| Patent application number | Description | Published |
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| 20100027704 | Method and Apparatus for Data Transmission Based on Signal Priority and Channel Reliability - Various methods for data transmission based on signal priority and channel reliability are provided. One example method includes encoding a number of bits into coded bits including systematic bits and respective associated parity bits, the bits being encoded for transmission via channels of a multi-channel communications system including a more reliable channel and a less reliable channel. The example method also includes allocating the systematic bits to bit locations within a first stream corresponding to the more reliable channel, allocating the systematic bits to bit locations having a higher signal priority within a second stream corresponding to the less reliable channel, and allocating the parity bits to bit locations within the second stream. Similar and related example methods and apparatuses for allocating the systematic and parity bits to the respective bit locations in both the more and less reliable channels are also provided. | 02-04-2010 |
| 20100177694 | APPARATUS AND METHOD FOR TRANSMITTING UPLINK CONTROL INFORMATION - A method for a user equipment to transmit uplink control information to a base station, the base station being configured to receive uplink control information on a plurality of groups of subcarriers. The method includes: randomly determining one of the groups of subcarriers; and transmitting uplink control information on the randomly determined group of subcarriers. | 07-15-2010 |
| 20100265904 | METHOD, APPARATUS AND COMPUTER PROGRAM PRODUCT FOR INTERFERENCE AVOIDANCE IN UPLINK COORDINATED MULTI-POINT RECEPTION - A method of providing interference avoidance in uplink CoMP may include generating an orthogonal frequency division multiplexing (OFDM) symbol for uplink transmission to coordinated multi-point (CoMP) cells, and providing a cyclic-prefix and a cyclic-postfix for the OFDM symbol generated to reduce uplink interference without backhaul transmission for delay or timing advance information. A corresponding apparatus and computer program product are also provided. An alternative method of providing interference avoidance in uplink CoMP may include measuring timing differences between downlink signals received at a mobile terminal in connection with coordinated multi-point (CoMP) transmission from a serving cell and one or more coordinating cells and adjusting uplink transmission timing for signals to be transmitted from the mobile terminal based on the timing differences measured. A corresponding apparatus and computer program product are also provided. | 10-21-2010 |
| 20100329200 | APPARATUS AND METHOD FOR ALLOCATING UPLINK RESOURCES - An apparatus is provided for allocating uplink resources in a system in which downlink component carrier bands are aggregated and uplink component carrier bands are aggregated. The apparatus includes a processor configured to perform or cause the apparatus to perform a number of functions. The functions include receiving an assignment or an indication of an assignment of one or more resource indices to the apparatus. Additional resource indices for the apparatus may be derived as a function of an assigned resource index. The assigned resource indices and/or additional resource indices may be pre-assigned to respective pairs of downlink and uplink component carrier bands, or may be mapped to uplink component carriers. The apparatus may then be enabled to transmit or may prepare for transmission uplink control signals in an uplink component carrier band in accordance with an allocation of uplink resources specified by one of the resource indices. | 12-30-2010 |
| 20110164536 | SYSTEMS AND METHODS FOR DATA RELAY TRANSMISSION - A method for a base station to transmit data, the data to be relayed by a relay station to user equipment, the method including: encoding, based on an identification of the relay station or an identification of the user equipment, control information that indicates resource allocation for the relay station; and transmitting the control information to the relay station. | 07-07-2011 |
| Patent application number | Description | Published |
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| 20080237562 | PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF - Phase change memory devices and fabrication methods thereof. A phase change memory device comprises a stacked heating element with a conductive portion and a relatively high resistive portion, wherein the relatively high resistive portion includes a nitrogen-containing metal silicide part. The heating stacked element such as a highly resistive nitrogen-containing metal silicide (MSi | 10-02-2008 |
| 20080296554 | PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF - Phase change memory devices and fabrication methods thereof. A phase change memory device includes an array of phase change memory cells. Each phase change memory cell includes a selecting transistor disposed on a substrate. An upright electrode structure is electrically connected to the selecting transistor. An upright phase change memory layer is stacked on the upright electrode structure with a contact area therebetween, wherein the contact area serves as the location where phase transition takes place. | 12-04-2008 |
| 20090078926 | PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein the drain of the transistor electrically connects the electrode or the phase change layer is disclosed. | 03-26-2009 |
| 20100133495 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides. | 06-03-2010 |
| 20100213432 | PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF - A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer. | 08-26-2010 |
