| Patent application number | Description | Published |
|---|
| 20080203395 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and a method for manufacturing the same are provided. First, a transparent substrate is provided. Next, a light-shielding layer is formed over the transparent substrate and a first buffer layer is formed to cover the light-shielding layer. A semiconductor layer is formed over the first buffer layer. Then, the light-shielding layer, the first buffer layer and the semiconductor layer are patterned to form a laminate pattern. A channel and a source/drain region at two sides of the channel are formed within the semiconductor layer. Then, a gate insulating layer is formed over the transparent substrate to cover the laminate pattern. A gate electrode is formed on the gate insulating layer above the channel. | 08-28-2008 |
| 20090009675 | Photovoltaic Cells of Si-Nanocrystals with Multi-Band Gap and Applications in a Low Temperature Polycrystalline Silicon Thin Film Transistor Panel - One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon. | 01-08-2009 |
| 20090283772 | PHOTO SENSITIVE UNIT AND PIXEL STRUCTURE AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME - A pixel structure suitable for being disposed on a substrate is provided. The pixel structure includes a display unit and a photo sensitive unit. The display unit includes an active device and a pixel electrode. The active device is disposed on the substrate, and the pixel electrode is electrically connected to the active device. The photo sensitive unit includes a photocurrent readout unit, a shielding electrode, a photosensitive dielectric layer, and a transparent electrode. The shielding electrode is electrically connected to the photocurrent readout unit, and the photosensitive dielectric layer is disposed on the shielding electrode. The transparent electrode is disposed on the photosensitive dielectric layer that is interposed between the shielding electrode and the transparent electrode. | 11-19-2009 |
| 20090289920 | OPTICAL REFLECTED TOUCH PANEL AND PIXELS AND SYSTEM THEREOF - An optical reflective touch panel and pixels and a system thereof are provided. Each pixel of the optical reflective touch panel includes a display circuit and a sensing circuit. The display circuit controls the display of the pixel. The sensing circuit is coupled to the display circuit for sensing a sensitization state of the pixel during a turned-on period and a turned-off period of a backlight module and outputting a digital signal to notify an optical reflective touch panel system that whether the pixel is touched or not. | 11-26-2009 |
| 20110045622 | FABRICATING METHOD OF LIGHT EMITTING DIODE CHIP - In a fabricating method of an LED, a first-type doped semiconductor material layer, a light emitting material layer, and a second-type doped semiconductor material layer are sequentially formed on a substrate. The first-type and second-type doped semiconductor material layers and the light emitting material layer are patterned to form a first-type doped semiconductor layer, an active layer, and a second-type doped semiconductor layer. The active layer is disposed on a portion of the first-type doped semiconductor layer. The second-type doped semiconductor layer is disposed on the active layer and has a first top surface. A wall structure is formed on the first-type doped semiconductor layer that is not covered by the active layer, and the wall structure surrounds the active layer and has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Electrodes are formed on the first-type and second-type doped semiconductor layers. | 02-24-2011 |
| 20110159612 | Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode. | 06-30-2011 |
| 20110159613 | Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode. | 06-30-2011 |
| 20110159614 | Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode. | 06-30-2011 |
| 20110159623 | Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode. | 06-30-2011 |
| 20110165705 | Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode. | 07-07-2011 |
| 20110165706 | Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing - A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode. | 07-07-2011 |
