the frame for interfacing the storage device with a host device. At least one memory device is mounted to the printed circuit board and electrically connected to the printed circuit board. | 08-21-2008 |
20100109855 | SOUNDER CONTROL CIRCUIT, SOUNDER SYSTEM AND METHOD FOR VEHICLE - A sounder control circuit is applicable to for a vehicle with a plurality of sounders, in which each sounder is used for generating a sound signal toward a different direction respectively. The sounder control circuit includes a switch module, a control module and a driving module. The switch module has a plurality of switches, and outputs an operation signal to the control module according to a status of each of the switches. Thus, the control module outputs a control signal to the driving module according to the operation signal for driving at least one of the sounders to output the sound signal. | 05-06-2010 |
Chih-Wei Lin, Hsinchu City TW
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20100098292 | Image Detecting Method and System Thereof - An image detecting method and a system thereof are provided. The image detecting method includes the following steps. An original image is captured. A moving-object image of the original image is created. An edge-straight-line image of the original image is created, wherein the edge-straight-line image comprises a plurality of edge-straight-lines. Whether the original image has a mechanical moving-object image is detected according to the length, the parallelism and the gap of the part of the edge-straight-lines corresponding to the moving-object image. | 04-22-2010 |
20120181669 | FRAME CELL FOR SHOT LAYOUT FLEXIBILITY - A method includes establishing an initial shot layout in which a number of shots are arranged in vertically aligned columns and horizontally aligned rows to cover a semiconductor wafer. At least one of a row of shots or a column of shots is shifted relative to an adjacent row or column of shots to establish at least one additional shot layout that differs from the initial shot layout in that shots in the at least one shifted row or column of shots are not aligned with the shots in the adjacent row or column of shots with which they were aligned in the initial shot layout. One of the initial shot layout and the at least one additional shot layout is selected as a final shot layout. The wafer is exposed to light using the final shot layout. | 07-19-2012 |
20130309612 | ENHANCED SCANNER THROUGHPUT SYSTEM AND METHOD - A method and system to improve scanner throughput is provided. An image from a reticle is projected onto a substrate using a continuous linear scanning procedure in which an entire column of die or cells of die is scanned continuously, i.e. without stepping to a different location. Each scan includes translating a substrate with respect to a fixed beam. While the substrate is translated, the reticle is also translated. When a first die or cell of die is projected onto the substrate, the reticle translates along a direction opposite the scan direction and as the scan continues along the same direction, the reticle then translates in the opposite direction of the substrate thereby forming an inverted pattern on the next die or cell. The time associated with exposing the substrate is minimized as the stepping operation only occurs after a complete column of cells is scanned. | 11-21-2013 |
Chih-Wei Lin, Taipei TW
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20090295357 | VARIABLE-FREQUENCY AND MULTI-PHASE VOLTAGE REGULATOR MODULE AND CONTROL METHOD OF THE SAME - A control method of a variable-frequency and multi-phase voltage regulator module is provided. The variable-frequency and multi-phase voltage regulator module is connected to a central processing unit and embedded on a motherboard for providing a central-processing-unit current. The control method includes steps of: detecting an intensity of a central-processing-unit current of the central processing unit; providing a power to the central processing unit via M number of phases based on a first switching frequency if the intensity of the central-processing-unit current is greater than a reference-current value; and providing a power to the central processing unit via N number of phases based on a second switching frequency if the intensity of the central-processing-unit current is less than the reference-current value. | 12-03-2009 |
20090327770 | POWER SUPPLY SYSTEM AND POWER SUPPLYING CONTROL METHOD - A power supply system adopting two power supplies connected in parallel includes a first power supply comprising a first voltage-output terminal; a second power supply comprising a second voltage-output terminal; a first switch circuit comprising an input terminal connected to the first voltage-output terminal; a second switch circuit comprising an input terminal connected to the second voltage-output terminal; and a plug comprising a first pin connected to both an output terminal of the first switch circuit and an output terminal of the second switch circuit; wherein the voltage outputted from the first voltage-output terminal is equal to the voltage outputted from the second voltage-output terminal. | 12-31-2009 |
20090327771 | POWER SUPPLY SYSTEM AND POWER SUPPLYING CONTROL METHOD - A power supplying control method of a computer system for use with a first power supply and a second power supply both providing a first specific voltage to a motherboard, including steps of: detecting whether the first power supply and the second power supply, outputting the first specific voltage, are at a stable state; outputting the first specific voltage to a first pin when the first power supply is at the stable state; outputting the first specific voltage to the first pin when the second power supply is at the stable state; and outputting the first specific voltage to the motherboard via the first pin. | 12-31-2009 |
20110115447 | MULTIPHASE POWER SUPPLY DEVICE AND CURRENT ADJUSTING METHOD THEREOF - A multiphase power supply device and a current adjusting method thereof are provided in the application. The multiphase power supply device outputs power sources and currents with different phases to a microprocessor, and a detection module detects present temperature values of each phase power source to adjust currents of each phase power source to achieve thermal balance. The multiphase power supply device further can automatically measure the power efficiency and display results including the detected temperature values of each phase power source and the power efficiency on a screen, and thus the user can know the operation efficiency of the power supply device conveniently. | 05-19-2011 |
Chih-Wei Lin, Chu-Nan TW
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20090097249 | LIGHT EMITTING DIODE BASED LIGHT SOURCE ASSEMBLY - An LED based light source assembly ( | 04-16-2009 |
Chih-Wei Lin, Gueiren Township TW
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20080229574 | Self chip redistribution apparatus and method for the same - The present invention provides an apparatus and a method for self chip redistribution. The apparatus of the present invention comprises a glass base on which a trench and a cavity formed by a layer of photo resistance. Chips are picked from a sawed wafer and placed on the glass base and moved by fluid flow to the front of index bar. The glass base and the index bar vibrate with low frequency to fill chips into chip cavities. The present invention further provides a method for self chip redistribution, comprising providing a self redistribution tool, transferring redistributed chips onto a panel forming tool, forming a chip panel and separating said chip panel from panel forming tool. | 09-25-2008 |
20080248614 | WAFER LEVEL PACKAGE WITH GOOD CTE PERFORMANCE - The present invention provides a structure of package comprising a substrate with a pre-formed die receiving cavity formed and/or terminal contact metal pads formed within an upper surface of the substrate. A die is disposed within the die receiving cavity by adhesion and a dielectric layer formed on the die and the substrate. At least one re-distribution built up layer (RDL) is formed on the dielectric layer and coupled to the die via contact pad. Connecting structure, for example, UBM is formed over the re-distribution built up layer. Terminal Conductive bumps are coupled to the UBM. | 10-09-2008 |
Chih-Wei Lin, Tainan County TW
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20080237834 | CHIP PACKAGING STRUCTURE AND CHIP PACKAGING PROCESS - A chip packaging structure comprising a chip, a plurality of conductive pillars surrounding the chip, an encapsulation encapsulating the chip and the conductive pillars, and a connecting layer is provided. The encapsulation has a first side and a second side corresponding to the first side. The connecting layer is disposed at the first side of the encapsulation and electrically connected between the chip and the conductive pillars. Furthermore, a chip packaging process accompanying the chip packaging structure is also provided. The chip packaging structure is more useful and powerful and is suitable for various chip packaging applications, and the chip packaging process can reduce the manufacturing time and save the production cost. | 10-02-2008 |
Chih-Wei Lin, Tainan Hsien TW
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20080197260 | COMPUTER HOUSING - A computer housing includes: a housing body; a first supporting plate mounted in the housing body; a second supporting plate mounted in the housing body and cooperating with the first supporting plate to define a mounting space therebetween; and an operating lever pivoted to the second supporting plate, formed with an engaging tongue, and rotatable relative to the second supporting plate between a first angular position, in which the engaging tongue extends into the mounting space for retaining a box-like device in the mounting space, and a second angular position, in which the engaging tongue is disposed outside of the mounting space for permitting removal of the box-like device. | 08-21-2008 |
Chih-Wei Lin, Taichung City TW
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20110128481 | DISPLAY DEVICE AND METHOD OF MEASURING SURFACE STRUCTURE THEREOF - A display device and a method of measuring a surface structure of the same are provided. The display device includes first and second substrates, first and second patterned light-shielding layers, and first and second pixel units. The first patterned light-shielding layer disposed on a surface of the first substrate includes first openings. The second patterned light-shielding layer disposed on the surface of the first substrate in the first patterned light-shielding layer includes second openings. The first pixel unit includes first and second protrusions. The first protrusion correspondingly covers the first openings and a portion of the first patterned light-shielding layer. The second protrusion is disposed in the first and second patterned light-shielding layers. The second pixel unit includes a third protrusion correspondingly covering the second openings and a portion of the second patterned light-shielding layer, wherein sizes of the second openings are smaller than sizes of the first openings. | 06-02-2011 |
20120105776 | LIQUID CRYSTAL DISPLAY PANEL AND METHOD FOR FORMING LIQUID CRYSTAL LAYER THEREOF - A liquid crystal display panel includes a transistor array substrate, a color filter substrate, a liquid crystal layer, and a sealant material. The transistor array substrate includes a transparent substrate, a transistor array, and a plurality of peripheral wires. The transparent substrate has a display region and a non-display region, and the non-display region is located beside the display region. The transistor array is disposed in the display region. The peripheral wires are disposed in the non-display region and electrically connected with the transistor array. A transmittance of the non-display region is less than 30%. The liquid crystal layer is disposed between the color filter substrate and the transistor array substrate. The sealant material is disposed in the non-display region and connected between the color filter substrate and the transistor array substrate. The sealant material surrounds the liquid crystal layer. | 05-03-2012 |
20120105789 | DISPLAY SUBSTRATE HAVING APERIODICALLY ARRANGED SPACERS - A display substrate includes a plate and a plurality of spacers. The plate has a plate surface, and the plate surface is divided into a central region and a peripheral region, wherein the peripheral region surrounds the central region. The spacers are disposed on the plate surface in an aperiodic arrangement manner. A number of the spacers located in the central region is M, and a number of the spacers located in the peripheral region is N. An area of the central region is X, and an area of the peripheral region is Y. X, Y, M, and N satisfy the following mathematical expression: | 05-03-2012 |
20140049785 | METHOD OF MEASURING SURFACE STRUCTURE OF DISPLAY DEVICE - A method of measuring a surface structure of a display device is provided. The display device includes first and second substrates, first and second patterned light-shielding layers, and first and second pixel units. The first patterned light-shielding layer disposed on a surface of the first substrate includes first openings. The second patterned light-shielding layer disposed on the surface of the first substrate includes second openings. The first pixel unit includes first and second protrusions. The first protrusion correspondingly covers the first openings and a portion of the first patterned light-shielding layer. The second protrusion is disposed on and directly contacted with the first and second patterned light-shielding layers. The second pixel unit includes a third protrusion correspondingly covering the second openings and a portion of the second patterned light-shielding layer, wherein sizes of the second openings are smaller than sizes of the first openings. | 02-20-2014 |
Chih-Wei Lin, Hsinchu County TW
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20130279126 | AROMATIC POLYIMIDE FILM, MANUFACTURING METHOD AND APPLICATION THEREOF - An aromatic polyimide film can be formed from a plurality of monomers comprising an aromatic dianhydride, and a first aromatic diamine selected from a group consisting of formulae (I) and (II): | 10-24-2013 |
20140050935 | POLYIMIDE FILM INCORPORATING POLYIMIDE POWDER DELUSTRANT, AND MANUFACTURE THEREOF - A polyimide film includes a polyimide layer including a polyimide base polymer, and a polyimide powder distributed in the polyimide base polymer, the polyimide powder being obtained by reacting a diamine with a dianhydride at a molar ratio of about 1:0.950 to about 1:0.995. Moreover, the polyimide film may have a multilayered structure including at least a second polyimide layer stacked on a surface of the polyimide layer. The second polyimide can also include the polyimide powder at a weight ratio less than about 20 wt % of the total weight of the second polyimide layer. Embodiments described herein also include methods of preparing the polyimide films. | 02-20-2014 |
20140273499 | Method and Apparatus for Localized and Controlled Removal of Material from a Substrate - A method and a system that include providing a localized dispensing apparatus. A substrate having a material disposed on its top surface is oriented above the localized dispensing apparatus. A chemical is then dispensed from the localized dispensing apparatus onto the top surface of the oriented substrate. The chemical removes the material. The path for the material removal may be determined and the localized dispensing apparatus programmed to provide chemical according to the path. | 09-18-2014 |
20150061115 | INTERCONNECT STRUCTURE AND MANUFACTURING METHOD THEREOF - A conductive interconnect structure includes a contact pad; a conductive body connected to the contact pad at a first end; and a conductive layer positioned on a second end of the conductive body. The conductive body has a longitudinal direction perpendicular to a surface of the contact pad. The conductive body has an average grain size (a) on a cross sectional plane (Plane A) whose normal is perpendicular to the longitudinal direction of the conductive body. The conductive layer has an average grain size (b) on Plane A. The conductive body and the conductive layer are composed of same material, and the average grain size (a) is greater than the average grain size (b). | 03-05-2015 |
20150061162 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a semiconductor structure includes several operations. The several operations include placing a plurality of dies on a carrier; defining a first zone and a second zone in a top surface of the carrier; calculating a first coverage ratio in the first zone; calculating a second coverage ratio in the second zone; disposing a dummy block on a specified location of the top surface of the carrier if the difference between the first coverage ratio and the second coverage ratio is greater than a predetermined value; forming a molding compound on the carrier. | 03-05-2015 |
Chih-Wei Lin, Xinpu Township TW
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20140220335 | POLYIMIDE FILM INCORPORATIN COLORED POLYIMIDE MATTING POWER AND MANUFACTURE THEREOF - A colored matting powder includes particles containing a polyimide obtained by reacting diamine and dianhydride monomers at a substantially equal molar ratio, and a pigment incorporated with the polyimide, a portion of the pigment being located at an outer surface of the particles. Moreover, a colored polyimide film is also described as incorporating the colored matting powder, and can exhibit low gloss, low transparency and good insulation. | 08-07-2014 |
Chih-Wei Lin, Sinfeng Township TW
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20140239507 | Peripheral Electrical Connection of Package on Package - Various embodiments of mechanisms for forming a die package using through sidewall vias (TsVs), which are formed by sawing through substrate via (TSV) in half, at edges of dies described enable various semiconductor dies and passive components be electrically connected to achieve targeted electrical performance. Redistribution structures with redistribution layers (RDLs) are used along with the TsVs to enable the electrical connections. Since the TsVs are away from the device regions, the device regions do not suffer from the stress caused by the TSV formation. In addition, electrical connections between upper and lower dies by the TsVs increases the efficiency of the area utilization of the die package. | 08-28-2014 |
Chih-Wei Lin, Vernon Hills, IL US
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20140274934 | METHODS FOR TREATING HCV - The present invention features interferon-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 12 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents and ribavirin to a subject with HCV infection, wherein the treatment lasts for 12 weeks and does not include administration of interferon, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof. | 09-18-2014 |
20140275099 | METHODS FOR TREATING HCV - The present invention features interferon- and ribavirin-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 12 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents without interferon and ribavirin to a subject with HCV infection, wherein the treatment lasts for 12 weeks, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof. | 09-18-2014 |
20150283198 | Methods for Treating HCV - The present invention features interferon-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 12 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents to a subject with HCV infection, wherein the treatment lasts for 12 weeks and does not include administration of either interferon or ribavirin, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof. | 10-08-2015 |
20150283199 | Methods for Treating HCV - The present invention features interferon-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 12 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents and ribavirin to a subject with HCV infection, wherein the treatment lasts for 12 weeks and does not include administration of interferon, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof. | 10-08-2015 |
Chih-Wei Lin, Taoyuan Shien TW
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20140293523 | SERVER RACK AND ITS SERVER DEVICE - A server rack and its server device are provided. The server device includes a chassis, a motherboard module, a power-supply module, a storage array module, and a plurality of input/output interface elements. The chassis is provided with a containing space, a first opening and a second opening in which the first opening and the second opening are located at two opposite ends of the containing space. The power-supply module and the motherboard module are both disposed in the containing space and are pluggable independently, are both capable of plugging in and out from the chassis via the first opening, and are electrically connected to each other. The input/output interface elements are fixed on the motherboard module, and all of them are disposed at the first opening. The storage array module is disposed in the containing space and is slidable. | 10-02-2014 |
Chih-Wei Lin, Zhubei City TW
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20140331462 | Packaging Process Tools and Packaging Methods for Semiconductor Devices - Packaging process tools and packaging methods for semiconductor devices are disclosed. In one embodiment, a packaging process tool for semiconductor devices includes a mechanical structure including a frame. The frame includes a plurality of apertures adapted to retain a plurality of integrated circuit dies therein. The frame includes at least one hollow region. | 11-13-2014 |
20150044819 | Packaging Methods and Structures for Semiconductor Devices - Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality of metal bumps is coupled to the second surface of the RDL. A molding compound is disposed over the at least one integrated circuit and the first surface of the RDL. | 02-12-2015 |
20150179624 | Process for Forming Package-on-Package Structures - A device includes an inter-layer dielectric, a device die under the inter-layer dielectric; and a die-attach film under the inter-layer dielectric and over the device die, wherein the die-attach film is attached to the device die. A plurality of redistribution lines includes portions level with the die-attach film. A plurality of Z-interconnects is electronically coupled to the device die and the plurality of redistribution lines. A polymer-comprising material is under the inter-layer dielectric. The device die, the die-attach film, and the plurality of Z-interconnects are disposed in the polymer-comprising material. | 06-25-2015 |
20150348957 | Process for Forming Package-on-Package Structures - A device includes an inter-layer dielectric, a device die under the inter-layer dielectric; and a die-attach film under the inter-layer dielectric and over the device die, wherein the die-attach film is attached to the device die. A plurality of redistribution lines includes portions level with the die-attach film. A plurality of Z-interconnects is electronically coupled to the device die and the plurality of redistribution lines. A polymer-comprising material is under the inter-layer dielectric. The device die, the die-attach film, and the plurality of Z-interconnects are disposed in the polymer-comprising material. | 12-03-2015 |
20150357320 | Method of Forming Package-On-Package (PoP) Structure - A package-on-package (PoP) structure comprises a first package and a second package. The first package comprises a first die, a second die, and a core material. The core material has a first surface and a second surface. A first redistribution layer (RDL) is on the first surface, and a second RDL is on the second surface. The first die is disposed in the core material between the first surface and the second surface. The second die is coupled to one of the first RDL and the second RDL. The second package comprises a third die and an interposer. The interposer has a first side and a second side. The third die is coupled to the second side of the interposer. The first package is coupled to the second package by first electrical connectors coupled to the second side of the interposer and the first RDL. | 12-10-2015 |
20160035663 | Semiconductor Package System and Method - A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die. | 02-04-2016 |
20160035667 | Methods of Packaging Semiconductor Devices and Packaged Semiconductor Devices - Methods of packaging semiconductor devices and packaged semiconductor devices are disclosed. In some embodiments, a method of packaging a semiconductor device includes providing a protective film, coupling dies to the protective film, and disposing a molding material around the dies. The protective film includes a substantially opaque material at predetermined wavelengths of light. | 02-04-2016 |
Chih-Wei Lin, Hsinchu Hsien TW
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20150018484 | POLYIMIDE FILM AND FABRICATION METHOD THEREOF - A polyimide film includes a polyimide polymer forming a main molecular structure of the polyimide film, and polyimide particles present in the polyimide film at a weight ratio between about 15 wt % and 30 wt % of a total weight of the polyimide film, the polyimide particles having an average diameter between about 3 μm and 8 μm. The polyimide film can have a 60° gloss value equal to or smaller than 10, a haze equal to or higher than 90%, and a Young's modulus equal to or higher than 280 kgf/mm | 01-15-2015 |
20150072158 | BLACK POLYIMIDE FILM AND PROCESSING METHOD THEREOF - A black polyimide film includes a polyimide polymer formed by reaction of diamine monomers with dianhydride monomers, and a carbon black having an oxygen-to-carbon weight ratio higher than 11%. The black polyimide film can prevent flaking of carbon black when it is subject to an etching process, and exhibit desirable characteristics of extension rate and insulation. | 03-12-2015 |
20150159043 | MULTILAYERED POLYIMIDE FILM HAVING A LOW DIELECTRIC CONSTANT, LAMINATE STRUCTURE INCLUDING THE SAME AND MANUFACTURE THEREOF - A multilayered polyimide film includes a first polyimide layer containing fluorine-containing polymer particles and having a first surface and a second surface, and a second polyimide layer and a third polyimide layer respectively disposed on the first surface and the second surface. The second and the third polyimide layers contain organic silicon oxygen compound particles. The multilayered polyimide film has a coefficient of thermal expansion (CTE) between about 13 and about 30 ppm/° C. | 06-11-2015 |
20150307709 | POLYIMIDE FILM HAVING A LOW DIELECTRIC CONSTANT AND A LOW GLOSS, AND METHOD OF FABRICATING THE SAME - A polyimide film includes a polyimide, a carbon black present in a quantity between about 0.5 wt % and about 5 wt %, and a fluorine-containing polymer present in a quantity between about 15 wt % and about 40 wt %. The polyimide film can be a single-layer film or a multi-layer film, and has a low dielectric constant and low gloss. | 10-29-2015 |
Chih-Wei Lin, New Taipei City TW
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20150038622 | STABILIZER AND COMPOSITION INCLUDING THE SAME - A stabilizer including a first component, a second component, and a third component is provided. The first component is a compound represented by formula (1), | 02-05-2015 |
20150141557 | STABILIZER AND COMPOSITION INCLUDING THE SAME - A stabilizer including a first component and a second component. The first component is a compound represented by the formula (1). | 05-21-2015 |
Chih-Wei Lin, Keelung TW
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20150344551 | COMPOSITIONS AND METHODS FOR TREATMENT AND DETECTION OF CANCERS - Pharmaceutical composition comprising antibodies or antigen binding fragments thereof that bind to SSEA-4 are disclosed herein, as well as methods of use thereof. Methods of use include, without limitation, cancer therapies and diagnostics. The antibodies of the disclosure can bind to certain cancer cell surfaces. Exemplary targets of the antibodies disclosed herein can include carcinomas, such as those in brain, lung, breast, mouse, esophagus, stomach, liver, bile duct, pancreas, colon, kidney, cervix, ovary, and/or prostate cancer. | 12-03-2015 |
Chih-Wei Lin, Tao Yuan Shien TW
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20160042768 | HORZONTAL COUPLING OF VERTICALLY-ORIENTED HARD DRIVE - An apparatus adapted to house a component oriented in a first direction used for facilitating insertion and removal of the component in a second direction to/from a chassis, the first direction orthogonal to the second direction. The apparatus can be a caddy with an attached pivoting handle. Pivoting the handle in the first direction down towards the caddy causes the hard drive to slide in the second direction to couple with a hard drive coupling on the chassis. In some implementations, the caddy houses a hard drive in a vertical orientation, such that multiple hard drives can be coupled side-by-side to each other. In some implementations, the caddy is removably attached to the chassis. The chassis can comprise a rail, and the handle can comprise a hook. The hook attaches to the rail forming a removable attachment that allows for easy removal and insertion of the caddy. | 02-11-2016 |