Patent application number | Description | Published |
20080263501 | System, Method, and Computer-Readable Medium for Performing Data Preparation for a Mask Design - A method, computer-readable medium, and system for performing data preparation are provided. An integrated circuit design is received, and a plurality of pre-optical proximity correction processes are invoked such that the plurality of pre-optical proximity correction processes are performed in parallel. An optical proximity correction process is invoked in response to a determination that each of the plurality of pre-optical proximity correction processes have completed. A post-optical proximity correction process is invoked in response to a determination that the optical proximity correction process has completed | 10-23-2008 |
20090232384 | Mask Making Decision for Manufacturing (DFM) on Mask Quality Control - The present disclosure provide a method for making a mask. The method includes assigning a plurality of pattern features to different data types; writing the plurality of pattern features on a mask; inspecting the plurality of pattern features with different inspection sensitivities according to assigned data types; and repairing the plurality of pattern features on the mask according to the inspecting of the plurality of pattern features. | 09-17-2009 |
20110091797 | SUPERIMPOSE PHOTOMASK AND METHOD OF PATTERNING - Provided is a photomask that includes a substrate having a first region and a second region, a first pattern disposed in the first region of the substrate, and a second pattern disposed in the second region of the substrate. The first and second patterns are a decomposition of a design pattern to be transferred onto a wafer in a lithography process. | 04-21-2011 |
20110159410 | COST-EFFECTIVE METHOD FOR EXTREME ULTRAVIOLET (EUV) MASK PRODUCTION - The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping. | 06-30-2011 |
20110161893 | LITHOGRAPHIC PLANE CHECK FOR MASK PROCESSING - The present disclosure provides for many different embodiments. An exemplary method can include providing a mask fabricated according to a design pattern; extracting a mask pattern from the mask; converting the mask pattern into a rendered mask pattern, wherein the simulated design pattern includes the design pattern and any defects in the mask; simulating a lithography process using the rendered mask pattern to create a virtual wafer pattern; and determining whether any defects in the mask are critical based on the virtual wafer pattern. The critical defects in the mask can be repaired. | 06-30-2011 |
20110318863 | PHOTOVOLTAIC DEVICE MANUFACTURE - A photovoltaic device manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell using nanoimprint technology to define individual cell units of the photovoltaic device. The methods can include providing a substrate; forming a first conductive layer over the substrate; forming first grooves in the first conductive layer using a nanoimprint and etching process; forming an absorption layer over the first conductive layer, the absorption layer filling in the first grooves; forming second grooves in the absorption layer using a nanoimprint process; forming a second conductive layer over the absorption layer, the second conductive layer filling in the second grooves; and forming third grooves in the second conductive layer and the absorption layer, thereby defining a photovoltaic cell unit. | 12-29-2011 |
20120003780 | PHOTOVOLTAIC CELL MANUFACTURE - A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout. | 01-05-2012 |
20120021555 | PHOTOVOLTAIC CELL TEXTURIZATION - A photovoltaic cell texturization method is disclosed. The method includes providing a photovoltaic cell substrate; and texturizing a surface of the photovoltaic cell substrate. The texturizing implements a nanoimprint lithography process to expose a portion of the surface of the photovoltaic cell substrate. An etching process is performed on the exposed portion of the exposed portion of the surface of the photovoltaic cell substrate. | 01-26-2012 |
20120207381 | Systems and Methods Eliminating False Defect Detections - A method for inspecting a manufactured product includes applying a first test regimen to the manufactured product to identify product defects. The first test regimen produces a first set of defect candidates. The method further includes applying a second test regimen to the manufactured product to identify product defects. The second test regimen produces a second set of defect candidates, and the second test regimen is different from the first test regimen. The method also includes generating a first filtered defect set by eliminating ones of the first set of defect candidates that are not indentified in the second set of defect candidates. | 08-16-2012 |
20120211675 | MASK MAKING DECISION FOR MANUFACTURING (DFM) ON MASK QUALITY CONTROL - The present disclosure provide a method for making a mask. The method includes assigning a plurality of pattern features to different data types; writing the plurality of pattern features on a mask; inspecting the plurality of pattern features with different inspection sensitivities according to assigned data types; and repairing the plurality of pattern features on the mask according to the inspecting of the plurality of pattern features. | 08-23-2012 |
20120261563 | CONTAMINATION INSPECTION - A method of forming a standard mask for an inspection system is provided, the method comprising providing a substrate within a chamber, and providing a tetraethylorthosilicate (TEOS) precursor within the chamber. The method further includes reacting the TEOS precursor with an electron beam to form silicon oxide particles of controlled size at one or more controlled locations on the substrate, the silicon oxide particles disposed as simulated contamination defects. | 10-18-2012 |
20130019938 | METHOD FOR FORMING PHOTOVOLTAIC CELL, AND RESULTING PHOTOVOLTAIC CELL - A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout. | 01-24-2013 |
20130193565 | SEMICONDUCTOR MASK BLANKS WITH A COMPATIBLE STOP LAYER - Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer. | 08-01-2013 |
20130323625 | Systems and Methods for Lithography Masks - Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate Mo | 12-05-2013 |
20140014176 | METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE - A photovoltaic device manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell using nanoimprint technology to define individual cell units of the photovoltaic device. The methods can include providing a substrate; forming a first conductive layer over the substrate; forming first grooves in the first conductive layer using a nanoimprint and etching process; forming an absorption layer over the first conductive layer, the absorption layer filling in the first grooves; forming second grooves in the absorption layer using a nanoimprint process; forming a second conductive layer over the absorption layer, the second conductive layer filling in the second grooves; and forming third grooves in the second conductive layer and the absorption layer, thereby defining a photovoltaic cell unit. | 01-16-2014 |
20140106262 | Image Mask Film Scheme and Method - A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process. | 04-17-2014 |
20140189614 | METHOD AND SYSTEM OF MASK DATA PREPARATION FOR CURVILINEAR MASK PATTERNS FOR A DEVICE - A method comprises: (a) transforming a layout of a layer of an integrated circuit (IC) or micro electro-mechanical system (MEMS) to a curvilinear mask layout; (b) replacing at least one pattern of the curvilinear mask layout with a previously stored fracturing template having approximately the same shape as the pattern, to form a fractured IC or MEMS layout; and (c) storing, in a non-transitory storage medium, an e-beam generation file including a representation of the fractured IC or MEMS layout, to be used for fabricating a photomask. | 07-03-2014 |
20140199787 | Semiconductor Mask Blanks with a Compatible Stop Layer - Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detection of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer. | 07-17-2014 |
20140255825 | Mask Blank for Scattering Effect Reduction - Some embodiments relate a method of forming a photomask for a deep ultraviolet photolithography process (e.g., having an exposing radiation with a wavelength of 193 nm). The method provides a mask blank for a deep ultraviolet photolithography process. The mask blank has a transparent substrate, an amorphous isolation layer located over the transparent substrate, and a photoresist layer located over the amorphous isolation layer. The photoresist layer is patterned by selectively removing portions of the photoresist layer using a beam of electrons. The amorphous isolation layer is subsequently etched according to the patterned photoresist layer to form one or more mask openings. The amorphous isolation layer isolates electrons backscattered from the beam of electrons from the photoresist layer during patterning, thereby mitigating CD and overlay errors caused by backscattered electrons. | 09-11-2014 |
20140335446 | Systems and Methods for Lithography Masks - Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate Mo | 11-13-2014 |
20150024306 | MASK OVERLAY CONTROL - Some embodiments of the present disclosure relate to a method of patterning a workpiece with a mask, wherein a scale factor between a geometry of the mask and a corresponding target shape of the mask is determined. The scale factor results from thermal expansion of the mask and geometry due to heating of the mask during exposure to radiation by an electron beam (e-beam) in the mask manufacturing process. A number of radiation pulses necessary to dispose the geometry on the mask is determined. A scale factor for the mask is then determined from the number of pulses. The target shape is then generated on the mask by re-scaling the geometry according to the scale factor prior to mask manufacturing. This method compensates for thermal deformation due to e-beam heating to improve OVL variability in advanced technology nodes. | 01-22-2015 |
20150060669 | Three-Dimensional Semiconductor Image Reconstruction Apparatus and Method - A system comprises an electron beam directed toward a three-dimensional object with one tilting angle and at least two azimuth angles, a detector configured to receive a plurality of scanning electron microscope (SEM) images from the three-dimensional object and a processor configured to calculate a height and a sidewall edge of the three-dimensional object. | 03-05-2015 |