| Patent application number | Description | Published |
|---|
| 20080230791 | Optoelectronic device - An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly. | 09-25-2008 |
| 20080315236 | Optoelectronic semiconductor device and manufacturing method thereof - An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor. | 12-25-2008 |
| 20090020776 | Light-emitting device - A light-emitting device comprises a channel structure in the semiconductor layer for connecting an electrode and an ohmic contact layer by means of a substrate transfer process including a wafer-bonding process and a substrate-lifting-off process. The channel structure is formed in the semiconductor stack for electrically connecting the ohmic contact layer and the electrode and driving the current into the light-emitting device. Thereby, a horizontal type or a vertical type of light-emitting device has a good ohmic contact and high light efficiency. | 01-22-2009 |
| 20090021926 | Wavelength converting system - An embodiment of the invention discloses a wavelength converting system capable of emitting a second electromagnetic radiation having a second wavelength in response to a first electromagnetic radiation having a first wavelength, wherein an energy level of the first electromagnetic radiation is higher than that of the second electromagnetic level, and a positive correlation is between the first wavelength and the second wavelength. | 01-22-2009 |
| 20090108286 | Optoelectronic device - An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly. | 04-30-2009 |
| 20090173963 | Light-emitting device - The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure. | 07-09-2009 |
| 20100159622 | LIGHT EMITTING DEVICE AND METHOD OF FORMING THE SAME - A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6. | 06-24-2010 |
| 20100163907 | CHIP LEVEL PACKAGE OF LIGHT-EMITTING DIODE - The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure. | 07-01-2010 |
| 20100200873 | HIGH EFFICIENT PHOSPHOR-CONVERTED LIGHT EMITTING DIODE - A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer. | 08-12-2010 |
| 20100213491 | LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME - This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation. | 08-26-2010 |
| 20100276719 | OPTOELECTRONIC DEVICE - An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly. | 11-04-2010 |
| 20100283081 | LIGHT-EMITTING DEVICE - A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack. | 11-11-2010 |
| 20110050126 | WAVELENGTH CONVERTING SYSTEM - An embodiment of the invention discloses a wavelength converting system. The wavelength converting system comprises: a wavelength converter having a first area and a second area; a first light source disposed under the first area and inducing a first mixed light being visible above the first area; a second light source disposed under the second area and inducing a second mixed light being visible above the second area; and a carrier supporting the first light source and the second light source. The first light source and the second light source have a dominant wavelength difference of 1 nm˜20 nm, and the first mixed light and the second mixed light have a color temperature difference less than 100K. | 03-03-2011 |
| 20110095325 | OPTOELECTRONIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor. | 04-28-2011 |
| 20110156066 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A PROTECTION LAYER - The present application discloses a semiconductor light-emitting device with a protection layer. The structure includes a heat dispersion substrate, a first connecting layer on the heat dispersion substrate, a protection layer on the first connecting layer, a second connecting layer on the protection layer, and a light-emitting unit on the second connecting layer. The protection layer is highly insulative and can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate. | 06-30-2011 |
