| Patent application number | Description | Published |
|---|
| 20080225192 | Pixel Structure of LCD and Fabrication Method Thereof - Five photomasks are used in fabricating the pixel structure of an LCD. In this pixel structure, a metal light-shielding layer is formed under the thin film transistor to reduce photocurrent. Furthermore, a metal conductive wire is used to increase the storage capacity of the storage capacitor. | 09-18-2008 |
| 20080284341 | PHOTO DETECTOR AND METHOD FOR FORMING THEREOF - A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes. | 11-20-2008 |
| 20080296574 | Pixel Structure of LCD and Fabrication Method Thereof - In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transistor to decrease photo-leakage-current. | 12-04-2008 |
| 20080296581 | Pixel structure and method for forming the same - A pixel structure including at least one thin-film transistor, at least one storage capacitor, a patterned first metal layer, an interlayer dielectric layer, a passivation layer, and a patterned pixel electrode is provided. The storage capacitor is electrically connected to the thin-film transistor. The patterned first metal layer is covered by the interlayer dielectric layer. The thin-film transistor and the interlayer dielectric layer are covered by the passivation layer, wherein an opening is formed in the passivation layer and a part of the interlayer dielectric layer. The patterned pixel electrode is formed on a part of the passivation layer and a part of the interlayer dielectric layer and contacted with a part of the passivation layer and a part of the interlayer dielectric layer. The storage capacitor includes the patterned first metal layer, a remained part of the interlayer dielectric layer located under the opening, and the patterned pixel electrode. | 12-04-2008 |
| 20080316416 | LIQUID CRYSTAL DISPLAY AND METHOD FOR MAKING THE SAME - An LCD device has an LCD panel having a peripheral region, a heating layer disposed on the LCD panel, and two first flexible printed circuits (FPCs) electrically connected to the heating layer, and adapted to transmit voltage to the heating layer so that the heating layer can generate heat. At least one of the FPCs has a wide portion and a narrow portion being fixed in the peripheral region of the LCD panel and being connected to the heating layer. | 12-25-2008 |
| 20090050906 | Photo Detector and a Display Panel having the Same - A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed. | 02-26-2009 |
| 20090101915 | PHOTO SENSOR AND FABRICATION METHOD THEREOF - A photo sensor includes a patterned shielding conductive layer disposed on a transparent substrate, and a buffer dielectric layer, a patterned semiconductor layer, and a dielectric layer disposed on the patterned shielding layer in order. The patterned semiconductor layer includes an intrinsic region, a first doped region, and a second doped region, wherein the first and second doped regions are positioned at two sides of the intrinsic region separately. A patterned transparent conductive layer is disposed on the dielectric layer and covers the boundary of the intrinsic region and the first doped region and the boundary of the intrinsic region and the second doped region. The patterned transparent conductive layer is electrically connected to the patterned shielding conductive layer. | 04-23-2009 |
| 20090302330 | PHOTO DETECTOR AND METHOD FOR FORMING THEREOF - A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes. | 12-10-2009 |
| 20100012944 | THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME - A thin film transistor (TFT) formed on a transparent substrate is provided. The thin film transistor includes a patterned semiconductor layer, a gate insulating layer disposed on the patterned semiconductor layer, a gate electrode disposed on the gate insulating layer, and a patterned light-absorbing layer. The patterned semiconductor layer includes a channel region, and a source region and a drain region disposed on two opposite sides of the channel region in the pattern semiconductor layer. The patterned light-absorbing layer is disposed between the transparent substrate and the patterned semiconductor layer. | 01-21-2010 |
| 20100013001 | METHOD FOR MANUFACTURING NON-VOLATILE MEMORY AND STRUCTURE THEREOF - A method for manufacturing a non-volatile memory and a structure thereof are provided. The manufacturing method comprises the following steps. Firstly, a substrate is provided. Next, a semiconductor layer is formed on the substrate. Then, a Si-rich dielectric layer is formed on the semiconductor layer. After that, a plurality of silicon nanocrystals is formed in the Si-rich dielectric layer by a laser annealing process to form a charge-storing dielectric layer. Last, a gate electrode is formed on the charge-storing dielectric layer. | 01-21-2010 |
| 20100182559 | LIQUID CRYSTAL DISPLAY HAVING HEATING LAYER AND METHOD OF MAKING THE SAME - An LCD includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a bridge electrode formed in the first opening, a passivation layer covering the switching device and the capacitor, a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device, a second substrate having a common electrode disposed on the first substrate, and a liquid crystal layer. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings respectively exposing the contact pads and the bridge electrode, wherein the bridge electrode is electrically disconnected from the contact pads. | 07-22-2010 |
| 20100285618 | Pixel Structure of LCD and Fabrication Method Thereof - In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transistor to decrease photo-leakage-current. | 11-11-2010 |
| 20110164195 | DISPLAY DEVICE HAVING HEATING LAYER AND METHOD OF MAKING THE SAME - A display device includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a passivation layer covering the switching device and the capacitor, and a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings exposing the contact pads. | 07-07-2011 |
| 20110165727 | METHOD OF FABRICATING PHOTO SENSOR - A method of fabricating a photo sensor includes the following steps. First, a substrate is provided, having a conductive layer, a buffer dielectric layer, a patterned semiconductor layer, a dielectric layer, and a planarization layer disposed thereon from bottom to top, wherein the patterned semiconductor layer comprises a first doped region, an intrinsic region, and a second doped region disposed in order. Then, the planarization layer is patterned to form an opening in the planarization layer to expose a portion of the dielectric layer, wherein the opening is positioned on the intrinsic region and portions of the first and the second doped regions. Thereafter, at least a patterned transparent conductive layer is formed in the opening, covering the boundary of the intrinsic region and the first doped region and the boundary of the intrinsic region and the second doped region. | 07-07-2011 |
