| Patent application number | Description | Published |
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| 20080308818 | Light-emitting device - A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm | 12-18-2008 |
| 20090014744 | Semiconductor light-emitting device and method - The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same. | 01-15-2009 |
| 20090021926 | Wavelength converting system - An embodiment of the invention discloses a wavelength converting system capable of emitting a second electromagnetic radiation having a second wavelength in response to a first electromagnetic radiation having a first wavelength, wherein an energy level of the first electromagnetic radiation is higher than that of the second electromagnetic level, and a positive correlation is between the first wavelength and the second wavelength. | 01-22-2009 |
| 20100127397 | Optoelectronic semiconductor device - An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer. | 05-27-2010 |
| 20100171902 | Liquid crystal display - A liquid crystal display having a backlight module, liquid crystal layer and a color filter layer is disclosed in the invention. An ultraviolet unit for emitting ultraviolet is disposed in the backlight module. The color filter layer is composed of a purity of pixels, and at least one of the purity of pixels is filled with a wavelength-converting material. The wavelength-converting material can convert ultraviolet into green light. | 07-08-2010 |
| 20100213491 | LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME - This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation. | 08-26-2010 |
| 20110050126 | WAVELENGTH CONVERTING SYSTEM - An embodiment of the invention discloses a wavelength converting system. The wavelength converting system comprises: a wavelength converter having a first area and a second area; a first light source disposed under the first area and inducing a first mixed light being visible above the first area; a second light source disposed under the second area and inducing a second mixed light being visible above the second area; and a carrier supporting the first light source and the second light source. The first light source and the second light source have a dominant wavelength difference of 1 nm˜20 nm, and the first mixed light and the second mixed light have a color temperature difference less than 100K. | 03-03-2011 |
| 20110198650 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD - The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same. | 08-18-2011 |
| 20110286201 | WAVELENGTH CONVERTING SYSTEM - An embodiment of the invention discloses a wavelength converting system. The wavelength converting system comprises: a wavelength converter having a first area and a second area; a first light source disposed under the first area and inducing a first mixed light being visible above the first area; a second light source disposed under the second area and inducing a second mixed light being visible above the second area; and a carrier supporting the first light source and the second light source. The first light source and the second light source have a dominant wavelength difference of 1 nm˜20 nm, and the first mixed light and the second mixed light have a color temperature difference less than 100K. | 11-24-2011 |
| 20120025228 | LIGHT-EMITTING DEVICE WITH TEMPERATURE COMPENSATION - The present application provides a light-emitting device comprising a light-emitting diode group, a temperature compensation element electrically connected to the light-emitting diode group. When a junction temperature of the light-emitting diode group is increased from a first temperature to a second temperature during operation, the current flowing through the light-emitting diode group at the second temperature is larger than the current flowing through the light-emitting diode group at the first temperature. | 02-02-2012 |
| Patent application number | Description | Published |
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| 20100171094 | LIGHT-EMITTING SEMICONDUCTOR APPARATUS - A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer. The second patterned reflective layer is positioned on an area corresponding to the opening. The light-emitting structure and the carrier are respectively on two sides of the reflective structure. | 07-08-2010 |
| 20100308355 | LIGHT-EMITTING DEVICE HAVING A THINNED STRUCTURE AND THE MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support. | 12-09-2010 |
| 20100314657 | OPTOELECTRONIC DEVICE - A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer. | 12-16-2010 |
