Patent application number | Description | Published |
20100182421 | METHODS AND APPARATUS FOR DETECTION AND CLASSIFICATION OF SOLAR CELL DEFECTS USING BRIGHT FIELD AND ELECTROLUMINESCENCE IMAGING - Methods and apparatus for integrated, in-line metrology of solar cells involve three distinct inspection and testing operations, prior to string and module assembly. Two of the inspections are performed by image analysis using bright field illumination. The third inspection involves electroluminescence imaging, where luminescence in the solar cell is achieved by inducing a forward bias in the solar cell, and analyzing a resulting grayscale image for defects. | 07-22-2010 |
20100319754 | PHOTOVOLTAIC MODULE CONFIGURATION - Improvements for a photovoltaic module (PVM) include the use of a micro-embossed, reflective optical film located in areas of the PVM not covered by the solar cells. The optical film is configured to reflect light incident upon the PVM onto the solar cells and may be formed from a polymeric material. Further enhancements include the use of a compliant heat conducting polymeric film on back sides of the solar cells and a heat conductive polymeric film deposited on an aluminum foil to form a composite film, which effects heat transfer from the solar cell junctions and improves cell efficiency. A top glass with selective frequency and anti-reflective coatings may also be used. Further, improved interconnects for the solar cells eliminate sharp edges, helping to avoid any potential for encapsulant tearing or tab “push-through” and resultant shorting during lamination. | 12-23-2010 |
20130037084 | Photovoltaic Module Light Manipulation for Increased Module Output - Crystalline silicon photovoltaic (PV) cell-based and thin film PV material-based PV modules include a light management material configured to absorb solar energy incident on the PV module across a broad frequency spectrum and re-emit at least a portion of the absorbed solar energy in a narrow frequency spectrum at which the PV cells or PV materials are efficient at converting photon energy to electrical energy. | 02-14-2013 |
Patent application number | Description | Published |
20120180016 | Standard Cell Architecture Using Double Poly Patterning for Multi VT Devices - An apparatus fabricated using a standard cell architecture including devices having different voltage thresholds may include a first set of polylines associated with a first channel length, where each polyline within the first set of polylines is separated by a substantially constant pitch. The apparatus may further include a second set of polylines associated with a second channel length and aligned with the first set of polylines, where each polyline within the second set of polylines is laterally separated by the substantially constant pitch. The apparatus may further include a first active region below the first set of polylines, and a second active region below the second set of polylines, where the first active region and the second active region are separated by a distance of less than 170 nm. | 07-12-2012 |
20130320494 | METAL FINGER CAPACITORS WITH HYBRID METAL FINGER ORIENTATIONS IN STACK WITH UNIDIRECTIONAL METAL LAYERS - A semiconductor die having a plurality of metal layers, including a set of metal layers having a preferred direction for minimum feature size. The set of metal layers are such that adjacent metal layers have preferred directions orthogonal to one another. Finger capacitors formed in the set of metal layers are such that a finger capacitor formed in one metal layer has a finger direction parallel to the preferred direction of that metal layer. In bidirectional metal layers, capacitor fingers may be in either direction. | 12-05-2013 |
20140092523 | BONE FRAME, LOW RESISTANCE VIA COUPLED METAL OXIDE-METAL (MOM) ORTHOGONAL FINGER CAPACITOR - An orthogonal finger capacitor includes a layer having an anode bone frame adjacent a cathode bone frame, the anode bone frame having a first portion extending along an axis and a second portion extending perpendicular to the axis. A set of anode fingers extends from the first portion. A set of cathode fingers extends from the cathode bone frame, interdigitated with the set of anode fingers. An overlaying layer has another anode bone frame having a first portion parallel to the axis and a perpendicular second portion. A via couples the overlaying anode bone frame to the underlying anode bone frame. The via is located where the first portion of the overlaying anode bone frame overlaps the second portion of the underlying anode bone frame or, optionally, where the second portion of the overlying anode bone frame overlaps the first portion of the underlying anode bone frame. | 04-03-2014 |
20140138793 | CAPACITOR USING MIDDLE OF LINE (MOL) CONDUCTIVE LAYERS - A method for fabricating a metal-insulator-metal (MIM) capacito includes depositing a first middle of line (MOL) conductive layer over a shallow trench isolation (STI) region of a semiconductor substrate. The first MOL conductive layer provides a first plate of the MIM capacitor as well as a first set of local interconnects to source and drain regions of a semiconductor device. The method also includes depositing an insulator layer on the first MOL conductive layer as a dielectric layer of the MIM capacitor. The method further includes depositing a second MOL, conductive layer on the insulator layer as a second plate of the MIM capacitor. | 05-22-2014 |
20140197519 | MIM CAPACITOR AND MIM CAPACITOR FABRICATION FOR SEMICONDUCTOR DEVICES - In a particular embodiment, a method of forming a metal-insulator-metal (MIM) capacitor includes removing, using a lithographic mask, a first portion of an optical planarization layer to expose a region in which the MIM capacitor is to be formed. A second portion of an insulating layer is formed on a first conductive layer that is formed on a plurality of trench surfaces within the region. The method further includes removing at least a third portion of the insulating layer according to a lift-off technique. | 07-17-2014 |
20140197520 | RESISTOR AND RESISTOR FABRICATION FOR SEMICONDUCTOR DEVICES - In a particular embodiment, a method includes removing a first portion of an optical planarization layer using a lithographic mask to expose a region of the optical planarization layer. A resistive layer is formed at least partially within the region. The method further includes removing at least a second portion of the optical planarization layer and at least a third portion of the resistive layer to form a resistor. | 07-17-2014 |
20140203404 | SPIRAL METAL-ON-METAL (SMOM) CAPACITORS, AND RELATED SYSTEMS AND METHODS - Spiral metal-on-metal (MoM or SMoM) capacitors and related systems and methods of forming MoM capacitors are disclosed. In one embodiment, a MoM capacitor disposed in a semiconductor die is disclosed. The MoM capacitor comprises a first electrode coupled to a first trace. The first trace is coiled in a first inwardly spiraling pattern and comprised of first parallel trace segments. The MoM capacitor also comprises a second electrode coupled to a second trace. The second trace is coiled in the first inwardly spiraling pattern and comprised of second parallel trace segments interdisposed between the first parallel trace segments. Reduced variations in the capacitance allow circuit designers to build circuits with tighter tolerances and generally improve circuit reliability. | 07-24-2014 |
20140231957 | COMPLEMENTARY BACK END OF LINE (BEOL) CAPACITOR - A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect layer of the interconnect stack. The CBC structure may also include a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes at least one metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure may also include a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having at least a portion of the first upper interconnect layer, and a second capacitor plate having at least a portion of the MIM capacitor layer(s). | 08-21-2014 |
20140264610 | METAL OXIDE SEMICONDUCTOR (MOS) ISOLATION SCHEMES WITH CONTINUOUS ACTIVE AREAS SEPARATED BY DUMMY GATES AND RELATED METHODS - Embodiments disclosed in the detailed description include metal oxide semiconductor (MOS) isolation schemes with continuous active areas separated by dummy gates. A MOS device includes an active area formed from a material with a work function that is described as either an n-metal or a p-metal. Active components are formed on this active area using materials having a similar work function. Isolation is effectuated by positioning a dummy gate between the active components. The dummy gate is made from a material having an opposite work function relative to the material of the active area. For example, if the active area was a p-metal material, the dummy gate would be made from an n-metal, and vice versa. | 09-18-2014 |
20150028452 | COMPLEMENTARY BACK END OF LINE (BEOL) CAPACITOR - A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes a lower interconnect layer of the interconnect stack. The CBC structure also includes a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes a metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure also includes a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having a portion of the first upper interconnect layer, and a second capacitor plate having a portion of the MIM capacitor layer(s). | 01-29-2015 |
20150061037 | SYSTEM AND METHOD OF VARYING GATE LENGTHS OF MULTIPLE CORES - A method includes forming a first poly-silicon gate of a first transistor, the first poly-silicon gate having a first length. The first transistor is located in a first core. The method also includes forming a second poly-silicon gate of a second transistor, the second poly-silicon gate having a second length that is shorter than the first length. The second transistor is located in a second core. The first core is located closer to a center of a semiconductor die than the second core. | 03-05-2015 |
Patent application number | Description | Published |
20080275009 | ORAL ADMINISTRATION OF N-(2-CHLORO-6-METHYLPHENYL)-2-[[6-[4-(2-HYDROXYETHYL)-1-PIPERAZINYL]-2-METHYL-4-PYRIMIDINYL]AMINO]-1,3-THIAZOLE-5-CARBOXAMIDE AND SALTS THEREOF - Disclosed are a method of treating cancer and/or other proliferative diseases comprising orally administering N-(2-chloro-6-methylphenyl)-2-((6-(4-(2-hydroxyethyl)-1-piperazinyl)-2-methyl-4-pyrimidinyl)amino)-1,3-thiazole-5-carboxamide or a salt thereof, and pharmaceutical compositions comprising N-(2-chloro-6-methylphenyl)-2-((6-(4-(2-hydroxyethyl)-1-piperazinyl)-2-methyl-4-pyrimidinyl)amino)-1,3-thiazole-5-carboxamide or a salt thereof. Also disclosed are N-(2-chloro-6-methylphenyl)-2-((6-(4-(2-hydroxyethyl)-1-piperazinyl)-2-methyl-4-pyrimidinyl)amino)-1,3-thiazole-5-carboxamide salts, as well as crystalline forms thereof. | 11-06-2008 |
20090149650 | PROCESS FOR PREPARING 2-AMINOTHIAZOLE-5-AROMATIC CARBOXAMIDES AS KINASE INHIBITORS - The invention relates to processes for preparing compounds having the formula, | 06-11-2009 |
20090239951 | Crystalline Material - The invention relates to novel crystalline forms of 3-[[3,5-dibromo-4-[4-hydroxy-3-(1-methylethyl)-phenoxy]-phenyl]-amino]-3-oxopropanoic acid, said crystalline forms being characterised by a powder X-ray diffraction pattern having major peaks at either 2θ=16.1±0.2, 20.1±0.2, 20.7±0.2, and 24.2+0.2; or 2θ=9.0±0.2, 14.7±0.2, 19.6±0.2, 21.6±0.2, and 24.3+0.2. | 09-24-2009 |
20100076191 | PROCESS FOR PREPARING TRIAZOLE SUBSTITUTED AZAINDOLEOXOACETIC PIPERAZINE DERIVATIVES AND NOVEL SALT FORMS PRODUCED THEREIN - A process is provided for preparing triazole substituted azaindoleoxoacetic piperazine derivative. Novel intermediates produced in the above process, and novel N-1 and amorphous forms of a 1,2,3-triazole substituted azaindoloxoacetic piperazine derivatives and processes for producing such novel forms are also provided. | 03-25-2010 |
20120302750 | PROCESS FOR PREPARING 2-AMINOTHIAZOLE-5-AROMATIC CARBOXAMIDES AS KINASE INHIBITORS - The invention relates to processes for preparing compounds having the formula, | 11-29-2012 |
Patent application number | Description | Published |
20100111891 | LINEAR POLYOL STABILIZED POLYFLUOROACRYLATE COMPOSITIONS - The present invention is directed to compositions of a linear polyol and a salt of a crosslinked cation exchange polymer comprising a fluoro group and an acid group. These compositions are useful to bind potassium in the gastrointestinal tract. | 05-06-2010 |
20110236340 | CROSSLINKED CATION EXCHANGE POLYMERS, COMPOSITIONS AND USE IN TREATING HYPERKALEMIA - The present invention is directed to crosslinked cation exchange polymers comprising a fluoro group and an acid group, pharmaceutical compositions of these polymers, compositions of a linear polyol and a salt of such polymer. Crosslinked cation exchange polymers having beneficial physical properties, including combinations of particle size, particle shape, particle size distribution, viscosity, yield stress, compressibility, surface morphology, and/or swelling ratio are also described. These polymers and compositions are useful to bind potassium in the gastrointestinal tract. | 09-29-2011 |
20130131202 | LINEAR POLYOL STABILIZED POLYFLUOROACRYLATE COMPOSITIONS - The present invention is directed to compositions of a linear polyol and a salt of a crosslinked cation exchange polymer comprising a fluoro group and an acid group. These compositions are useful to bind potassium in the gastrointestinal tract. | 05-23-2013 |
20130189216 | LINEAR POLYOL STABILIZED POLYFLUOROACRYLATE COMPOSITIONS - The present invention is directed to compositions of a linear polyol and a salt of a crosslinked cation exchange polymer comprising a fluoro group and an acid group. These compositions are useful to bind potassium in the gastrointestinal tract. | 07-25-2013 |