| Patent application number | Description | Published |
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| 20090298680 | ALUMINUM PRODUCT AND METHOD FOR PRODUCING SAME - An aluminum product includes an aluminum substrate, a porous alumina film formed on the aluminum substrate, and a photo-catalyst film. The alumina film has an array of pores defined on a surface thereof. The photo-catalyst film is formed on the surface of the alumina film and inner walls of the alumina film located in the pores. An exemplary method for producing the aluminum product is also provided. | 12-03-2009 |
| 20100045979 | PHOTOCATALYSIS TESTING DEVICE - A photocatalysis testing device includes a reaction chamber, a light source, and a spectrophotometer. Reactants including a methylene blue (MB) solution and a photocatalyst can be added to the reaction chamber and illuminated by the light source. Color vanishing rate of the MB solution can be measured by the spectrophotometer. Further, the photocatalysis testing device also includes a light-tight chamber and a temperature stabilizer. The reaction chamber and the light source are received in the light-tight chamber to avoid ambient light effecting on the photocatalysis test. The spectrophotometer is positioned outside the light-tight chamber and optically coupled to the reaction chamber. The temperature stabilizer is configured for stabilizing temperature of the MB solution. | 02-25-2010 |
| 20100071618 | FILM COATING HOLDER AND FILM COATING DEVICE USING SAME - A film coating device for coating a flexible substrate includes a housing and a film coating holder for holding the flexible substrate. The housing defines a chamber, and the film coating holder is received in the chamber. The film coating holder includes a motor, a driving roller, and a driven roller. The driving roller is rotatable by a motor relative to the housing. The driven roller is substantially parallel to the driving roller. The driven roller is rotatable together with the driving roller by transmission of the flexible substrate. | 03-25-2010 |
| 20100151271 | MULTILAYER SUBSTRATE - A multilayer substrate includes a base layer, a coating layer and an intermediate layer positioned between the base layer and the coating layer. The intermediate layer contains chromium and nitrogen. A content of the chromium in the intermediate layer gradually decreases from the base layer to the coating layer. | 06-17-2010 |
| 20110030614 | WET COATING SYSTEM HAVING ANNEALING CHAMBER - An exemplary wet coating system includes a coating chamber, an annealing chamber, an unloading chamber, and a mechanical arm. The coating chamber is configured for allowing a substrate being wet coated therein. The unloading chamber is configured for allowing the substrate being unloaded therein. The annealing chamber is interposed between and communicated with the coating chamber and the unloading chamber and is configured for allowing the substrate being annealed therein. The communicated coating chamber, annealing chamber, and unloading chamber are vacuumized. The mechanical arm is configured for holding the substrate and moving the substrate across the coating chamber, the annealing chamber, and the unloading chamber. | 02-10-2011 |
| 20110031108 | SPUTTERING DEPOSITION METHOD AND APPARATUS - A sputtering deposition method is utilized by a sputtering deposition apparatus including a first chamber, a second chamber, a first carrier, and a second carrier. Some first substrates are positioned in the first carriers in the first chamber for heating. The first carriers in the first chamber and the second carriers in the second chamber are exchanged. The first substrates in the second chamber are sputtered. The second carriers in the first chamber and the first carriers in the second chamber are exchanged. The first substrates in the first chamber are taken out. | 02-10-2011 |
| 20110051244 | ARTICLE HAVING METAL DIELECTRIC REFLECTIVE FILM - A article includes a substrate and a metal dielectric reflective film. The metal dielectric reflective film is formed on the substrate, the metal dielectric reflective film includes a dielectric multiple layer and a metal layer. The dielectric multiple layer includes a first layer, a second layer, a third layer, and a fourth layer arranged in the order written and stacked one on another. The first and third layers comprised of a low refractive index material, the second and fourth layers comprised of a high refractive index material. The metal layer is disposed on the fourth layer. | 03-03-2011 |
| Patent application number | Description | Published |
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| 20100052076 | METHOD OF FABRICATING HIGH-K POLY GATE DEVICE - The present disclosure provides a semiconductor device that includes a semiconductor substrate, and a transistor formed in the substrate. The transistor has a gate structure that includes an interfacial layer formed on the substrate, a high-k dielectric layer formed on the interfacial layer, a capping layer formed on the high-k dielectric layer, the capping layer including a silicon oxide, silicon oxynitride, silicon nitride, or combinations thereof, and a polysilicon layer formed on the capping layer. | 03-04-2010 |
| 20100096705 | IMPLANTATION METHOD FOR REDUCING THRESHOLD VOLTAGE FOR HIGH-K METAL GATE DEVICE - The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a high-k dielectric layer over a semiconductor substrate, forming a capping layer over the high-k dielectric layer, forming a metal layer over the capping layer, forming a semiconductor layer over the metal layer, performing an implantation process on the semiconductor layer, the implantation process using a species including F, and forming a gate structure from the plurality of layers including the high-k dielectric layer, capping layer, metal layer, and semiconductor layer. | 04-22-2010 |
| 20100105185 | REDUCING POLY-DEPLETION THROUGH CO-IMPLANTING CARBON AND NITROGEN - A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer over the semiconductor substrate; forming a gate electrode layer over the gate dielectric layer; doping carbon and nitrogen into the gate electrode layer; and, after the step of doping carbon and nitrogen, patterning the gate dielectric layer and the gate electrode layer to form a gate dielectric and a gate electrode, respectively. | 04-29-2010 |
| 20100156572 | CARRIER FOR TRANSMITTING HIGH FREQUENCY SIGNAL AND CARRIER LAYOUT METHOD THEREOF - A carrier for transmitting a high frequency signal and a carrier layout method thereof are provided. The carrier includes a substrate, conducting wires and reference planes both formed on the substrate. The carrier layout method includes defining impedance and thickness of the carrier according to the high frequency signal and defining layout parameters according to the impedance and the thickness. The layout parameters include a conducting layer formed on the conducting wires, a coplanar waveguide formed between the reference planes and the conducting wires, roughness portions formed on the conducting wires, recessed portions formed on the conducting wires, and the substrate being a high loss tangent substrate. The layout is performed according to the layout parameters defined thereabove, so as to increase loss of the high frequency signal in transmission. | 06-24-2010 |
| 20110117734 | Method of Fabricating High-K Poly Gate Device - The present disclosure provides a semiconductor device that includes a semiconductor substrate, and a transistor formed in the substrate. The transistor has a gate structure that includes an interfacial layer formed on the substrate, a high-k dielectric layer formed on the interfacial layer, a capping layer formed on the high-k dielectric layer, the capping layer including a silicon oxide, silicon oxynitride, silicon nitride, or combinations thereof, and a polysilicon layer formed on the capping layer. | 05-19-2011 |
