Patent application number | Description | Published |
20090194759 | PHASE CHANGE MEMORY DEVICE - A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second electrode electrically connecting a second side of the phase change layer, wherein the phase change layer composes mainly of gallium (Ga), antimony (Sb) and tellurium (Te) and unavoidable impurities, having the composition range of Ga | 08-06-2009 |
20120222291 | FABRICATING METHOD OF MAGNETORESISTANCE SENSOR - A fabricating method of a magnetoresistance sensor is provided with cost effective and process flexibility features. Firstly, a substrate is provided. Then, at least one magnetoresistance structure and at least one bonding pad are formed over the substrate, wherein the bonding pad is electrically connected with the magnetoresistance structure. Then, a passivation layer is formed over the magnetoresistance structure and the bonding pad. Then, a magnetic shielding and concentrator structure is formed over the passivation layer at a location corresponding to the magnetoresistance structure. Finally, bonding pad openings is formed on the passivation layer by patterned polyimide, thereby exposing the bonding pad. After bonding pad was opened, the patterned polyimide can be removed or retained as an additional protection layer. | 09-06-2012 |
20120306488 | SPIN-VALVE MAGNETORESISTANCE STRUCTURE AND SPIN-VALVE MAGNETORESISTANCE SENSOR - A spin-valve magnetoresistance structure includes a first magnetoresistance layer having a fixed first magnetization direction, a second magnetoresistance layer disposed on a side of the first magnetoresistance layer and having a variable second magnetization direction, and a spacer disposed between the first magnetoresistance layer and the second magnetoresistance layer. The second magnetization direction is at an angle in a range from 30 to 60 degrees or from 120 to 150 degrees to the first magnetization direction when the intensity of an applied external magnetic field is zero. The second magnetization direction varies with the external magnetic field thereby changing an electrical resistance of the spin-valve magnetoresistance structure. A spin-valve magnetoresistance sensor based on the spin-valve magnetoresistance structure is also provided. | 12-06-2012 |
20130009258 | TUNNELING MAGNETORESISTANCE SENSOR - A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time. | 01-10-2013 |
20130114393 | Method of Handling Shortened Resource Block for MTC Device and Related Communication Device - A method of arranging a shortened resource block (RB) without a direct current (DC) subcarrier for a wireless communication system comprising a communication device and a network is disclosed. The method comprises selecting a RB from a plurality of RBs comprising a plurality of available subcarriers, according to a configuration, wherein the RB comprises a plurality of subcarriers; and removing the DC subcarrier from the plurality of subcarriers of the RB according to the configuration, to construct the shortened RB without the DC subcarrier. | 05-09-2013 |
20130114537 | Method of Handling Resource Allocation for MTC and Related Communication Device - A method of performing a random access (RA) procedure for a communication device in a wireless communication system is disclosed. The method comprises receiving first system information transmitted in a first subband resource of at least one subband resource by a network of the wireless communication system when performing a cell search procedure; receiving second system information transmitted in a second subband resource of the at least one subband resource according to the first system information, after performing the cell search procedure; and performing the RA procedure by using the second subband resource of the at least one subband resource according to at least one of the first system information and the second system information. | 05-09-2013 |
20130115719 | METHOD FOR MANUFACTURING INTEGRATED CIRCUIT STRUCTURE WITH MAGNETORESISTANCE COMPONENT - A method or manufacturing an integrated circuit structure with a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including a metal pad is formed on the substrate. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. An opening is formed in the dielectric layer so as to form a step-drop. A magnetoresistance material layer is formed on the dielectric layer after forming the metal damascene structure and the opening A photolithography process is applied to pattern the magnetoresistance material layer to form a magnetoresistance component electrically connected to the metal damascene structure. | 05-09-2013 |
20130176917 | Method of Handling Hybrid Automatic Repeat Request Acknowledgement Responses in Wireless Communication System - A method of handling hybrid automatic repeat request (HARQ) acknowledgement responses in a network of a wireless communication system is disclosed. The method comprises assigning resources for a plurality of physical hybrid indicator channels (PHICHs) and a plurality of extended physical hybrid indicator channels (ePHICHs); and transmitting a HARQ acknowledgement response to a communication device of the wireless communication system on a channel selected from the plurality of PHICHs and the plurality of ePHICHs, after receiving an uplink transmission from the communication device. | 07-11-2013 |
20130176930 | Method of Handling Hybrid Automatic Repeat Request Resources in Wireless Communication System - A method of handling hybrid automatic repeat request (HARQ) acknowledgement responses in a network of a wireless communication system is disclosed. The method comprises selecting a plurality of communication devices of the wireless communication system when the plurality of communication devices conform to a specified rule; and always responding positive HARQ acknowledgement messages to the plurality of communication devices. | 07-11-2013 |
20130200328 | PHASE CHANGE MEMORY DEVICES - A phase change memory device is provided, including: a substrate; a first dielectric layer disposed over the substrate; a first electrode disposed in the first dielectric layer; a second dielectric layer formed over the first dielectric layer, covering the first electrode; a heating electrode disposed in the second dielectric layer, contacting the first electrode; a phase change material layer disposed over the second dielectric layer, contacting the heating electrode; and a second electrode disposed over the phase change material layer, wherein the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides, and the first portion of the heating electrode includes no metal silicides, and includes refractory metal materials or noble metal materials. | 08-08-2013 |
20140132250 | Integrated Magnatoresistive Sensing device - An integrated magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element and a built-in self test (BIST) unit. The substrate comprises a first surface and a second surface opposite to the first surface. The magnetoresistive sensing element is disposed above the first surface and comprises at least a magnetoresistive layer not parallel to the first surface. The BIST unit is disposed above the first surface and comprises at least a conductive part corresponding to the magnetoresistive layer. The conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface. A projection of the conductive part on the first surface does not overlap with a projection of the magnetoresistive layer on the first surface. | 05-15-2014 |
20140322828 | Method for Manufacturing Magnetoresistance Component - A method for manufacturing a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including an interconnect structure is formed on the substrate, wherein the interconnect structure comprises a metal pad. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. A patterned magnetoresistance component is formed above the metal damascene structure to electrically connect to the metal damascene structure. | 10-30-2014 |
20140332914 | Magnatoresistive Structure and Method for Forming the Same - A magnetoresistive structure includes a substrate and a patterned stack structure. The substrate has a back surface and a front surface having a step portion. The patterned stack structure is on the step portion of the front surface and comprises a magnetoresistive layer, a conductive cap layer and a dielectric hard mask layer. The step portion has a top surface parallel to the back surface, a bottom surface parallel to the back surface and a step height joining the top surface and bottom surface and being not parallel to the back surface. | 11-13-2014 |