| Patent application number | Description | Published |
|---|
| 20080263501 | System, Method, and Computer-Readable Medium for Performing Data Preparation for a Mask Design - A method, computer-readable medium, and system for performing data preparation are provided. An integrated circuit design is received, and a plurality of pre-optical proximity correction processes are invoked such that the plurality of pre-optical proximity correction processes are performed in parallel. An optical proximity correction process is invoked in response to a determination that each of the plurality of pre-optical proximity correction processes have completed. A post-optical proximity correction process is invoked in response to a determination that the optical proximity correction process has completed | 10-23-2008 |
| 20090232384 | Mask Making Decision for Manufacturing (DFM) on Mask Quality Control - The present disclosure provide a method for making a mask. The method includes assigning a plurality of pattern features to different data types; writing the plurality of pattern features on a mask; inspecting the plurality of pattern features with different inspection sensitivities according to assigned data types; and repairing the plurality of pattern features on the mask according to the inspecting of the plurality of pattern features. | 09-17-2009 |
| 20110091797 | SUPERIMPOSE PHOTOMASK AND METHOD OF PATTERNING - Provided is a photomask that includes a substrate having a first region and a second region, a first pattern disposed in the first region of the substrate, and a second pattern disposed in the second region of the substrate. The first and second patterns are a decomposition of a design pattern to be transferred onto a wafer in a lithography process. | 04-21-2011 |
| 20110159410 | COST-EFFECTIVE METHOD FOR EXTREME ULTRAVIOLET (EUV) MASK PRODUCTION - The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping. | 06-30-2011 |
| 20110161893 | LITHOGRAPHIC PLANE CHECK FOR MASK PROCESSING - The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired. | 06-30-2011 |
| 20110318863 | PHOTOVOLTAIC DEVICE MANUFACTURE - A photovoltaic device manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell using nanoimprint technology to define individual cell units of the photovoltaic device. The methods can include providing a substrate; forming a first conductive layer over the substrate; forming first grooves in the first conductive layer using a nanoimprint and etching process; forming an absorption layer over the first conductive layer, the absorption layer filling in the first grooves; forming second grooves in the absorption layer using a nanoimprint process; forming a second conductive layer over the absorption layer, the second conductive layer filling in the second grooves; and forming third grooves in the second conductive layer and the absorption layer, thereby defining a photovoltaic cell unit. | 12-29-2011 |
| 20120003780 | PHOTOVOLTAIC CELL MANUFACTURE - A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout. | 01-05-2012 |
| 20120021555 | PHOTOVOLTAIC CELL TEXTURIZATION - A photovoltaic cell texturization method is disclosed. The method includes providing a photovoltaic cell substrate; and texturizing a surface of the photovoltaic cell substrate. The texturizing implements a nanoimprint lithography process to expose a portion of the surface of the photovoltaic cell substrate. An etching process is performed on the exposed portion of the exposed portion of the surface of the photovoltaic cell substrate. | 01-26-2012 |
