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Chih-Sheng Chang
Chih-Sheng Chang, Hsin-Chu TW
| Patent application number | Description | Published |
|---|---|---|
| 20080248623 | Method for forming high-drain-voltage tolerance MOSFET transistor in a CMOS process flow with double well dose approach - A method for forming a high-voltage drain metal-oxide-semiconductor (HVD-MOS) device includes providing a semiconductor substrate; forming a well region of a first conductivity type; and forming an embedded well region in the semiconductor substrate and only on a drain side of the HVD-MOS device, wherein the embedded region is of a second conductivity type opposite the first conductivity type. The step of forming the embedded well region includes simultaneously doping the embedded well region and a well region of a core regular MOS device, and simultaneously doping the embedded well region and a well region of an I/O regular MOS device, wherein the core and I/O regular MOS devices are of the first conductivity type. The method further includes forming a gate stack extending from over the embedded well region to over the well region. | 10-09-2008 |
| 20090315074 | Process for Fabricating Silicon-on-Nothing MOSFETs - A semiconductor device includes a gate stack; an air-gap under the gate stack; a semiconductor layer vertically between the gate stack and the air-gap; and a first dielectric layer underlying and adjoining the semiconductor layer. The first dielectric layer is exposed to the air-gap. | 12-24-2009 |
| 20100213575 | Profile Design for Lateral-Vertical Bipolar Junction Transistor - A lateral-vertical bipolar junction transistor (LVBJT) includes a well region of a first conductivity type over a substrate; a first dielectric over the well region; and a first electrode over the first dielectric. A collector of a second conductivity type opposite the first conductivity type is in the well region and on a first side of the first electrode, and is adjacent the first electrode. An emitter of the second conductivity type is in the well region and on a second side of the first electrode, and is adjacent the first electrode, wherein the second side is opposite the first side. A collector extension region having a lower impurity concentration than the collector adjoins the collector and faces the emitter. The LVBJT does not have any emitter extension region facing the collector and adjoining the emitter. | 08-26-2010 |
| 20110068407 | Germanium FinFETs with Metal Gates and Stressors - An integrated circuit structure includes an n-type fin field effect transistor (FinFET) and a p-type FinFET. The n-type FinFET includes a first germanium fin over a substrate; a first gate dielectric on a top surface and sidewalls of the first germanium fin; and a first gate electrode on the first gate dielectric. The p-type FinFET includes a second germanium fin over the substrate; a second gate dielectric on a top surface and sidewalls of the second germanium fin; and a second gate electrode on the second gate dielectric. The first gate electrode and the second gate electrode are formed of a same material having a work function close to an intrinsic energy level of germanium. | 03-24-2011 |
Chih-Sheng Chang, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20100072553 | METAL GATE STRESS FILM FOR MOBILITY ENHANCEMENT IN FinFET DEVICE - A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film. | 03-25-2010 |
| 20110049613 | ACCUMULATION TYPE FINFET, CIRCUITS AND FABRICATION METHOD THEREOF - A FinFET includes a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have the first type dopant. The channel includes a Ge, SiGe, or III-V semiconductor. A gate dielectric layer is located over the channel and a gate is located over the gate dielectric layer. | 03-03-2011 |
Chih-Sheng Chang, Miao-Li TW
| Patent application number | Description | Published |
|---|---|---|
| 20090243987 | Liquid crystal display device having look up table for adjusting common voltages and driving method thereof - A liquid crystal display (LCD) device includes an LCD panel, and a common voltage generating circuit configured for providing common voltages to the LCD panel. The common voltage generating circuit includes a microprocessor, a timer, a voltage adjustment circuit, and a look up table. The microprocessor is electrically connected to the timer, the look up table, and the voltage adjustment circuit. The timer is configured for recording a continuous operated time of the LCD panel. The look up table is configured for storing optimal common voltages corresponding to each continuous operated time. The microprocessor is configured for reading the optimal common voltage at set intervals corresponding to the continuous operated time, and controlling the voltage adjustment circuit to provide the corresponding optimal common voltage to the LCD panel. | 10-01-2009 |
| 20100020271 | Liquid crystal display panel - A liquid crystal display (LCD) panel includes a first substrate, a second substrate opposite to the first substrate, and a liquid crystal layer sandwiched between the first and second substrates. The first substrate includes a first wide view film and the second substrate includes a second wide view film. Angles of the first wide film, second wide film, and twist angles of liquid crystal molecules of the liquid crystal layer are defined. | 01-28-2010 |
Chih-Sheng Chang, Madou Town TW
| Patent application number | Description | Published |
|---|---|---|
| 20100007387 | TRIANGULAR WAVE GENERATING CIRCUIT HAVING SYNCHRONIZATION WITH EXTERNAL CLOCK - A triangular wave generating circuit includes: an integrating unit including a capacitor, the integrating unit having an output for providing a triangular wave signal; first and second constant current sources for charging and discharging the capacitor; a switch unit for coupling the first and second current sources to the integrating unit to charge and discharge the capacitor in response to an internal clock signal; a high/low level limiter including first and second comparing units for comparing the output of the integrating unit with upper and lower triangular wave peak limit reference voltages, respectively, and providing output signals indicating when the output of the integrating unit coincides with the peak limit reference voltages; a clock generator for providing the internal clock signal in response to the comparing unit output signals; and means for varying a peak-to-peak swing of the triangular wave signal over time to synchronize the internal clock signal with an externally supplied clock pulse. | 01-14-2010 |