Patent application number | Description | Published |
20080316416 | LIQUID CRYSTAL DISPLAY AND METHOD FOR MAKING THE SAME - An LCD device has an LCD panel having a peripheral region, a heating layer disposed on the LCD panel, and two first flexible printed circuits (FPCs) electrically connected to the heating layer, and adapted to transmit voltage to the heating layer so that the heating layer can generate heat. At least one of the FPCs has a wide portion and a narrow portion being fixed in the peripheral region of the LCD panel and being connected to the heating layer. | 12-25-2008 |
20090050906 | Photo Detector and a Display Panel having the Same - A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed. | 02-26-2009 |
20090280606 | METHOD FOR FABRICATING PHOTO SENSOR - A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor. | 11-12-2009 |
20090283850 | OPTICAL SENSOR AND METHOD OF MAKING THE SAME - An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer. | 11-19-2009 |
20100012944 | THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME - A thin film transistor (TFT) formed on a transparent substrate is provided. The thin film transistor includes a patterned semiconductor layer, a gate insulating layer disposed on the patterned semiconductor layer, a gate electrode disposed on the gate insulating layer, and a patterned light-absorbing layer. The patterned semiconductor layer includes a channel region, and a source region and a drain region disposed on two opposite sides of the channel region in the pattern semiconductor layer. The patterned light-absorbing layer is disposed between the transparent substrate and the patterned semiconductor layer. | 01-21-2010 |
20100013001 | METHOD FOR MANUFACTURING NON-VOLATILE MEMORY AND STRUCTURE THEREOF - A method for manufacturing a non-volatile memory and a structure thereof are provided. The manufacturing method comprises the following steps. Firstly, a substrate is provided. Next, a semiconductor layer is formed on the substrate. Then, a Si-rich dielectric layer is formed on the semiconductor layer. After that, a plurality of silicon nanocrystals is formed in the Si-rich dielectric layer by a laser annealing process to form a charge-storing dielectric layer. Last, a gate electrode is formed on the charge-storing dielectric layer. | 01-21-2010 |
20100182559 | LIQUID CRYSTAL DISPLAY HAVING HEATING LAYER AND METHOD OF MAKING THE SAME - An LCD includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a bridge electrode formed in the first opening, a passivation layer covering the switching device and the capacitor, a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device, a second substrate having a common electrode disposed on the first substrate, and a liquid crystal layer. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings respectively exposing the contact pads and the bridge electrode, wherein the bridge electrode is electrically disconnected from the contact pads. | 07-22-2010 |
20100207033 | X-RAY DETECTOR AND FABRICATION METHOD THEREOF - A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost. | 08-19-2010 |
20100244033 | OPTICAL SENSOR, METHOD OF MAKING THE SAME, AND DISPLAY PANEL HAVING OPTICAL SENSOR - An optical sensor, method of making the same, and a display panel having an optical sensor. The optical sensor includes a first electrode, a second electrode, a photosensitive silicon-rich dielectric layer, and a first interfacial silicon-rich dielectric layer. The photosensitive silicon-rich dielectric layer is disposed between the first and second electrodes. The first interfacial silicon-rich dielectric layer is disposed between the first electrode and the photosensitive silicon-rich dielectric layer. | 09-30-2010 |
20100321341 | PHOTO SENSOR, METHOD OF FORMING THE SAME, AND OPTICAL TOUCH DEVICE - The present invention provides a photo sensor, a method of forming the photo sensor, and a related optical touch device. The photo sensor includes a first electrode, a second electrode, a first silicon-rich dielectric layer and a second silicon-rich dielectric layer. The first silicon-rich dielectric layer is disposed between the first electrode and the second electrode for sensing infrared rays, and the second silicon-rich dielectric layer is disposed between the first silicon-rich dielectric layer and the second electrode for sensing visible light beams. The multi-layer structure including the first silicon-rich dielectric layer and the second silicon-rich dielectric layer enables the single photo sensor to effectively detect both infrared rays and visible light beams. Moreover, the single photo sensor is easily integrated into an optical touch device to form optical touch panel integrated on glass. | 12-23-2010 |
20100330735 | METHOD OF FORMING OPTICAL SENSOR - A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer. | 12-30-2010 |
20110037729 | OLED TOUCH PANEL AND METHOD OF FORMING THE SAME - A displaying region and a sensing region are defined in each pixel region of the OLED touch panel of the present invention. The readout thin film transistor of the sensing region is formed by the same processes with the drive thin film transistor of the displaying region. The top and bottom electrodes of the optical sensor are formed by the same processes with the top and bottom electrodes of the OLED. Accordingly, the present invention can just add a step of forming the patterned sensing dielectric layer to the processes of forming an OLED panel to integrate the optical sensor into the pixel region of the OLED panel. Thus, an OLED touch panel is formed. | 02-17-2011 |
20110164195 | DISPLAY DEVICE HAVING HEATING LAYER AND METHOD OF MAKING THE SAME - A display device includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a passivation layer covering the switching device and the capacitor, and a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings exposing the contact pads. | 07-07-2011 |
20110286077 | DISPLAY DEVICE - A display device includes a display panel, a barrier layer, and a sealant. The display panel includes a backplane and a frontplane disposed on the backplane, wherein the frontplane includes a plurality of frontplane sidewalls. The frontplane sidewalls at least include a first frontplane sidewall and a second frontplane sidewall, forming a frontplane concavity. The barrier layer includes a first barrier layer sidewall and a second barrier layer sidewall, wherein the first barrier layer sidewall and the second barrier layer sidewall form a barrier layer concavity. The barrier layer concavity corresponds to the frontplane concavity, and at least one of the barrier layer concavity and the frontplane concavity does not include a right angle. The sealant is disposed in a sealant accommodating space defined by the frontplane sidewalls of the frontplane, an inner surface of the backplane and an inner surface of the barrier layer. | 11-24-2011 |
20110299151 | E-INK DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An E-ink display device includes an active element array substrate, an E-ink layer, a protective layer and a sealant. The active element array substrate has a surface, and the surface includes a contacting region and a sealing region. The E-ink layer is disposed on the contacting region and has a first side wall, and a first included angle defined between the first side wall and the surface being smaller than 90 degrees or larger than 90 degrees. The protective layer is disposed on the E-ink layer and has a second side wall, and a second included angle defined between the second side wall and the surface is smaller than 90 degrees or larger than 90 degrees. The sealant is disposed on the sealing region and surrounds the E-ink layer and the protective layer. A method for manufacturing the E-ink display device is also provided. | 12-08-2011 |
20120120364 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A display device includes a substrate, a backplane, a display medium layer, a protective layer, a driving component, a flexible printed circuit (FPC) and a sealant. The backplane and the display medium layer are disposed on the lower side and the upper side of the substrate, respectively. The protective layer covers the display medium layer and prevents moisture and oxygen from permeating into the display medium layer to deteriorate its performance. The sealant surrounds the first side surface of the substrate and the second side surface of the display medium layer, and wraps at least a portion of the driving component and a portion of the FPC. Additionally, a manufacturing method of a display device is also provided. | 05-17-2012 |
20140084291 | Active Device Array Substrate and Manufacturing Method Thereof - An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has at least one transistor region and at least one transparent region adjacent to each other. The gate electrode is disposed on the transistor region of the flexible substrate. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region of the flexible substrate has a second thickness. The second thickness is less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are disposed on opposite sides of the channel layer and are electrically connected to the channel layer. | 03-27-2014 |
20150028336 | Active Device Array Substrate - An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has a transistor region and a transparent region adjacent to each other. The gate electrode is disposed on the transistor region. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region has a second thickness less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are electrically connected to the channel layer. The pixel electrode is disposed on the dielectric layer which is disposed on the transparent region. The pixel electrode is electrically connected to the drain electrode. | 01-29-2015 |
20150062088 | OPTICAL TOUCH DEVICE AND METHOD OF FORMING PHOTO SENSOR - A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer. | 03-05-2015 |