Chih-Nan

Chih-Nan Cheng, I-Lan Hsien TW

Patent application number	Description	Published
20090020812	METAL-OXIDE-SEMICONDUCTOR DEVICE - A MOS device includes a semiconductor substrate having a first conductive type, a source region, a gate structure, and a drain region having a second conductive type. The gate structure is formed on the semiconductor substrate and substantially parallel to a first direction. The source region and the drain region are both disposed in the semiconductor substrate, and on two opposite sides of the gate structure. The source region includes at least a source doped region having the second conductive type, and at least a source contact region having the first conductive type, and the source doped region and the source contact region are alternately arranged along the first direction.	01-22-2009

Patent application number	Description	Published
20080203057	WET CLEANING PROCESS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO	08-28-2008

Patent application number	Description	Published
20110080534	LIGHT COMPENSATION SCHEME, OPTICAL MACHINE DEVICE, DISPLAY SYSTEM AND METHOD FOR LIGHT COMPENSATION - A light compensation scheme, an optical machine device, a display system and a method for light compensation are disclosed herein. The light compensation scheme includes a detector for inspecting a data related to a luminous flux of each of different color beams, and a controller for selectively adjusting anytime a luminosity of at least one of a plurality of pointolites and/or the transmittances of at least one part of liquid crystals disposed within a liquid crystal display panel, based on the inspected data.	04-07-2011